A Magnetically Coupled Dual-Core 154-GHz Class-F Oscillator with -177.1 FoM and -87 dBc/Hz PN at 1-MHz Offset in a 22-nm FDSOI with Third-Harmonic Extraction

Sarthak Sharma; Hao Gao; Gernot Hueber; Andrea Mazzanti

doi:10.1109/VLSITechnologyandCir46769.2022.9830187

A Magnetically Coupled Dual-Core 154-GHz Class-F Oscillator with -177.1 FoM and -87 dBc/Hz PN at 1-MHz Offset in a 22-nm FDSOI with Third-Harmonic Extraction

Sarthak Sharma
, Hao Gao
, Gernot Hueber
, Andrea Mazzanti

Integrated Circuits

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

6 Citations (Scopus)

Abstract

This paper presents a 142-154 GHz third-harmonic extracted Class-F oscillator featuring an FoM of -177.1 at 1-MHz offset. In this work, a magnetically coupled dual-core topology is applied to enhance the third harmonic for Class-F operation, which also effectively boosts the negative conductance of the oscillator. The boosted negative conductance relaxes the startup condition in the Colpitts oscillator and improves its phase noise. This oscillator is fabricated in a 22-nm CMOS FDSOI. At 154.5 GHz, the measured PN is -87.4 dBc/Hz at 1-MHz offset, and -101.8 dBc/Hz at 10 MHz offset.

Original language	English
Title of host publication	2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Publisher	Institute of Electrical and Electronics Engineers
Pages	12-13
Number of pages	2
ISBN (Electronic)	978-1-6654-9772-5
DOIs	https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830187
Publication status	Published - 22 Jul 2022
Event	2022 IEEE Symposium on VLSI Technology & Circuits - Hilton Hawaiian Village, Honolulu, United States Duration: 12 Jun 2022 → 17 Jun 2022

Conference

Conference	2022 IEEE Symposium on VLSI Technology & Circuits
Country/Territory	United States
City	Honolulu
Period	12/06/22 → 17/06/22

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10.1109/VLSITechnologyandCir46769.2022.9830187

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Sharma, S., Gao, H., Hueber, G., & Mazzanti, A. (2022). A Magnetically Coupled Dual-Core 154-GHz Class-F Oscillator with -177.1 FoM and -87 dBc/Hz PN at 1-MHz Offset in a 22-nm FDSOI with Third-Harmonic Extraction. In 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (pp. 12-13). Article 9830187 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830187

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title = "A Magnetically Coupled Dual-Core 154-GHz Class-F Oscillator with -177.1 FoM and -87 dBc/Hz PN at 1-MHz Offset in a 22-nm FDSOI with Third-Harmonic Extraction",

abstract = "This paper presents a 142-154 GHz third-harmonic extracted Class-F oscillator featuring an FoM of -177.1 at 1-MHz offset. In this work, a magnetically coupled dual-core topology is applied to enhance the third harmonic for Class-F operation, which also effectively boosts the negative conductance of the oscillator. The boosted negative conductance relaxes the startup condition in the Colpitts oscillator and improves its phase noise. This oscillator is fabricated in a 22-nm CMOS FDSOI. At 154.5 GHz, the measured PN is -87.4 dBc/Hz at 1-MHz offset, and -101.8 dBc/Hz at 10 MHz offset.",

author = "Sarthak Sharma and Hao Gao and Gernot Hueber and Andrea Mazzanti",

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doi = "10.1109/VLSITechnologyandCir46769.2022.9830187",

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Sharma, S, Gao, H, Hueber, G & Mazzanti, A 2022, A Magnetically Coupled Dual-Core 154-GHz Class-F Oscillator with -177.1 FoM and -87 dBc/Hz PN at 1-MHz Offset in a 22-nm FDSOI with Third-Harmonic Extraction. in 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)., 9830187, Institute of Electrical and Electronics Engineers, pp. 12-13, 2022 IEEE Symposium on VLSI Technology & Circuits, Honolulu, Hawaii, United States, 12/06/22. https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830187

A Magnetically Coupled Dual-Core 154-GHz Class-F Oscillator with -177.1 FoM and -87 dBc/Hz PN at 1-MHz Offset in a 22-nm FDSOI with Third-Harmonic Extraction. / Sharma, Sarthak; Gao, Hao; Hueber, Gernot et al.
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). Institute of Electrical and Electronics Engineers, 2022. p. 12-13 9830187.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Sharma, Sarthak

AU - Gao, Hao

AU - Hueber, Gernot

AU - Mazzanti, Andrea

PY - 2022/7/22

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N2 - This paper presents a 142-154 GHz third-harmonic extracted Class-F oscillator featuring an FoM of -177.1 at 1-MHz offset. In this work, a magnetically coupled dual-core topology is applied to enhance the third harmonic for Class-F operation, which also effectively boosts the negative conductance of the oscillator. The boosted negative conductance relaxes the startup condition in the Colpitts oscillator and improves its phase noise. This oscillator is fabricated in a 22-nm CMOS FDSOI. At 154.5 GHz, the measured PN is -87.4 dBc/Hz at 1-MHz offset, and -101.8 dBc/Hz at 10 MHz offset.

AB - This paper presents a 142-154 GHz third-harmonic extracted Class-F oscillator featuring an FoM of -177.1 at 1-MHz offset. In this work, a magnetically coupled dual-core topology is applied to enhance the third harmonic for Class-F operation, which also effectively boosts the negative conductance of the oscillator. The boosted negative conductance relaxes the startup condition in the Colpitts oscillator and improves its phase noise. This oscillator is fabricated in a 22-nm CMOS FDSOI. At 154.5 GHz, the measured PN is -87.4 dBc/Hz at 1-MHz offset, and -101.8 dBc/Hz at 10 MHz offset.

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BT - 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

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Sharma S, Gao H, Hueber G, Mazzanti A. A Magnetically Coupled Dual-Core 154-GHz Class-F Oscillator with -177.1 FoM and -87 dBc/Hz PN at 1-MHz Offset in a 22-nm FDSOI with Third-Harmonic Extraction. In 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). Institute of Electrical and Electronics Engineers. 2022. p. 12-13. 9830187 doi: 10.1109/VLSITechnologyandCir46769.2022.9830187

A Magnetically Coupled Dual-Core 154-GHz Class-F Oscillator with -177.1 FoM and -87 dBc/Hz PN at 1-MHz Offset in a 22-nm FDSOI with Third-Harmonic Extraction

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