Abstract
We propose a novel type of closing semiconductor switches based on a new physical mechanism - the propagation of a superfast tunneling-assisted impact ionization front. We present numerical simulations of the switching transients in the proposed devices. Our numerical results suggest that with the new mechanism, voltage pulses with a ramp up to 500 kV/ns and amplitude up to 8 kV can be formed. This sets new frontiers in pulse power electronics
| Original language | English |
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| Title of host publication | Proceedings of the 25th International Power Modulator Symposium, Hollywood, CA, 30 June 2002 through 3 July 2002 |
| Pages | 445-448 |
| Publication status | Published - 2002 |
| Event | 25th International Power Modulator Symposium and 19th High Voltage Workshop - Hollywood, United States Duration: 30 Jun 2002 → 3 Jul 2002 |
Conference
| Conference | 25th International Power Modulator Symposium and 19th High Voltage Workshop |
|---|---|
| Country/Territory | United States |
| City | Hollywood |
| Period | 30/06/02 → 3/07/02 |
| Other | 25th International Power Modulator Symposium and 2002 High Voltage Workshop |