A novel type of power picosecond semiconductor switches based on tunneling-assisted impact ionization fronts

P. Rodin, U. Ebert, W. Hundsdorfer, I.V. Grekhov

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Abstract

We propose a novel type of closing semiconductor switches based on a new physical mechanism - the propagation of a superfast tunneling-assisted impact ionization front. We present numerical simulations of the switching transients in the proposed devices. Our numerical results suggest that with the new mechanism, voltage pulses with a ramp up to 500 kV/ns and amplitude up to 8 kV can be formed. This sets new frontiers in pulse power electronics
Original languageEnglish
Title of host publicationProceedings of the 25th International Power Modulator Symposium, Hollywood, CA, 30 June 2002 through 3 July 2002
Pages445-448
Publication statusPublished - 2002
Event25th International Power Modulator Symposium and 19th High Voltage Workshop - Hollywood, United States
Duration: 30 Jun 20023 Jul 2002

Publication series

NameIEEE Conference Record of Power Modulator Symposium
Volume2002
ISSN (Print)1076-8467

Conference

Conference25th International Power Modulator Symposium and 19th High Voltage Workshop
CountryUnited States
CityHollywood
Period30/06/023/07/02
Other25th International Power Modulator Symposium and 2002 High Voltage Workshop

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    Rodin, P., Ebert, U., Hundsdorfer, W., & Grekhov, I. V. (2002). A novel type of power picosecond semiconductor switches based on tunneling-assisted impact ionization fronts. In Proceedings of the 25th International Power Modulator Symposium, Hollywood, CA, 30 June 2002 through 3 July 2002 (pp. 445-448). (IEEE Conference Record of Power Modulator Symposium; Vol. 2002).