A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations

J.P. van Engelen; L. Shen; G.C. Roelkens; Y. Jiao; M.K. Smit; J.J.G.M. van der Tol

doi:10.1109/JSTQE.2017.2765459

A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations

J.P. van Engelen, L. Shen, G.C. Roelkens, Y. Jiao, M.K. Smit, J.J.G.M. van der Tol

Photonic Integration

Research output: Contribution to journal › Article › Academic › peer-review

4 Citations (Scopus)

192 Downloads (Pure)

Abstract

We propose and evaluate by simulation a novel membrane electro-Absorption modulator heterogeneously integrated on silicon. The device is based on the electron-concentration-dependent absorption of highly doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gb/s, and a power consumption of 53 fJ/b. The modulator has a small footprint of 0.4 × 80 um ² (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing.

Original language	English
Article number	3300108
Number of pages	8
Journal	IEEE Journal of Selected Topics in Quantum Electronics
Volume	24
Issue number	1
Early online date	23 Oct 2017
DOIs	https://doi.org/10.1109/JSTQE.2017.2765459
Publication status	Published - 2018

Keywords

Burstein-Moss
Electro-Absorption modulator
InGaAs
Indium phosphide membrane
Integrated photonics
Silicon
bandfilling

Access to Document

10.1109/JSTQE.2017.2765459

author versionFinal author version , 3.09 MB

Link to publication in Scopus

Fingerprint Dive into the research topics of 'A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations'. Together they form a unique fingerprint.

Cite this

@article{28c48aba830b44978968e49712c3181e,

title = "A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations",

abstract = "We propose and evaluate by simulation a novel membrane electro-Absorption modulator heterogeneously integrated on silicon. The device is based on the electron-concentration-dependent absorption of highly doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gb/s, and a power consumption of 53 fJ/b. The modulator has a small footprint of 0.4 × 80 um 2 (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing. ",

keywords = "Burstein-Moss, Electro-Absorption modulator, InGaAs, Indium phosphide membrane, Integrated photonics, Silicon, bandfilling",

author = "{van Engelen}, J.P. and L. Shen and G.C. Roelkens and Y. Jiao and M.K. Smit and {van der Tol}, J.J.G.M.",

year = "2018",

doi = "10.1109/JSTQE.2017.2765459",

language = "English",

volume = "24",

journal = "IEEE Journal of Selected Topics in Quantum Electronics",

issn = "1077-260X",

publisher = "Institute of Electrical and Electronics Engineers",

number = "1",

}

TY - JOUR

T1 - A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations

AU - van Engelen, J.P.

AU - Shen, L.

AU - Roelkens, G.C.

AU - Jiao, Y.

AU - Smit, M.K.

AU - van der Tol, J.J.G.M.

PY - 2018

Y1 - 2018

N2 - We propose and evaluate by simulation a novel membrane electro-Absorption modulator heterogeneously integrated on silicon. The device is based on the electron-concentration-dependent absorption of highly doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gb/s, and a power consumption of 53 fJ/b. The modulator has a small footprint of 0.4 × 80 um 2 (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing.

AB - We propose and evaluate by simulation a novel membrane electro-Absorption modulator heterogeneously integrated on silicon. The device is based on the electron-concentration-dependent absorption of highly doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gb/s, and a power consumption of 53 fJ/b. The modulator has a small footprint of 0.4 × 80 um 2 (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing.

KW - Burstein-Moss

KW - Electro-Absorption modulator

KW - InGaAs

KW - Indium phosphide membrane

KW - Integrated photonics

KW - Silicon

KW - bandfilling

UR - http://www.scopus.com/inward/record.url?scp=85032696086&partnerID=8YFLogxK

U2 - 10.1109/JSTQE.2017.2765459

DO - 10.1109/JSTQE.2017.2765459

M3 - Article

VL - 24

JO - IEEE Journal of Selected Topics in Quantum Electronics

JF - IEEE Journal of Selected Topics in Quantum Electronics

SN - 1077-260X

IS - 1

M1 - 3300108

ER -