Abstract
We propose and evaluate by simulation a novel membrane electro-Absorption modulator heterogeneously integrated on silicon. The device is based on the electron-concentration-dependent absorption of highly doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gb/s, and a power consumption of 53 fJ/b. The modulator has a small footprint of 0.4 × 80 um 2 (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing.
Original language | English |
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Article number | 3300108 |
Number of pages | 8 |
Journal | IEEE Journal of Selected Topics in Quantum Electronics |
Volume | 24 |
Issue number | 1 |
Early online date | 23 Oct 2017 |
DOIs | |
Publication status | Published - 2018 |
Keywords
- Burstein-Moss
- Electro-Absorption modulator
- InGaAs
- Indium phosphide membrane
- Integrated photonics
- Silicon
- bandfilling