A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations

J.P. van Engelen; L. Shen; G.C. Roelkens; Y. Jiao; M.K. Smit; J.J.G.M. van der Tol

doi:10.1109/JSTQE.2017.2765459

A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations

J.P. van Engelen, L. Shen, G.C. Roelkens, Y. Jiao, M.K. Smit, J.J.G.M. van der Tol

Photonic Integration

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Abstract

We propose and evaluate by simulation a novel membrane electro-Absorption modulator heterogeneously integrated on silicon. The device is based on the electron-concentration-dependent absorption of highly doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gb/s, and a power consumption of 53 fJ/b. The modulator has a small footprint of 0.4 × 80 um ² (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing.

Original language	English
Article number	3300108
Number of pages	8
Journal	IEEE Journal of Selected Topics in Quantum Electronics
Volume	24
Issue number	1
Early online date	23 Oct 2017
DOIs	https://doi.org/10.1109/JSTQE.2017.2765459
Publication status	Published - 2018

Keywords

Burstein-Moss
Electro-Absorption modulator
InGaAs
Indium phosphide membrane
Integrated photonics
Silicon
bandfilling

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10.1109/JSTQE.2017.2765459

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title = "A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations",

abstract = "We propose and evaluate by simulation a novel membrane electro-Absorption modulator heterogeneously integrated on silicon. The device is based on the electron-concentration-dependent absorption of highly doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gb/s, and a power consumption of 53 fJ/b. The modulator has a small footprint of 0.4 × 80 um 2 (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing. ",

keywords = "Burstein-Moss, Electro-Absorption modulator, InGaAs, Indium phosphide membrane, Integrated photonics, Silicon, bandfilling",

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AU - Smit, M.K.

AU - van der Tol, J.J.G.M.

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AB - We propose and evaluate by simulation a novel membrane electro-Absorption modulator heterogeneously integrated on silicon. The device is based on the electron-concentration-dependent absorption of highly doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gb/s, and a power consumption of 53 fJ/b. The modulator has a small footprint of 0.4 × 80 um 2 (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing.

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A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations

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Keywords

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