A fast electro-thermal co-simulation modeling approach for SiC power MOSFETs

Lorenzo Ceccarelli; Amir Sajjad Bahman; Francesco Iannuzzo; Frede Blaabjerg

doi:10.1109/APEC.2017.7930813

A fast electro-thermal co-simulation modeling approach for SiC power MOSFETs

Lorenzo Ceccarelli, Amir Sajjad Bahman, Francesco Iannuzzo, Frede Blaabjerg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

24 Citations (Scopus)

Abstract

The purpose of this work is to propose a novel electrothermal co-simulation approach for the new generation of SiC MOSFETs, by development of a PSpice-based compact and physical SiC MOSFET model including temperature dependency of several parameters and a Simulink-based thermal network. The PSpice electrical model is capable to estimate the switching behavior and the energy losses of the device accurately under a wide range of operational conditions, including high temperature operations, within a relatively fast simulation time (few seconds). The the thermal network elements are extracted from the FEM simulation of the DUT's structure, performed in ANSYS Icepack. A MATLAB script is used to process the simulation data and feed the needed settings and parameters back into the simulation. The parameters for a CREE 1.2 kV/30 A SiC MOSFET have been identified and the electro-thermal model has been validated through experimental and manufacturer's data.

Original language	English
Title of host publication	2017 IEEE Applied Power Electronics Conference and Exposition (APEC)
Publisher	Institute of Electrical and Electronics Engineers
Pages	966-973
Number of pages	8
ISBN (Electronic)	978-1-5090-5366-7
DOIs	https://doi.org/10.1109/APEC.2017.7930813
Publication status	Published - 18 May 2017
Externally published	Yes
Event	32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017 - Tampa, United States Duration: 26 Mar 2017 → 30 Mar 2017 Conference number: 32 http://www.apec-conf.org/

Conference

Conference	32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017
Abbreviated title	APEC 2017
Country/Territory	United States
City	Tampa
Period	26/03/17 → 30/03/17
Internet address	http://www.apec-conf.org/

Keywords

Electro-thermal modeling
PSpice modeling
SiC-MOSFETs
Wide bandgap devices

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10.1109/APEC.2017.7930813

Cite this

@inproceedings{b0ea95299f4f4283a39a942558ebc5f9,

title = "A fast electro-thermal co-simulation modeling approach for SiC power MOSFETs",

abstract = "The purpose of this work is to propose a novel electrothermal co-simulation approach for the new generation of SiC MOSFETs, by development of a PSpice-based compact and physical SiC MOSFET model including temperature dependency of several parameters and a Simulink-based thermal network. The PSpice electrical model is capable to estimate the switching behavior and the energy losses of the device accurately under a wide range of operational conditions, including high temperature operations, within a relatively fast simulation time (few seconds). The the thermal network elements are extracted from the FEM simulation of the DUT's structure, performed in ANSYS Icepack. A MATLAB script is used to process the simulation data and feed the needed settings and parameters back into the simulation. The parameters for a CREE 1.2 kV/30 A SiC MOSFET have been identified and the electro-thermal model has been validated through experimental and manufacturer's data.",

keywords = "Electro-thermal modeling, PSpice modeling, SiC-MOSFETs, Wide bandgap devices",

author = "Lorenzo Ceccarelli and Bahman, {Amir Sajjad} and Francesco Iannuzzo and Frede Blaabjerg",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017, APEC 2017 ; Conference date: 26-03-2017 Through 30-03-2017",

year = "2017",

month = may,

day = "18",

doi = "10.1109/APEC.2017.7930813",

language = "English",

pages = "966--973",

booktitle = "2017 IEEE Applied Power Electronics Conference and Exposition (APEC)",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

url = "http://www.apec-conf.org/",

}

Ceccarelli, L, Bahman, AS, Iannuzzo, F & Blaabjerg, F 2017, A fast electro-thermal co-simulation modeling approach for SiC power MOSFETs. in 2017 IEEE Applied Power Electronics Conference and Exposition (APEC)., 7930813, Institute of Electrical and Electronics Engineers, pp. 966-973, 32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017, Tampa, Florida, United States, 26/03/17. https://doi.org/10.1109/APEC.2017.7930813

A fast electro-thermal co-simulation modeling approach for SiC power MOSFETs. / Ceccarelli, Lorenzo; Bahman, Amir Sajjad; Iannuzzo, Francesco et al.
2017 IEEE Applied Power Electronics Conference and Exposition (APEC). Institute of Electrical and Electronics Engineers, 2017. p. 966-973 7930813.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - A fast electro-thermal co-simulation modeling approach for SiC power MOSFETs

AU - Ceccarelli, Lorenzo

AU - Bahman, Amir Sajjad

AU - Iannuzzo, Francesco

AU - Blaabjerg, Frede

N1 - Conference code: 32

PY - 2017/5/18

Y1 - 2017/5/18

N2 - The purpose of this work is to propose a novel electrothermal co-simulation approach for the new generation of SiC MOSFETs, by development of a PSpice-based compact and physical SiC MOSFET model including temperature dependency of several parameters and a Simulink-based thermal network. The PSpice electrical model is capable to estimate the switching behavior and the energy losses of the device accurately under a wide range of operational conditions, including high temperature operations, within a relatively fast simulation time (few seconds). The the thermal network elements are extracted from the FEM simulation of the DUT's structure, performed in ANSYS Icepack. A MATLAB script is used to process the simulation data and feed the needed settings and parameters back into the simulation. The parameters for a CREE 1.2 kV/30 A SiC MOSFET have been identified and the electro-thermal model has been validated through experimental and manufacturer's data.

AB - The purpose of this work is to propose a novel electrothermal co-simulation approach for the new generation of SiC MOSFETs, by development of a PSpice-based compact and physical SiC MOSFET model including temperature dependency of several parameters and a Simulink-based thermal network. The PSpice electrical model is capable to estimate the switching behavior and the energy losses of the device accurately under a wide range of operational conditions, including high temperature operations, within a relatively fast simulation time (few seconds). The the thermal network elements are extracted from the FEM simulation of the DUT's structure, performed in ANSYS Icepack. A MATLAB script is used to process the simulation data and feed the needed settings and parameters back into the simulation. The parameters for a CREE 1.2 kV/30 A SiC MOSFET have been identified and the electro-thermal model has been validated through experimental and manufacturer's data.

KW - Electro-thermal modeling

KW - PSpice modeling

KW - SiC-MOSFETs

KW - Wide bandgap devices

UR - http://www.scopus.com/inward/record.url?scp=85020013150&partnerID=8YFLogxK

U2 - 10.1109/APEC.2017.7930813

DO - 10.1109/APEC.2017.7930813

M3 - Conference contribution

AN - SCOPUS:85020013150

SP - 966

EP - 973

BT - 2017 IEEE Applied Power Electronics Conference and Exposition (APEC)

PB - Institute of Electrical and Electronics Engineers

T2 - 32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017

Y2 - 26 March 2017 through 30 March 2017

ER -

A fast electro-thermal co-simulation modeling approach for SiC power MOSFETs

Abstract

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Keywords

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