The purpose of this work is to propose a novel electrothermal co-simulation approach for the new generation of SiC MOSFETs, by development of a PSpice-based compact and physical SiC MOSFET model including temperature dependency of several parameters and a Simulink-based thermal network. The PSpice electrical model is capable to estimate the switching behavior and the energy losses of the device accurately under a wide range of operational conditions, including high temperature operations, within a relatively fast simulation time (few seconds). The the thermal network elements are extracted from the FEM simulation of the DUT's structure, performed in ANSYS Icepack. A MATLAB script is used to process the simulation data and feed the needed settings and parameters back into the simulation. The parameters for a CREE 1.2 kV/30 A SiC MOSFET have been identified and the electro-thermal model has been validated through experimental and manufacturer's data.
|Title of host publication||2017 IEEE Applied Power Electronics Conference and Exposition, APEC 2017|
|Publisher||Institute of Electrical and Electronics Engineers|
|Number of pages||8|
|Publication status||Published - 17 May 2017|
|Event||32th Annual IEEE Applied Power Electronics Conference and Exposition (APEC 2017) - Tampa, United States|
Duration: 26 Mar 2017 → 30 Mar 2017
Conference number: 32
|Conference||32th Annual IEEE Applied Power Electronics Conference and Exposition (APEC 2017)|
|Abbreviated title||APEC 2017|
|Period||26/03/17 → 30/03/17|
Bibliographical notePublisher Copyright:
© 2017 IEEE.
- Electro-thermal modeling
- PSpice modeling
- Wide bandgap devices