A novel optically wide-band electro-absorption modulator based on bandfilling in n-InGaAs

J.P. van Engelen; L. Shen; J.J.G.M. van der Tol; G.C. Roelkens; M.K. Smit

A novel optically wide-band electro-absorption modulator based on bandfilling in n-InGaAs

J.P. van Engelen, L. Shen, J.J.G.M. van der Tol, G.C. Roelkens, M.K. Smit

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

We propose a novel membrane electro-absorption modulator (EAM) integrated on silicon. The device is based on the carrier-concentration dependent absorption of highly-doped n-InGaAs. The modulator is predicted to be wide-band and to provide an extinction ratio (ER) of 7.5 dB, an insertion loss (IL) of 1.1 dB, a modulation speed above 10 Gbit/s and a power consumption of 80 fJ/bit. The modulator has a small footprint of 10 x 120 μm² and operates with a 1.5 V voltage swing.

Original language	English
Title of host publication	Proceedings of the 18th European Conference on Integrated Optics (ECIO 2016), 18-21 May 2016, Warsaw, Poland
Publication status	Published - 18 May 2016
Event	18th European Conference on Integrated Optics (ECIO 2016) - Warsaw University of Technology, Warsaw, Poland Duration: 18 May 2016 → 20 May 2016 Conference number: 18 http://ecio2016.imio.pw.edu.pl/

Conference

Conference	18th European Conference on Integrated Optics (ECIO 2016)
Abbreviated title	ECIO 2016
Country	Poland
City	Warsaw
Period	18/05/16 → 20/05/16
Internet address	http://ecio2016.imio.pw.edu.pl/

Keywords

electro-absorption modulator
InGaAs
bandfilling
membrane
silicon
indium phosphide

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@inproceedings{16746e81c390483b9696785cb2223369,

title = "A novel optically wide-band electro-absorption modulator based on bandfilling in n-InGaAs",

abstract = "We propose a novel membrane electro-absorption modulator (EAM) integrated on silicon. The device is based on the carrier-concentration dependent absorption of highly-doped n-InGaAs. The modulator is predicted to be wide-band and to provide an extinction ratio (ER) of 7.5 dB, an insertion loss (IL) of 1.1 dB, a modulation speed above 10 Gbit/s and a power consumption of 80 fJ/bit. The modulator has a small footprint of 10 x 120 μm² and operates with a 1.5 V voltage swing.",

keywords = "electro-absorption modulator, InGaAs, bandfilling, membrane, silicon, indium phosphide",

author = "{van Engelen}, J.P. and L. Shen and {van der Tol}, J.J.G.M. and G.C. Roelkens and M.K. Smit",

year = "2016",

month = may,

day = "18",

language = "English",

booktitle = "Proceedings of the 18th European Conference on Integrated Optics (ECIO 2016), 18-21 May 2016, Warsaw, Poland",

note = "18th European Conference on Integrated Optics (ECIO 2016), ECIO 2016 ; Conference date: 18-05-2016 Through 20-05-2016",

url = "http://ecio2016.imio.pw.edu.pl/",

}

A novel optically wide-band electro-absorption modulator based on bandfilling in n-InGaAs. / van Engelen, J.P.; Shen, L.; van der Tol, J.J.G.M.; Roelkens, G.C.; Smit, M.K.

Proceedings of the 18th European Conference on Integrated Optics (ECIO 2016), 18-21 May 2016, Warsaw, Poland. 2016.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - A novel optically wide-band electro-absorption modulator based on bandfilling in n-InGaAs

AU - van Engelen, J.P.

AU - Shen, L.

AU - van der Tol, J.J.G.M.

AU - Roelkens, G.C.

AU - Smit, M.K.

N1 - Conference code: 18

PY - 2016/5/18

Y1 - 2016/5/18

N2 - We propose a novel membrane electro-absorption modulator (EAM) integrated on silicon. The device is based on the carrier-concentration dependent absorption of highly-doped n-InGaAs. The modulator is predicted to be wide-band and to provide an extinction ratio (ER) of 7.5 dB, an insertion loss (IL) of 1.1 dB, a modulation speed above 10 Gbit/s and a power consumption of 80 fJ/bit. The modulator has a small footprint of 10 x 120 μm² and operates with a 1.5 V voltage swing.

AB - We propose a novel membrane electro-absorption modulator (EAM) integrated on silicon. The device is based on the carrier-concentration dependent absorption of highly-doped n-InGaAs. The modulator is predicted to be wide-band and to provide an extinction ratio (ER) of 7.5 dB, an insertion loss (IL) of 1.1 dB, a modulation speed above 10 Gbit/s and a power consumption of 80 fJ/bit. The modulator has a small footprint of 10 x 120 μm² and operates with a 1.5 V voltage swing.

KW - electro-absorption modulator

KW - InGaAs

KW - bandfilling

KW - membrane

KW - silicon

KW - indium phosphide

M3 - Conference contribution

BT - Proceedings of the 18th European Conference on Integrated Optics (ECIO 2016), 18-21 May 2016, Warsaw, Poland

T2 - 18th European Conference on Integrated Optics (ECIO 2016)

Y2 - 18 May 2016 through 20 May 2016

ER -