A mobility model for MOSFET device simulation

A. J. Walker, P. H. Woerlee

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

The device characteristics of sub-micron MOS transistors depend strongly on the mobility of the charge carriers in the inversion layer. A new low lateral field mobility model for the normal field dependence will be presented. Good agreement was found between the predicted and measured mobilities for a large variety of samples. The model was successfully incorporated into a two - dimensional device simulation program which gave predictions agreeing well with experimental data.

Original languageEnglish
Title of host publicationESSDERC 1988 - 18th European Solid State Device Research Conference
EditorsJ.-P. Nougier, D. Gasquet
PublisherIEEE Computer Society
PagesC4265-C4268
ISBN (Electronic)2868830994
ISBN (Print)9782868830999
Publication statusPublished - 1 Jan 1988
Externally publishedYes
Event18th European Solid State Device Research Conference, ESSDERC 1988 - Montpellier, France
Duration: 13 Sep 198816 Sep 1988

Publication series

NameJournal de Physique. Colloque
Number9, suppl.
Volume49, C4
ISSN (Print)0449-1947

Conference

Conference18th European Solid State Device Research Conference, ESSDERC 1988
CountryFrance
CityMontpellier
Period13/09/8816/09/88

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