Abstract
| Original language | English |
|---|---|
| Article number | 3300108 |
| Number of pages | 8 |
| Journal | IEEE Journal of Selected Topics in Quantum Electronics |
| Volume | 24 |
| Issue number | 1 |
| Early online date | 23 Oct 2017 |
| DOIs | |
| Publication status | Published - 2018 |
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A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations. / van Engelen, J.P.; Shen, L.; Roelkens, G.C.; Jiao, Y.; Smit, M.K.; van der Tol, J.J.G.M.
In: IEEE Journal of Selected Topics in Quantum Electronics, Vol. 24, No. 1, 3300108, 2018.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations
AU - van Engelen, J.P.
AU - Shen, L.
AU - Roelkens, G.C.
AU - Jiao, Y.
AU - Smit, M.K.
AU - van der Tol, J.J.G.M.
PY - 2018
Y1 - 2018
N2 - We propose and evaluate by simulation a novel membrane electro-absorption modulator heterogeneously integrated on silicon. The device is based on the electron-concentration dependent absorption of highly doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gb/s, and a power consumption of 53 fJ/b. The modulator has a small footprint of 0.4 × 80 µm² (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing.
AB - We propose and evaluate by simulation a novel membrane electro-absorption modulator heterogeneously integrated on silicon. The device is based on the electron-concentration dependent absorption of highly doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gb/s, and a power consumption of 53 fJ/b. The modulator has a small footprint of 0.4 × 80 µm² (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing.
U2 - 10.1109/JSTQE.2017.2765459
DO - 10.1109/JSTQE.2017.2765459
M3 - Article
VL - 24
JO - IEEE Journal of Selected Topics in Quantum Electronics
JF - IEEE Journal of Selected Topics in Quantum Electronics
SN - 1077-260X
IS - 1
M1 - 3300108
ER -