A model for the deposition of a-C: H using an expanding thermal arc

W. M.M. Kessels; J. W.A.M. Gielen; M. C.M. Van De Sanden; L. J. Van Ijzendoorn; E. H.A. Dekempeneer; D. C. Schram

doi:10.1016/S0257-8972(97)00358-7

A model for the deposition of a-C: H using an expanding thermal arc

W. M.M. Kessels, J. W.A.M. Gielen, M. C.M. Van De Sanden, L. J. Van Ijzendoorn, E. H.A. Dekempeneer, D. C. Schram

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Abstract

Amorphous hydrogenated carbon films have been deposited at high growth rates (10-70 nm/s) by seeding acetylene in an expanding thermal argon plasma. The influence of the substrate temperature in the range of -50-300°C on the film properties, e.g. refractive index, hydrogen content and the growth rate, has been investigated. From this, in combination with earlier results, a first attempt at a qualitative deposition model is given.

Original language	English
Pages (from-to)	1584-1589
Number of pages	6
Journal	Surface and Coatings Technology
Volume	98
Issue number	1-3
DOIs	https://doi.org/10.1016/S0257-8972(97)00358-7
Publication status	Published - 1998

Funding

This research was financially supported by the Dutch Foundation for Fundamental Research (FOM) and the European community. The authors wish to thank W. Arnold Bik from Utrecht University for the nuclear analysis of the material. The work of M.C.M. van de Sanden was made possible by the Royal Netherlands Academy of Arts and Sciences. The authors wish to thank M.l.F. van de Sande, A.B.M. HUsken and H. de long for their skillful technical assistance.

Keywords

a-C:H
Deposition
Growth model
Substrate temperature

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10.1016/S0257-8972(97)00358-7

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title = "A model for the deposition of a-C: H using an expanding thermal arc",

abstract = "Amorphous hydrogenated carbon films have been deposited at high growth rates (10-70 nm/s) by seeding acetylene in an expanding thermal argon plasma. The influence of the substrate temperature in the range of -50-300°C on the film properties, e.g. refractive index, hydrogen content and the growth rate, has been investigated. From this, in combination with earlier results, a first attempt at a qualitative deposition model is given.",

keywords = "a-C:H, Deposition, Growth model, Substrate temperature",

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year = "1998",

doi = "10.1016/S0257-8972(97)00358-7",

language = "English",

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journal = "Surface and Coatings Technology",

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T1 - A model for the deposition of a-C

T2 - H using an expanding thermal arc

AU - Kessels, W. M.M.

AU - Gielen, J. W.A.M.

AU - Van De Sanden, M. C.M.

AU - Van Ijzendoorn, L. J.

AU - Dekempeneer, E. H.A.

AU - Schram, D. C.

PY - 1998

Y1 - 1998

N2 - Amorphous hydrogenated carbon films have been deposited at high growth rates (10-70 nm/s) by seeding acetylene in an expanding thermal argon plasma. The influence of the substrate temperature in the range of -50-300°C on the film properties, e.g. refractive index, hydrogen content and the growth rate, has been investigated. From this, in combination with earlier results, a first attempt at a qualitative deposition model is given.

AB - Amorphous hydrogenated carbon films have been deposited at high growth rates (10-70 nm/s) by seeding acetylene in an expanding thermal argon plasma. The influence of the substrate temperature in the range of -50-300°C on the film properties, e.g. refractive index, hydrogen content and the growth rate, has been investigated. From this, in combination with earlier results, a first attempt at a qualitative deposition model is given.

KW - a-C:H

KW - Deposition

KW - Growth model

KW - Substrate temperature

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DO - 10.1016/S0257-8972(97)00358-7

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EP - 1589

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

IS - 1-3

ER -

A model for the deposition of a-C: H using an expanding thermal arc

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Keywords

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