A mini-ALE attachment to UHV sufrace analysis equipment

R.G. Welzenis, van; R.A.M. Bink; H.H. Brongersma

doi:10.1016/S0169-4332(96)00496-5

A mini-ALE attachment to UHV sufrace analysis equipment

R.G. Welzenis, van, R.A.M. Bink, H.H. Brongersma

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Abstract

An atomic layer epitaxy (ALE) module has been developed that can be attached to a port of UHV surface analysis equipment. In our case this would, for instance, enable analysis by low energy ion scattering (LEIS), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). This so-called mini-ALE will be used to study and optimize the growth mechanisms of mono-atomic and sub-monatomic metal layers and to prepare model samples for studies of catalysts and small metal clusters. The mini-ALE basically consists of a small (˜ 1 cm3) growth chamber suspended in an UHV environment, with valved inlets for the reaction and purge gases. The sample can be transferred to the analysis chamber via a load-lock. The surface temperature of the sample can be controlled from room temperature to approximately 500°C. The system was tested by attaching it to one of our LEIS set-ups and growing CuO on Al2O3, using Cu(acac)2 and artificial air as reactants. Cu growth was observed, covering about 3% of the surface. Results on growth as a function of surface temperature are given.

Original language	English
Pages (from-to)	255-259
Number of pages	5
Journal	Applied Surface Science
Volume	107
Issue number	2
DOIs	https://doi.org/10.1016/S0169-4332(96)00496-5
Publication status	Published - 1996

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title = "A mini-ALE attachment to UHV sufrace analysis equipment",

abstract = "An atomic layer epitaxy (ALE) module has been developed that can be attached to a port of UHV surface analysis equipment. In our case this would, for instance, enable analysis by low energy ion scattering (LEIS), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). This so-called mini-ALE will be used to study and optimize the growth mechanisms of mono-atomic and sub-monatomic metal layers and to prepare model samples for studies of catalysts and small metal clusters. The mini-ALE basically consists of a small (˜ 1 cm3) growth chamber suspended in an UHV environment, with valved inlets for the reaction and purge gases. The sample can be transferred to the analysis chamber via a load-lock. The surface temperature of the sample can be controlled from room temperature to approximately 500°C. The system was tested by attaching it to one of our LEIS set-ups and growing CuO on Al2O3, using Cu(acac)2 and artificial air as reactants. Cu growth was observed, covering about 3% of the surface. Results on growth as a function of surface temperature are given.",

author = "{Welzenis, van}, R.G. and R.A.M. Bink and H.H. Brongersma",

year = "1996",

doi = "10.1016/S0169-4332(96)00496-5",

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journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

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T1 - A mini-ALE attachment to UHV sufrace analysis equipment

AU - Welzenis, van, R.G.

AU - Bink, R.A.M.

AU - Brongersma, H.H.

PY - 1996

Y1 - 1996

N2 - An atomic layer epitaxy (ALE) module has been developed that can be attached to a port of UHV surface analysis equipment. In our case this would, for instance, enable analysis by low energy ion scattering (LEIS), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). This so-called mini-ALE will be used to study and optimize the growth mechanisms of mono-atomic and sub-monatomic metal layers and to prepare model samples for studies of catalysts and small metal clusters. The mini-ALE basically consists of a small (˜ 1 cm3) growth chamber suspended in an UHV environment, with valved inlets for the reaction and purge gases. The sample can be transferred to the analysis chamber via a load-lock. The surface temperature of the sample can be controlled from room temperature to approximately 500°C. The system was tested by attaching it to one of our LEIS set-ups and growing CuO on Al2O3, using Cu(acac)2 and artificial air as reactants. Cu growth was observed, covering about 3% of the surface. Results on growth as a function of surface temperature are given.

AB - An atomic layer epitaxy (ALE) module has been developed that can be attached to a port of UHV surface analysis equipment. In our case this would, for instance, enable analysis by low energy ion scattering (LEIS), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). This so-called mini-ALE will be used to study and optimize the growth mechanisms of mono-atomic and sub-monatomic metal layers and to prepare model samples for studies of catalysts and small metal clusters. The mini-ALE basically consists of a small (˜ 1 cm3) growth chamber suspended in an UHV environment, with valved inlets for the reaction and purge gases. The sample can be transferred to the analysis chamber via a load-lock. The surface temperature of the sample can be controlled from room temperature to approximately 500°C. The system was tested by attaching it to one of our LEIS set-ups and growing CuO on Al2O3, using Cu(acac)2 and artificial air as reactants. Cu growth was observed, covering about 3% of the surface. Results on growth as a function of surface temperature are given.

U2 - 10.1016/S0169-4332(96)00496-5

DO - 10.1016/S0169-4332(96)00496-5

M3 - Article

SN - 0169-4332

VL - 107

SP - 255

EP - 259

JO - Applied Surface Science

JF - Applied Surface Science

IS - 2

ER -

A mini-ALE attachment to UHV sufrace analysis equipment

Abstract

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