A large-area gravure printed process for P-type organic thin-film transistors on plastic substrates

M. Charbonneau, D. Locatelli, S. Lombard, C. Serbutoviez, L. Tournon, F. Torricelli, S. Abdinia, E. Cantatore, M. Fattori

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

This paper presents a p-type Organic Thin-film Transistor (OTFT) technology based on gravure printing, specifically developed for scale-up and transfer to a Pilot Line (GEN1 320 × 380 mm2), In order to enable large-area and high-throughput processing for cost-effective electronic circuitry and sensors backplane production, this technology exploits an organic polymer semiconductor with high mobility (μ > 2 cm2/V/s) engineered to be processed by gravure printing. A statistical analysis of the printed patterns and of the OTFT electrical performance are presented. Modelling of the technology for a Design Tool Kit is presented and preliminary results on circuit measurement are described, achieving state of the art performance for gravure-printed circuits. A propagation delay of 8.7 μs has been estimated for a single inverter, based on measurements of a 7-stage ring oscillator. A single-ended inverter-based amplifier shows a gain of 23.7 dB, a cut-off frequency of 24.5 Hz and an integrated input-referred noise of 576.8 μ Vrms for a current consumption of 3.5 μA.

LanguageEnglish
Title of host publication2018 48th European Solid-State Device Research Conference, ESSDERC 2018
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages70-73
Number of pages4
ISBN (Electronic)978-1-5386-5401-9
ISBN (Print)978-1-5386-5402-6
DOIs
StatePublished - 8 Oct 2018
Event48th European Solid-State Device Research Conference, ESSDERC 2018 - Dresden, Germany
Duration: 3 Sep 20186 Sep 2018

Conference

Conference48th European Solid-State Device Research Conference, ESSDERC 2018
CountryGermany
CityDresden
Period3/09/186/09/18

Fingerprint

Thin film transistors
Plastics
Printing
Substrates
Printed circuits
Organic polymers
Cutoff frequency
Statistical methods
Throughput
Semiconductor materials
Networks (circuits)
Sensors
Processing
Costs

Keywords

  • flexible substrate
  • gravure-printing
  • organic electronics
  • OTFTs

Cite this

Charbonneau, M., Locatelli, D., Lombard, S., Serbutoviez, C., Tournon, L., Torricelli, F., ... Fattori, M. (2018). A large-area gravure printed process for P-type organic thin-film transistors on plastic substrates. In 2018 48th European Solid-State Device Research Conference, ESSDERC 2018 (pp. 70-73). [8486895] Piscataway: Institute of Electrical and Electronics Engineers. DOI: 10.1109/ESSDERC.2018.8486895
Charbonneau, M. ; Locatelli, D. ; Lombard, S. ; Serbutoviez, C. ; Tournon, L. ; Torricelli, F. ; Abdinia, S. ; Cantatore, E. ; Fattori, M./ A large-area gravure printed process for P-type organic thin-film transistors on plastic substrates. 2018 48th European Solid-State Device Research Conference, ESSDERC 2018. Piscataway : Institute of Electrical and Electronics Engineers, 2018. pp. 70-73
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Charbonneau, M, Locatelli, D, Lombard, S, Serbutoviez, C, Tournon, L, Torricelli, F, Abdinia, S, Cantatore, E & Fattori, M 2018, A large-area gravure printed process for P-type organic thin-film transistors on plastic substrates. in 2018 48th European Solid-State Device Research Conference, ESSDERC 2018., 8486895, Institute of Electrical and Electronics Engineers, Piscataway, pp. 70-73, 48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, Germany, 3/09/18. DOI: 10.1109/ESSDERC.2018.8486895

A large-area gravure printed process for P-type organic thin-film transistors on plastic substrates. / Charbonneau, M.; Locatelli, D.; Lombard, S.; Serbutoviez, C.; Tournon, L.; Torricelli, F.; Abdinia, S.; Cantatore, E.; Fattori, M.

2018 48th European Solid-State Device Research Conference, ESSDERC 2018. Piscataway : Institute of Electrical and Electronics Engineers, 2018. p. 70-73 8486895.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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AU - Lombard,S.

AU - Serbutoviez,C.

AU - Tournon,L.

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AU - Abdinia,S.

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AU - Fattori,M.

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N2 - This paper presents a p-type Organic Thin-film Transistor (OTFT) technology based on gravure printing, specifically developed for scale-up and transfer to a Pilot Line (GEN1 320 × 380 mm2), In order to enable large-area and high-throughput processing for cost-effective electronic circuitry and sensors backplane production, this technology exploits an organic polymer semiconductor with high mobility (μ > 2 cm2/V/s) engineered to be processed by gravure printing. A statistical analysis of the printed patterns and of the OTFT electrical performance are presented. Modelling of the technology for a Design Tool Kit is presented and preliminary results on circuit measurement are described, achieving state of the art performance for gravure-printed circuits. A propagation delay of 8.7 μs has been estimated for a single inverter, based on measurements of a 7-stage ring oscillator. A single-ended inverter-based amplifier shows a gain of 23.7 dB, a cut-off frequency of 24.5 Hz and an integrated input-referred noise of 576.8 μ Vrms for a current consumption of 3.5 μA.

AB - This paper presents a p-type Organic Thin-film Transistor (OTFT) technology based on gravure printing, specifically developed for scale-up and transfer to a Pilot Line (GEN1 320 × 380 mm2), In order to enable large-area and high-throughput processing for cost-effective electronic circuitry and sensors backplane production, this technology exploits an organic polymer semiconductor with high mobility (μ > 2 cm2/V/s) engineered to be processed by gravure printing. A statistical analysis of the printed patterns and of the OTFT electrical performance are presented. Modelling of the technology for a Design Tool Kit is presented and preliminary results on circuit measurement are described, achieving state of the art performance for gravure-printed circuits. A propagation delay of 8.7 μs has been estimated for a single inverter, based on measurements of a 7-stage ring oscillator. A single-ended inverter-based amplifier shows a gain of 23.7 dB, a cut-off frequency of 24.5 Hz and an integrated input-referred noise of 576.8 μ Vrms for a current consumption of 3.5 μA.

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M3 - Conference contribution

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EP - 73

BT - 2018 48th European Solid-State Device Research Conference, ESSDERC 2018

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

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Charbonneau M, Locatelli D, Lombard S, Serbutoviez C, Tournon L, Torricelli F et al. A large-area gravure printed process for P-type organic thin-film transistors on plastic substrates. In 2018 48th European Solid-State Device Research Conference, ESSDERC 2018. Piscataway: Institute of Electrical and Electronics Engineers. 2018. p. 70-73. 8486895. Available from, DOI: 10.1109/ESSDERC.2018.8486895