A lower-power, high-sensitivity injection-locked oscillator for 60 GHz WPAN applications

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Abstract

This article presents a 60 GHz low-power injection-locked oscillator in TSMC 65 nm technology. By using the frequency sweeping technique, a simulated 7 GHz total locking range is achieved, which covers the entire 60 GHz ISM band. The simulated settling time is less than 2 ns for each sweeping step with -60 dBm injection power. The DC power consumption is 1 mW of the oscillator core, and 5 mW in total for the input and output buffers, which are mainly used for the matching purpose.
Original languageEnglish
Title of host publicationProceedings of Asia Pacific Conference on Postgraduate Research in Microlectronics and Electronics 2009, PrimeAsia 2009, November 19-21, 2009, Shanghai, China
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages161-164
ISBN (Print)978-1-4244-4668-1
DOIs
Publication statusPublished - 2009

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Li, X., Baltus, P. G. M., van Zeijl, P., Milosevic, D., & Roermund, van, A. H. M. (2009). A lower-power, high-sensitivity injection-locked oscillator for 60 GHz WPAN applications. In Proceedings of Asia Pacific Conference on Postgraduate Research in Microlectronics and Electronics 2009, PrimeAsia 2009, November 19-21, 2009, Shanghai, China (pp. 161-164). Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PRIMEASIA.2009.5397421