We propose and evaluate by simulation a novel membrane electro-Absorption modulator heterogeneously integrated on silicon. The device is based on the electron-concentration-dependent absorption of highly doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gb/s, and a power consumption of 53 fJ/b. The modulator has a small footprint of 0.4 × 80 um 2 (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing.
|Number of pages||8|
|Journal||IEEE Journal of Selected Topics in Quantum Electronics|
|Early online date||23 Oct 2017|
|Publication status||Published - 2018|
- Electro-Absorption modulator
- Indium phosphide membrane
- Integrated photonics