A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations

J.P. van Engelen, L. Shen, G.C. Roelkens, Y. Jiao, M.K. Smit, J.J.G.M. van der Tol

Research output: Contribution to journal › Article › Academic › peer-review

3 Citations (Scopus)

Abstract

We propose and evaluate by simulation a novel membrane electro-absorption modulator heterogeneously integrated on silicon. The device is based on the electron-concentration dependent absorption of highly doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gb/s, and a power consumption of 53 fJ/b. The modulator has a small footprint of 0.4 × 80 µm² (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing.
LanguageEnglish
Article number3300108
Number of pages8
JournalIEEE Journal of Selected Topics in Quantum Electronics
Volume24
Issue number1
Early online date23 Oct 2017
DOIs
StatePublished - 2018

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Modulators
modulators
broadband
simulation
footprints
Insertion losses
insertion loss
CMOS
extinction
Electric power utilization
Modulation
membranes
Membranes
modulation
Silicon
Wavelength
Electrons
Electric potential
electric potential
silicon

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van Engelen, J.P. ; Shen, L. ; Roelkens, G.C. ; Jiao, Y. ; Smit, M.K. ; van der Tol, J.J.G.M./ A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations. In: IEEE Journal of Selected Topics in Quantum Electronics. 2018 ; Vol. 24, No. 1.
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abstract = "We propose and evaluate by simulation a novel membrane electro-absorption modulator heterogeneously integrated on silicon. The device is based on the electron-concentration dependent absorption of highly doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gb/s, and a power consumption of 53 fJ/b. The modulator has a small footprint of 0.4 × 80 µm² (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing.",
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van Engelen, JP, Shen, L, Roelkens, GC, Jiao, Y, Smit, MK & van der Tol, JJGM 2018, 'A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations' IEEE Journal of Selected Topics in Quantum Electronics, vol. 24, no. 1, 3300108. DOI: 10.1109/JSTQE.2017.2765459

A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations. / van Engelen, J.P.; Shen, L.; Roelkens, G.C.; Jiao, Y.; Smit, M.K.; van der Tol, J.J.G.M.

In: IEEE Journal of Selected Topics in Quantum Electronics, Vol. 24, No. 1, 3300108, 2018.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations

AU - van Engelen,J.P.

AU - Shen,L.

AU - Roelkens,G.C.

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AU - Smit,M.K.

AU - van der Tol,J.J.G.M.

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N2 - We propose and evaluate by simulation a novel membrane electro-absorption modulator heterogeneously integrated on silicon. The device is based on the electron-concentration dependent absorption of highly doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gb/s, and a power consumption of 53 fJ/b. The modulator has a small footprint of 0.4 × 80 µm² (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing.

AB - We propose and evaluate by simulation a novel membrane electro-absorption modulator heterogeneously integrated on silicon. The device is based on the electron-concentration dependent absorption of highly doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gb/s, and a power consumption of 53 fJ/b. The modulator has a small footprint of 0.4 × 80 µm² (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing.

U2 - 10.1109/JSTQE.2017.2765459

DO - 10.1109/JSTQE.2017.2765459

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JF - IEEE Journal of Selected Topics in Quantum Electronics

SN - 1077-260X

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van Engelen JP, Shen L, Roelkens GC, Jiao Y, Smit MK, van der Tol JJGM. A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations. IEEE Journal of Selected Topics in Quantum Electronics. 2018;24(1). 3300108. Available from, DOI: 10.1109/JSTQE.2017.2765459

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