A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations

Research output: Contribution to journalArticleAcademicpeer-review

4 Citations (Scopus)
192 Downloads (Pure)

Abstract

We propose and evaluate by simulation a novel membrane electro-Absorption modulator heterogeneously integrated on silicon. The device is based on the electron-concentration-dependent absorption of highly doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gb/s, and a power consumption of 53 fJ/b. The modulator has a small footprint of 0.4 × 80 um 2 (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing.

Original languageEnglish
Article number3300108
Number of pages8
JournalIEEE Journal of Selected Topics in Quantum Electronics
Volume24
Issue number1
Early online date23 Oct 2017
DOIs
Publication statusPublished - 2018

Keywords

  • Burstein-Moss
  • Electro-Absorption modulator
  • InGaAs
  • Indium phosphide membrane
  • Integrated photonics
  • Silicon
  • bandfilling

Fingerprint Dive into the research topics of 'A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations'. Together they form a unique fingerprint.

Cite this