A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations

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Abstract

We propose and evaluate by simulation a novel membrane electro-absorption modulator heterogeneously integrated on silicon. The device is based on the electron-concentration dependent absorption of highly doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gb/s, and a power consumption of 53 fJ/b. The modulator has a small footprint of 0.4 × 80 µm² (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing.
LanguageEnglish
Article number3300108
Number of pages8
JournalIEEE Journal of Selected Topics in Quantum Electronics
Volume24
Issue number1
Early online date23 Oct 2017
DOIs
StatePublished - 2018

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Modulators
modulators
broadband
simulation
footprints
Insertion losses
insertion loss
CMOS
extinction
Electric power utilization
Modulation
membranes
Membranes
modulation
Silicon
Wavelength
Electrons
Electric potential
electric potential
silicon

Cite this

@article{28c48aba830b44978968e49712c3181e,
title = "A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations",
abstract = "We propose and evaluate by simulation a novel membrane electro-absorption modulator heterogeneously integrated on silicon. The device is based on the electron-concentration dependent absorption of highly doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gb/s, and a power consumption of 53 fJ/b. The modulator has a small footprint of 0.4 × 80 µm² (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing.",
author = "{van Engelen}, J.P. and L. Shen and G.C. Roelkens and Y. Jiao and M.K. Smit and {van der Tol}, J.J.G.M.",
year = "2018",
doi = "10.1109/JSTQE.2017.2765459",
language = "English",
volume = "24",
journal = "IEEE Journal of Selected Topics in Quantum Electronics",
issn = "1077-260X",
publisher = "Institute of Electrical and Electronics Engineers",
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TY - JOUR

T1 - A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations

AU - van Engelen,J.P.

AU - Shen,L.

AU - Roelkens,G.C.

AU - Jiao,Y.

AU - Smit,M.K.

AU - van der Tol,J.J.G.M.

PY - 2018

Y1 - 2018

N2 - We propose and evaluate by simulation a novel membrane electro-absorption modulator heterogeneously integrated on silicon. The device is based on the electron-concentration dependent absorption of highly doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gb/s, and a power consumption of 53 fJ/b. The modulator has a small footprint of 0.4 × 80 µm² (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing.

AB - We propose and evaluate by simulation a novel membrane electro-absorption modulator heterogeneously integrated on silicon. The device is based on the electron-concentration dependent absorption of highly doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gb/s, and a power consumption of 53 fJ/b. The modulator has a small footprint of 0.4 × 80 µm² (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing.

U2 - 10.1109/JSTQE.2017.2765459

DO - 10.1109/JSTQE.2017.2765459

M3 - Article

VL - 24

JO - IEEE Journal of Selected Topics in Quantum Electronics

T2 - IEEE Journal of Selected Topics in Quantum Electronics

JF - IEEE Journal of Selected Topics in Quantum Electronics

SN - 1077-260X

IS - 1

M1 - 3300108

ER -