A new concept for a monolithically integrated optoelectronic receiver based on a GaAs-PIN-photodiode and a PJBT

F. Dillmann, M. Marso, H. Hardtdegen, M. Loeken, P. Kordos, H. Lueth, A. Brennemann, F.J. Tegude, J.J.M. Kwaspen, L.M.F. Kaufmann

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Original languageEnglish
Title of host publicationProc. Second International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM '98
EditorsJ. Brenza, D. Donoval, V. Drobny, F. Uherek
Pages291-294
Publication statusPublished - 1998
Eventconference; Proc. Second International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM '98, Smolenice, Slovakia, 5-7 October 1998 -
Duration: 1 Jan 1998 → …

Conference

Conferenceconference; Proc. Second International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM '98, Smolenice, Slovakia, 5-7 October 1998
Period1/01/98 → …
OtherProc. Second International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM '98, Smolenice, Slovakia, 5-7 October 1998

Cite this

Dillmann, F., Marso, M., Hardtdegen, H., Loeken, M., Kordos, P., Lueth, H., Brennemann, A., Tegude, F. J., Kwaspen, J. J. M., & Kaufmann, L. M. F. (1998). A new concept for a monolithically integrated optoelectronic receiver based on a GaAs-PIN-photodiode and a PJBT. In J. Brenza, D. Donoval, V. Drobny, & F. Uherek (Eds.), Proc. Second International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM '98 (pp. 291-294)