A fast electro-thermal co-simulation modeling approach for SiC power MOSFETs

Lorenzo Ceccarelli, Amir Sajjad Bahman, Francesco Iannuzzo, Frede Blaabjerg

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

18 Citations (Scopus)

Abstract

The purpose of this work is to propose a novel electrothermal co-simulation approach for the new generation of SiC MOSFETs, by development of a PSpice-based compact and physical SiC MOSFET model including temperature dependency of several parameters and a Simulink-based thermal network. The PSpice electrical model is capable to estimate the switching behavior and the energy losses of the device accurately under a wide range of operational conditions, including high temperature operations, within a relatively fast simulation time (few seconds). The the thermal network elements are extracted from the FEM simulation of the DUT's structure, performed in ANSYS Icepack. A MATLAB script is used to process the simulation data and feed the needed settings and parameters back into the simulation. The parameters for a CREE 1.2 kV/30 A SiC MOSFET have been identified and the electro-thermal model has been validated through experimental and manufacturer's data.

Original languageEnglish
Title of host publication2017 IEEE Applied Power Electronics Conference and Exposition, APEC 2017
PublisherInstitute of Electrical and Electronics Engineers
Pages966-973
Number of pages8
ISBN (Electronic)9781509053667
DOIs
Publication statusPublished - 17 May 2017
Externally publishedYes
Event32th Annual IEEE Applied Power Electronics Conference and Exposition (APEC 2017) - Tampa, United States
Duration: 26 Mar 201730 Mar 2017
Conference number: 32
http://www.apec-conf.org/

Conference

Conference32th Annual IEEE Applied Power Electronics Conference and Exposition (APEC 2017)
Abbreviated titleAPEC 2017
Country/TerritoryUnited States
CityTampa
Period26/03/1730/03/17
Internet address

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

Keywords

  • Electro-thermal modeling
  • PSpice modeling
  • SiC-MOSFETs
  • Wide bandgap devices

Fingerprint

Dive into the research topics of 'A fast electro-thermal co-simulation modeling approach for SiC power MOSFETs'. Together they form a unique fingerprint.

Cite this