A new concept for spatially divided Deep Reactive Ion Etching with ALD-based passivation

F. Roozeboom, B.J. Kniknie, A.M. Lankhorst, G.J.J. Winands, R. Knaapen, M. Smets, P. Poodt, G. Dingemans, W. Keuning, W.M.M. Kessels

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

8 Citations (Scopus)
201 Downloads (Pure)

Abstract

Conventional Deep Reactive Ion Etching (DRIE) is a plasma etch process with alternating half-cycles of 1) Si-etching with SF6 to form gaseous SiFx etch products, and 2) passivation with C4F8 that polymerizes as a protecting fluorocarbon deposit on the sidewalls and bottom of the etched features. In this work we report on a novel alternative and disruptive technology concept of Spatiallydivided Deep Reactive Ion Etching, S-DRIE, where the process is converted from the time-divided into the spatially divided regime. The spatial division can be accomplished by inert gas bearing ‘curtains’ of heights down to 20 µm. These curtains confine the reactive gases to individual (often linear) injection slots constructed in a gas injector head. By horizontally moving the substrate back and forth under the head one can realize the alternate exposures to the overall cycle. A second improvement in the spatially divided approach is the replacement of the CVD-based C4F8 passivation steps by ALD-based oxide (e.g. SiO2) deposition cycles. The method can have industrial potential in cost-effective creation of advanced 3D interconnects (TSVs), MEMS manufacturing and advanced patterning, e.g., in nanoscale transistor line edge roughness using Atomic Layer Etching.
Original languageEnglish
Title of host publicationProceedings of the E-MRS 2012 Spring meeting, symposium M : more than Moore : novel materials approaches for functionalised silicon based microelectronics, 14-18 May 2012, Strassbourg, France
PublisherInstitute of Physics
Pages012001-
DOIs
Publication statusPublished - 2012
Event2012 More than Moore: Novel Materials Approaches for Functionalised Silicon Based Microelectronics Symposium - Strassbourg, France
Duration: 14 May 201218 May 2012

Publication series

NameIOP Conference Series: Material Science and Engineering
Volume41
ISSN (Print)1757-8981

Conference

Conference2012 More than Moore: Novel Materials Approaches for Functionalised Silicon Based Microelectronics Symposium
CountryFrance
CityStrassbourg
Period14/05/1218/05/12
OtherSymposium held at the E-MRS 2012 Spring Meeting

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