A novel high-density low-cost diode programmable read only memory

C. de Graaf, P. H. Woerlee, C. M. Hart, H. Lifka, P. W.H. de Vreede, P. J.M. Janssen, F. J. Sluijs, G. M. Paulzen

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

11 Citations (Scopus)

Abstract

A new stand-alone Diode Programmable Read Only Memory (DPROM) technology for one-time-programmable memories is presented. The technology features small cell size and low mask count. The memory function is based on the formation of a diode-antifuse by gate oxide breakdown. The functionality of DPROM Digital is demonstrated and the program, read and reliability characteristics are discussed.

Original languageEnglish
Title of host publication1996 IEEE International Electron Devices Meeting
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages189-192
Number of pages4
ISBN (Print)0-7803-3393-4
DOIs
Publication statusPublished - 1 Dec 1996
Externally publishedYes
Event1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 8 Dec 199611 Dec 1996

Conference

Conference1996 IEEE International Electron Devices Meeting
CitySan Francisco, CA, USA
Period8/12/9611/12/96

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    de Graaf, C., Woerlee, P. H., Hart, C. M., Lifka, H., de Vreede, P. W. H., Janssen, P. J. M., Sluijs, F. J., & Paulzen, G. M. (1996). A novel high-density low-cost diode programmable read only memory. In 1996 IEEE International Electron Devices Meeting (pp. 189-192). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/IEDM.1996.553151