A novel optically wide-band electro-absorption modulator based on bandfilling in n-InGaAs

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Abstract

We propose a novel membrane electro-absorption modulator (EAM) integrated on silicon. The device is based on the carrier-concentration dependent absorption of highly-doped n-InGaAs. The modulator is predicted to be wide-band and to provide an extinction ratio (ER) of 7.5 dB, an insertion loss (IL) of 1.1 dB, a modulation speed above 10 Gbit/s and a power consumption of 80 fJ/bit. The modulator has a small footprint of 10 x 120 μm² and operates with a 1.5 V voltage swing.
Original languageEnglish
Title of host publicationProceedings of the 18th European Conference on Integrated Optics (ECIO 2016), 18-21 May 2016, Warsaw, Poland
Publication statusPublished - 18 May 2016
Event18th European Conference on Integrated Optics (ECIO 2016) - Warsaw University of Technology, Warsaw, Poland
Duration: 18 May 201620 May 2016
Conference number: 18
http://ecio2016.imio.pw.edu.pl/

Conference

Conference18th European Conference on Integrated Optics (ECIO 2016)
Abbreviated titleECIO 2016
CountryPoland
CityWarsaw
Period18/05/1620/05/16
Internet address

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Keywords

  • electro-absorption modulator
  • InGaAs
  • bandfilling
  • membrane
  • silicon
  • indium phosphide

Cite this

van Engelen, J. P., Shen, L., van der Tol, J. J. G. M., Roelkens, G. C., & Smit, M. K. (2016). A novel optically wide-band electro-absorption modulator based on bandfilling in n-InGaAs. In Proceedings of the 18th European Conference on Integrated Optics (ECIO 2016), 18-21 May 2016, Warsaw, Poland