@inproceedings{3e158e70308d40c89943e1e33dcc4d92,
title = "A mobility model for MOSFET device simulation",
abstract = "The device characteristics of sub-micron MOS transistors depend strongly on the mobility of the charge carriers in the inversion layer. A new low lateral field mobility model for the normal field dependence will be presented. Good agreement was found between the predicted and measured mobilities for a large variety of samples. The model was successfully incorporated into a two - dimensional device simulation program which gave predictions agreeing well with experimental data.",
author = "Walker, {A. J.} and Woerlee, {P. H.}",
year = "1988",
month = jan,
day = "1",
language = "English",
isbn = "9782868830999",
series = "Journal de Physique. Colloque",
publisher = "IEEE Computer Society",
number = "9, suppl.",
pages = "C4265--C4268",
editor = "J.-P. Nougier and D. Gasquet",
booktitle = "ESSDERC 1988 - 18th European Solid State Device Research Conference",
address = "United States",
note = "18th European Solid State Device Research Conference, ESSDERC 1988 ; Conference date: 13-09-1988 Through 16-09-1988",
}