Abstract
The purpose of this work is to propose a novel electrothermal co-simulation approach for the new generation of SiC MOSFETs, by development of a PSpice-based compact and physical SiC MOSFET model including temperature dependency of several parameters and a Simulink-based thermal network. The PSpice electrical model is capable to estimate the switching behavior and the energy losses of the device accurately under a wide range of operational conditions, including high temperature operations, within a relatively fast simulation time (few seconds). The the thermal network elements are extracted from the FEM simulation of the DUT's structure, performed in ANSYS Icepack. A MATLAB script is used to process the simulation data and feed the needed settings and parameters back into the simulation. The parameters for a CREE 1.2 kV/30 A SiC MOSFET have been identified and the electro-thermal model has been validated through experimental and manufacturer's data.
Original language | English |
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Title of host publication | 2017 IEEE Applied Power Electronics Conference and Exposition (APEC) |
Publisher | Institute of Electrical and Electronics Engineers |
Pages | 966-973 |
Number of pages | 8 |
ISBN (Electronic) | 978-1-5090-5366-7 |
DOIs | |
Publication status | Published - 18 May 2017 |
Externally published | Yes |
Event | 32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017 - Tampa, United States Duration: 26 Mar 2017 → 30 Mar 2017 Conference number: 32 http://www.apec-conf.org/ |
Conference
Conference | 32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017 |
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Abbreviated title | APEC 2017 |
Country/Territory | United States |
City | Tampa |
Period | 26/03/17 → 30/03/17 |
Internet address |
Keywords
- Electro-thermal modeling
- PSpice modeling
- SiC-MOSFETs
- Wide bandgap devices