A novel high-density low-cost diode programmable read only memory

C. de Graaf; P. H. Woerlee; C. M. Hart; H. Lifka; P. W.H. de Vreede; P. J.M. Janssen; F. J. Sluijs; G. M. Paulzen

doi:10.1109/IEDM.1996.553151

A novel high-density low-cost diode programmable read only memory

C. de Graaf, P. H. Woerlee, C. M. Hart, H. Lifka, P. W.H. de Vreede, P. J.M. Janssen, F. J. Sluijs, G. M. Paulzen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

11 Citations (Scopus)

Abstract

A new stand-alone Diode Programmable Read Only Memory (DPROM) technology for one-time-programmable memories is presented. The technology features small cell size and low mask count. The memory function is based on the formation of a diode-antifuse by gate oxide breakdown. The functionality of DPROM Digital is demonstrated and the program, read and reliability characteristics are discussed.

Original language	English
Title of host publication	1996 IEEE International Electron Devices Meeting
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	189-192
Number of pages	4
ISBN (Print)	0-7803-3393-4
DOIs	https://doi.org/10.1109/IEDM.1996.553151
Publication status	Published - 1 Dec 1996
Externally published	Yes
Event	1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 8 Dec 1996 → 11 Dec 1996

Conference

Conference	1996 IEEE International Electron Devices Meeting
City	San Francisco, CA, USA
Period	8/12/96 → 11/12/96

Access to Document

10.1109/IEDM.1996.553151

Link to publication in Scopus

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Cite this

de Graaf, C., Woerlee, P. H., Hart, C. M., Lifka, H., de Vreede, P. W. H., Janssen, P. J. M., Sluijs, F. J., & Paulzen, G. M. (1996). A novel high-density low-cost diode programmable read only memory. In 1996 IEEE International Electron Devices Meeting (pp. 189-192). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/IEDM.1996.553151

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title = "A novel high-density low-cost diode programmable read only memory",

abstract = "A new stand-alone Diode Programmable Read Only Memory (DPROM) technology for one-time-programmable memories is presented. The technology features small cell size and low mask count. The memory function is based on the formation of a diode-antifuse by gate oxide breakdown. The functionality of DPROM Digital is demonstrated and the program, read and reliability characteristics are discussed.",

author = "{de Graaf}, C. and Woerlee, {P. H.} and Hart, {C. M.} and H. Lifka and {de Vreede}, {P. W.H.} and Janssen, {P. J.M.} and Sluijs, {F. J.} and Paulzen, {G. M.}",

year = "1996",

month = dec,

day = "1",

doi = "10.1109/IEDM.1996.553151",

language = "English",

isbn = "0-7803-3393-4",

pages = "189--192",

booktitle = "1996 IEEE International Electron Devices Meeting",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "1996 IEEE International Electron Devices Meeting ; Conference date: 08-12-1996 Through 11-12-1996",

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de Graaf, C, Woerlee, PH, Hart, CM, Lifka, H, de Vreede, PWH, Janssen, PJM, Sluijs, FJ & Paulzen, GM 1996, A novel high-density low-cost diode programmable read only memory. in 1996 IEEE International Electron Devices Meeting. Institute of Electrical and Electronics Engineers, Piscataway, pp. 189-192, 1996 IEEE International Electron Devices Meeting, San Francisco, CA, USA, 8/12/96. https://doi.org/10.1109/IEDM.1996.553151

A novel high-density low-cost diode programmable read only memory. / de Graaf, C.; Woerlee, P. H.; Hart, C. M.; Lifka, H.; de Vreede, P. W.H.; Janssen, P. J.M.; Sluijs, F. J.; Paulzen, G. M.

1996 IEEE International Electron Devices Meeting. Piscataway : Institute of Electrical and Electronics Engineers, 1996. p. 189-192.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Woerlee, P. H.

AU - Hart, C. M.

AU - Lifka, H.

AU - de Vreede, P. W.H.

AU - Janssen, P. J.M.

AU - Sluijs, F. J.

AU - Paulzen, G. M.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - A new stand-alone Diode Programmable Read Only Memory (DPROM) technology for one-time-programmable memories is presented. The technology features small cell size and low mask count. The memory function is based on the formation of a diode-antifuse by gate oxide breakdown. The functionality of DPROM Digital is demonstrated and the program, read and reliability characteristics are discussed.

AB - A new stand-alone Diode Programmable Read Only Memory (DPROM) technology for one-time-programmable memories is presented. The technology features small cell size and low mask count. The memory function is based on the formation of a diode-antifuse by gate oxide breakdown. The functionality of DPROM Digital is demonstrated and the program, read and reliability characteristics are discussed.

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BT - 1996 IEEE International Electron Devices Meeting

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