Abstract
A new stand-alone Diode Programmable Read Only Memory (DPROM) technology for one-time-programmable memories is presented. The technology features small cell size and low mask count. The memory function is based on the formation of a diode-antifuse by gate oxide breakdown. The functionality of DPROM Digital is demonstrated and the program, read and reliability characteristics are discussed.
Original language | English |
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Title of host publication | 1996 IEEE International Electron Devices Meeting |
Place of Publication | Piscataway |
Publisher | Institute of Electrical and Electronics Engineers |
Pages | 189-192 |
Number of pages | 4 |
ISBN (Print) | 0-7803-3393-4 |
DOIs | |
Publication status | Published - 1 Dec 1996 |
Externally published | Yes |
Event | 1996 IEEE International Electron Devices Meeting, IEDM 1996 - San Francisco, United States Duration: 8 Dec 1996 → 11 Dec 1996 |
Conference
Conference | 1996 IEEE International Electron Devices Meeting, IEDM 1996 |
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Country/Territory | United States |
City | San Francisco |
Period | 8/12/96 → 11/12/96 |