A high-resolution study of two-dimensional oxidation-enhanced diffusion in silicon

M. J. Van Dort; H. Lifka; P. C. Zalm; R. C.M. de Kruif; W. B. de Boer; P. H. Woerlee; C. A.H. Juffermans; A. J. Walker; J. W. Slotboom; N. E.B. Cowern

doi:10.1109/IEDM.1993.347348

A high-resolution study of two-dimensional oxidation-enhanced diffusion in silicon

M. J. Van Dort
, H. Lifka
, P. C. Zalm
, R. C.M. de Kruif
, W. B. de Boer
, P. H. Woerlee
, C. A.H. Juffermans
, A. J. Walker
, J. W. Slotboom
, N. E.B. Cowern

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

5 Citations (Scopus)

Abstract

A new method for the determination of two-dimensional oxidation-enhanced diffusion (OED) is presented. The resolution of the technique in the lateral direction is ≈ 10 nm. The technique is used to study the influence of the gate reoxidation step on the channel profile of MOSFET's. For boron, it will be shown that the lateral extent of OED depends on the depth. The same technique is used to study segregation of boron during the lateral oxidation of the polysilicon gate.

Original language	English
Title of host publication	Technical Digest - International Electron Devices Meeting
Publisher	Institute of Electrical and Electronics Engineers
Pages	299-302
Number of pages	4
ISBN (Print)	0780314506
DOIs	https://doi.org/10.1109/IEDM.1993.347348
Publication status	Published - 1 Dec 1993
Externally published	Yes
Event	1993 IEEE International Electron Devices Meeting, IEDM 1993 - Washington, United States Duration: 5 Dec 1993 → 8 Dec 1993

Conference

Conference	1993 IEEE International Electron Devices Meeting, IEDM 1993
Country/Territory	United States
City	Washington
Period	5/12/93 → 8/12/93

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10.1109/IEDM.1993.347348

Cite this

Van Dort, M. J., Lifka, H., Zalm, P. C., de Kruif, R. C. M., de Boer, W. B., Woerlee, P. H., Juffermans, C. A. H., Walker, A. J., Slotboom, J. W., & Cowern, N. E. B. (1993). A high-resolution study of two-dimensional oxidation-enhanced diffusion in silicon. In Technical Digest - International Electron Devices Meeting (pp. 299-302). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/IEDM.1993.347348

@inproceedings{0b568ba0f98941fbad1ec76b7df710cb,

title = "A high-resolution study of two-dimensional oxidation-enhanced diffusion in silicon",

abstract = "A new method for the determination of two-dimensional oxidation-enhanced diffusion (OED) is presented. The resolution of the technique in the lateral direction is ≈ 10 nm. The technique is used to study the influence of the gate reoxidation step on the channel profile of MOSFET's. For boron, it will be shown that the lateral extent of OED depends on the depth. The same technique is used to study segregation of boron during the lateral oxidation of the polysilicon gate.",

author = "\{Van Dort\}, \{M. J.\} and H. Lifka and Zalm, \{P. C.\} and \{de Kruif\}, \{R. C.M.\} and \{de Boer\}, \{W. B.\} and Woerlee, \{P. H.\} and Juffermans, \{C. A.H.\} and Walker, \{A. J.\} and Slotboom, \{J. W.\} and Cowern, \{N. E.B.\}",

year = "1993",

month = dec,

day = "1",

doi = "10.1109/IEDM.1993.347348",

language = "English",

isbn = "0780314506",

pages = "299--302",

booktitle = "Technical Digest - International Electron Devices Meeting",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "1993 IEEE International Electron Devices Meeting, IEDM 1993 ; Conference date: 05-12-1993 Through 08-12-1993",

}

Van Dort, MJ, Lifka, H, Zalm, PC, de Kruif, RCM, de Boer, WB, Woerlee, PH, Juffermans, CAH, Walker, AJ, Slotboom, JW & Cowern, NEB 1993, A high-resolution study of two-dimensional oxidation-enhanced diffusion in silicon. in Technical Digest - International Electron Devices Meeting. Institute of Electrical and Electronics Engineers, pp. 299-302, 1993 IEEE International Electron Devices Meeting, IEDM 1993, Washington, Washington, United States, 5/12/93. https://doi.org/10.1109/IEDM.1993.347348

A high-resolution study of two-dimensional oxidation-enhanced diffusion in silicon. / Van Dort, M. J.; Lifka, H.; Zalm, P. C. et al.
Technical Digest - International Electron Devices Meeting. Institute of Electrical and Electronics Engineers, 1993. p. 299-302.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - A high-resolution study of two-dimensional oxidation-enhanced diffusion in silicon

AU - Van Dort, M. J.

AU - Lifka, H.

AU - Zalm, P. C.

AU - de Kruif, R. C.M.

AU - de Boer, W. B.

AU - Woerlee, P. H.

AU - Juffermans, C. A.H.

AU - Walker, A. J.

AU - Slotboom, J. W.

AU - Cowern, N. E.B.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - A new method for the determination of two-dimensional oxidation-enhanced diffusion (OED) is presented. The resolution of the technique in the lateral direction is ≈ 10 nm. The technique is used to study the influence of the gate reoxidation step on the channel profile of MOSFET's. For boron, it will be shown that the lateral extent of OED depends on the depth. The same technique is used to study segregation of boron during the lateral oxidation of the polysilicon gate.

AB - A new method for the determination of two-dimensional oxidation-enhanced diffusion (OED) is presented. The resolution of the technique in the lateral direction is ≈ 10 nm. The technique is used to study the influence of the gate reoxidation step on the channel profile of MOSFET's. For boron, it will be shown that the lateral extent of OED depends on the depth. The same technique is used to study segregation of boron during the lateral oxidation of the polysilicon gate.

UR - https://www.scopus.com/pages/publications/0027879116

U2 - 10.1109/IEDM.1993.347348

DO - 10.1109/IEDM.1993.347348

M3 - Conference contribution

AN - SCOPUS:0027879116

SN - 0780314506

SP - 299

EP - 302

BT - Technical Digest - International Electron Devices Meeting

PB - Institute of Electrical and Electronics Engineers

T2 - 1993 IEEE International Electron Devices Meeting, IEDM 1993

Y2 - 5 December 1993 through 8 December 1993

ER -

A high-resolution study of two-dimensional oxidation-enhanced diffusion in silicon

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