A low-resistance spiking-free n-type ohmic contact for InP membrane devices

L. Shen, Y. Jiao, L.M. Augustin, K. Sander, J.J.G.M. Tol, van der, H.P.M.M. Ambrosius, G. Roelkens, M.K. Smit

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)
3 Downloads (Pure)

Abstract

Au spiking is a long-standing problem for Ni/Ge/Au ohmic contacts on n-InP. This becomes more critical when the contacts are deposited on top of thin membrane devices. In order to reduce the spiking while maintaining a low resistance, we present a new approach which reduces the amount of Au in these contacts. A low specific contact resistance of 7×10-7 O cm2 is obtained after a 15 s annealing at 400 ºC. Afterwards the contacts can be thickened with an extra deposition of metals. Scanning electron microscope pictures show abrupt and uniform interfaces between metals and semiconductors.
Original languageEnglish
Title of host publicationThe 26th International Conference on Indium Phosphide and Related Materials (IPRM), 2014, Montpellier, France
Publication statusPublished - 2014

Fingerprint

Dive into the research topics of 'A low-resistance spiking-free n-type ohmic contact for InP membrane devices'. Together they form a unique fingerprint.

Cite this