In this paper we present a simulation strategy for the accurate prediction of the functionality of an InP based opto-electronic modulator. The device is composed by an InP-InGaAsP p-i-n diode embedded in a rib waveguide and a Mach-Zehnder interferometer. Finite Element Analysis for both semiconductor and optical equations solution is exploited. We present numerical results indicating that with a 2 mm-long device a reverse bias of 11 V is needed for a 180° phase shift.
|Name||Proceedings of SPIE|
|Conference||conference; ROMOPTO, 7th International Conference on Optics, Constanta, Romania; 2003-09-08; 2003-09-11|
|Period||8/09/03 → 11/09/03|
|Other||ROMOPTO, 7th International Conference on Optics, Constanta, Romania|