Abstract
We propose a novel membrane electro-absorption modulator (EAM) integrated on silicon. The device is based on the carrier-concentration dependent absorption of highly-doped n-InGaAs. The modulator is predicted to be wide-band and to provide an extinction ratio (ER) of 7.5 dB, an insertion loss (IL) of 1.1 dB, a modulation speed above 10 Gbit/s and a power consumption of 80 fJ/bit. The modulator has a small footprint of 10 x 120 μm² and operates with a 1.5 V voltage swing.
| Original language | English |
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| Title of host publication | Proceedings of the 18th European Conference on Integrated Optics (ECIO 2016), 18-21 May 2016, Warsaw, Poland |
| Publication status | Published - 18 May 2016 |
| Event | 18th European Conference on Integrated Optics (ECIO 2016) - Warsaw University of Technology, Warsaw, Poland Duration: 18 May 2016 → 20 May 2016 Conference number: 18 http://ecio2016.imio.pw.edu.pl/ |
Conference
| Conference | 18th European Conference on Integrated Optics (ECIO 2016) |
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| Abbreviated title | ECIO 2016 |
| Country | Poland |
| City | Warsaw |
| Period | 18/05/16 → 20/05/16 |
| Internet address |
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Keywords
- electro-absorption modulator
- InGaAs
- bandfilling
- membrane
- silicon
- indium phosphide
Cite this
van Engelen, J. P., Shen, L., van der Tol, J. J. G. M., Roelkens, G. C., & Smit, M. K. (2016). A novel optically wide-band electro-absorption modulator based on bandfilling in n-InGaAs. In Proceedings of the 18th European Conference on Integrated Optics (ECIO 2016), 18-21 May 2016, Warsaw, Poland