A novel high-density low-cost diode programmable read only memory

C. de Graaf; P. H. Woerlee; C. M. Hart; H. Lifka; P. W.H. de Vreede; P. J.M. Janssen; F. J. Sluijs; G. M. Paulzen

doi:10.1109/IEDM.1996.553151

A novel high-density low-cost diode programmable read only memory

C. de Graaf
, P. H. Woerlee
, C. M. Hart
, H. Lifka
, P. W.H. de Vreede
, P. J.M. Janssen
, F. J. Sluijs
, G. M. Paulzen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

11 Citations (Scopus)

Abstract

A new stand-alone Diode Programmable Read Only Memory (DPROM) technology for one-time-programmable memories is presented. The technology features small cell size and low mask count. The memory function is based on the formation of a diode-antifuse by gate oxide breakdown. The functionality of DPROM Digital is demonstrated and the program, read and reliability characteristics are discussed.

Original language	English
Title of host publication	1996 IEEE International Electron Devices Meeting
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	189-192
Number of pages	4
ISBN (Print)	0-7803-3393-4
DOIs	https://doi.org/10.1109/IEDM.1996.553151
Publication status	Published - 1 Dec 1996
Externally published	Yes
Event	1996 IEEE International Electron Devices Meeting, IEDM 1996 - San Francisco, United States Duration: 8 Dec 1996 → 11 Dec 1996

Conference

Conference	1996 IEEE International Electron Devices Meeting, IEDM 1996
Country/Territory	United States
City	San Francisco
Period	8/12/96 → 11/12/96

Access to Document

10.1109/IEDM.1996.553151

Cite this

@inproceedings{523b973adde345f1bc6876ac4697af04,

title = "A novel high-density low-cost diode programmable read only memory",

abstract = "A new stand-alone Diode Programmable Read Only Memory (DPROM) technology for one-time-programmable memories is presented. The technology features small cell size and low mask count. The memory function is based on the formation of a diode-antifuse by gate oxide breakdown. The functionality of DPROM Digital is demonstrated and the program, read and reliability characteristics are discussed.",

author = "\{de Graaf\}, C. and Woerlee, \{P. H.\} and Hart, \{C. M.\} and H. Lifka and \{de Vreede\}, \{P. W.H.\} and Janssen, \{P. J.M.\} and Sluijs, \{F. J.\} and Paulzen, \{G. M.\}",

year = "1996",

month = dec,

day = "1",

doi = "10.1109/IEDM.1996.553151",

language = "English",

isbn = "0-7803-3393-4",

pages = "189--192",

booktitle = "1996 IEEE International Electron Devices Meeting",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "1996 IEEE International Electron Devices Meeting, IEDM 1996 ; Conference date: 08-12-1996 Through 11-12-1996",

}

de Graaf, C, Woerlee, PH, Hart, CM, Lifka, H, de Vreede, PWH, Janssen, PJM, Sluijs, FJ & Paulzen, GM 1996, A novel high-density low-cost diode programmable read only memory. in 1996 IEEE International Electron Devices Meeting. Institute of Electrical and Electronics Engineers, Piscataway, pp. 189-192, 1996 IEEE International Electron Devices Meeting, IEDM 1996, San Francisco, California, United States, 8/12/96. https://doi.org/10.1109/IEDM.1996.553151

TY - GEN

T1 - A novel high-density low-cost diode programmable read only memory

AU - de Graaf, C.

AU - Woerlee, P. H.

AU - Hart, C. M.

AU - Lifka, H.

AU - de Vreede, P. W.H.

AU - Janssen, P. J.M.

AU - Sluijs, F. J.

AU - Paulzen, G. M.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - A new stand-alone Diode Programmable Read Only Memory (DPROM) technology for one-time-programmable memories is presented. The technology features small cell size and low mask count. The memory function is based on the formation of a diode-antifuse by gate oxide breakdown. The functionality of DPROM Digital is demonstrated and the program, read and reliability characteristics are discussed.

AB - A new stand-alone Diode Programmable Read Only Memory (DPROM) technology for one-time-programmable memories is presented. The technology features small cell size and low mask count. The memory function is based on the formation of a diode-antifuse by gate oxide breakdown. The functionality of DPROM Digital is demonstrated and the program, read and reliability characteristics are discussed.

UR - https://www.scopus.com/pages/publications/0030413571

U2 - 10.1109/IEDM.1996.553151

DO - 10.1109/IEDM.1996.553151

M3 - Conference contribution

AN - SCOPUS:0030413571

SN - 0-7803-3393-4

SP - 189

EP - 192

BT - 1996 IEEE International Electron Devices Meeting

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 1996 IEEE International Electron Devices Meeting, IEDM 1996

Y2 - 8 December 1996 through 11 December 1996

ER -

A novel high-density low-cost diode programmable read only memory

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