A design approach for SiGe low-noise amplifiers using wideband input matching

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

This paper investigates the feasibility of wideband low-noise amplifiers in bipolar silicon-germanium IC technology. Three different design techniques are compared and the most promising one is analyzed in detail and examined on a design example. We propose a design approach based on an LC-ladder structure as the input matching network. Used in combination with the cascode structure amplifier with inductive degeneration, the dual-LC tank employs two resonant tanks so as to achieve wideband input power matching and noise matching simultaneously. Following the design procedure described in the paper, a 20-40 GHz low noise amplifier is designed and the simulation results are provided to verify the proposed approach.
LanguageEnglish
Title of host publication2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Number of pages4
ISBN (Electronic)978-1-5386-7656-1
DOIs
StatePublished - 2018

Fingerprint

Low noise amplifiers
Broadband amplifiers
Ladders
Germanium
Silicon

Keywords

  • bipolar integrated circuits
  • CMOS analogue integrated circuits
  • Ge-Si alloys
  • integrated circuit design
  • ladder networks
  • LC circuits
  • low noise amplifiers
  • microwave amplifiers
  • microwave integrated circuits
  • millimetre wave amplifiers
  • millimetre wave integrated circuits
  • semiconductor materials
  • wideband amplifiers
  • bipolar silicon-germanium IC technology
  • LC-ladder structure
  • input matching network
  • cascode structure amplifier
  • dual-LC tank
  • resonant tanks
  • wideband input power matching
  • noise matching
  • design procedure
  • design techniques
  • wideband low noise amplifier
  • inductive degeneration
  • frequency 20.0 GHz to 40.0 GHz
  • SiGe
  • Wideband
  • Impedance matching
  • Gain
  • Inductors
  • Resonant frequency
  • Transistors
  • low noise amplifier (LNA)
  • wideband Matching
  • LC ladder
  • silicon-germanium (SiGe)

Cite this

Chen, Z., Gao, H., & Baltus, P. G. M. (2018). A design approach for SiGe low-noise amplifiers using wideband input matching. In 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC) [8573488] Piscataway: Institute of Electrical and Electronics Engineers. DOI: 10.1109/NORCHIP.2018.8573488
Chen, Z. ; Gao, H. ; Baltus, P.G.M./ A design approach for SiGe low-noise amplifiers using wideband input matching. 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC). Piscataway : Institute of Electrical and Electronics Engineers, 2018.
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title = "A design approach for SiGe low-noise amplifiers using wideband input matching",
abstract = "This paper investigates the feasibility of wideband low-noise amplifiers in bipolar silicon-germanium IC technology. Three different design techniques are compared and the most promising one is analyzed in detail and examined on a design example. We propose a design approach based on an LC-ladder structure as the input matching network. Used in combination with the cascode structure amplifier with inductive degeneration, the dual-LC tank employs two resonant tanks so as to achieve wideband input power matching and noise matching simultaneously. Following the design procedure described in the paper, a 20-40 GHz low noise amplifier is designed and the simulation results are provided to verify the proposed approach.",
keywords = "bipolar integrated circuits, CMOS analogue integrated circuits, Ge-Si alloys, integrated circuit design, ladder networks, LC circuits, low noise amplifiers, microwave amplifiers, microwave integrated circuits, millimetre wave amplifiers, millimetre wave integrated circuits, semiconductor materials, wideband amplifiers, bipolar silicon-germanium IC technology, LC-ladder structure, input matching network, cascode structure amplifier, dual-LC tank, resonant tanks, wideband input power matching, noise matching, design procedure, design techniques, wideband low noise amplifier, inductive degeneration, frequency 20.0 GHz to 40.0 GHz, SiGe, Wideband, Impedance matching, Gain, Inductors, Resonant frequency, Transistors, low noise amplifier (LNA), wideband Matching, LC ladder, silicon-germanium (SiGe)",
author = "Z. Chen and H. Gao and P.G.M. Baltus",
year = "2018",
doi = "10.1109/NORCHIP.2018.8573488",
language = "English",
booktitle = "2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)",
publisher = "Institute of Electrical and Electronics Engineers",
address = "United States",

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Chen, Z, Gao, H & Baltus, PGM 2018, A design approach for SiGe low-noise amplifiers using wideband input matching. in 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)., 8573488, Institute of Electrical and Electronics Engineers, Piscataway. DOI: 10.1109/NORCHIP.2018.8573488

A design approach for SiGe low-noise amplifiers using wideband input matching. / Chen, Z.; Gao, H.; Baltus, P.G.M.

2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC). Piscataway : Institute of Electrical and Electronics Engineers, 2018. 8573488.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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N2 - This paper investigates the feasibility of wideband low-noise amplifiers in bipolar silicon-germanium IC technology. Three different design techniques are compared and the most promising one is analyzed in detail and examined on a design example. We propose a design approach based on an LC-ladder structure as the input matching network. Used in combination with the cascode structure amplifier with inductive degeneration, the dual-LC tank employs two resonant tanks so as to achieve wideband input power matching and noise matching simultaneously. Following the design procedure described in the paper, a 20-40 GHz low noise amplifier is designed and the simulation results are provided to verify the proposed approach.

AB - This paper investigates the feasibility of wideband low-noise amplifiers in bipolar silicon-germanium IC technology. Three different design techniques are compared and the most promising one is analyzed in detail and examined on a design example. We propose a design approach based on an LC-ladder structure as the input matching network. Used in combination with the cascode structure amplifier with inductive degeneration, the dual-LC tank employs two resonant tanks so as to achieve wideband input power matching and noise matching simultaneously. Following the design procedure described in the paper, a 20-40 GHz low noise amplifier is designed and the simulation results are provided to verify the proposed approach.

KW - bipolar integrated circuits

KW - CMOS analogue integrated circuits

KW - Ge-Si alloys

KW - integrated circuit design

KW - ladder networks

KW - LC circuits

KW - low noise amplifiers

KW - microwave amplifiers

KW - microwave integrated circuits

KW - millimetre wave amplifiers

KW - millimetre wave integrated circuits

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KW - wideband amplifiers

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KW - cascode structure amplifier

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KW - resonant tanks

KW - wideband input power matching

KW - noise matching

KW - design procedure

KW - design techniques

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KW - inductive degeneration

KW - frequency 20.0 GHz to 40.0 GHz

KW - SiGe

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KW - Impedance matching

KW - Gain

KW - Inductors

KW - Resonant frequency

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PB - Institute of Electrical and Electronics Engineers

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ER -

Chen Z, Gao H, Baltus PGM. A design approach for SiGe low-noise amplifiers using wideband input matching. In 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC). Piscataway: Institute of Electrical and Electronics Engineers. 2018. 8573488. Available from, DOI: 10.1109/NORCHIP.2018.8573488