A design approach for SiGe low-noise amplifiers using wideband input matching

Z. Chen; H. Gao; P.G.M. Baltus

doi:10.1109/NORCHIP.2018.8573488

A design approach for SiGe low-noise amplifiers using wideband input matching

Z. Chen, H. Gao, P.G.M. Baltus

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

1 Downloads (Pure)

Abstract

This paper investigates the feasibility of wideband low-noise amplifiers in bipolar silicon-germanium IC technology. Three different design techniques are compared and the most promising one is analyzed in detail and examined on a design example. We propose a design approach based on an LC-ladder structure as the input matching network. Used in combination with the cascode structure amplifier with inductive degeneration, the dual-LC tank employs two resonant tanks so as to achieve wideband input power matching and noise matching simultaneously. Following the design procedure described in the paper, a 20-40 GHz low noise amplifier is designed and the simulation results are provided to verify the proposed approach.

Original language	English
Title of host publication	2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)
Editors	Jari Nurmi, Peeter Ellervee, Juri Mihhailov, Kalle Tammemae, Maksim Jenihhin
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	4
ISBN (Electronic)	978-1-5386-7656-1
DOIs	https://doi.org/10.1109/NORCHIP.2018.8573488
Publication status	Published - 11 Dec 2018

Keywords

bipolar integrated circuits
CMOS analogue integrated circuits
Ge-Si alloys
integrated circuit design
ladder networks
LC circuits
low noise amplifiers
microwave amplifiers
microwave integrated circuits
millimetre wave amplifiers
millimetre wave integrated circuits
semiconductor materials
wideband amplifiers
bipolar silicon-germanium IC technology
LC-ladder structure
input matching network
cascode structure amplifier
dual-LC tank
resonant tanks
wideband input power matching
noise matching
design procedure
design techniques
wideband low noise amplifier
inductive degeneration
frequency 20.0 GHz to 40.0 GHz
SiGe
Wideband
Impedance matching
Gain
Inductors
Resonant frequency
Transistors
low noise amplifier (LNA)
wideband Matching
LC ladder
silicon-germanium (SiGe)
Silicon-germanium (SiGe)
Wideband Matching

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10.1109/NORCHIP.2018.8573488

Cite this

Chen, Z., Gao, H., & Baltus, P. G. M. (2018). A design approach for SiGe low-noise amplifiers using wideband input matching. In J. Nurmi, P. Ellervee, J. Mihhailov, K. Tammemae, & M. Jenihhin (Eds.), 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC) [8573488] Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/NORCHIP.2018.8573488

Chen, Z. ; Gao, H. ; Baltus, P.G.M. / A design approach for SiGe low-noise amplifiers using wideband input matching. 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC). editor / Jari Nurmi ; Peeter Ellervee ; Juri Mihhailov ; Kalle Tammemae ; Maksim Jenihhin. Piscataway : Institute of Electrical and Electronics Engineers, 2018.

@inproceedings{92fc0b95484443b49286b2d6bb209618,

title = "A design approach for SiGe low-noise amplifiers using wideband input matching",

abstract = "This paper investigates the feasibility of wideband low-noise amplifiers in bipolar silicon-germanium IC technology. Three different design techniques are compared and the most promising one is analyzed in detail and examined on a design example. We propose a design approach based on an LC-ladder structure as the input matching network. Used in combination with the cascode structure amplifier with inductive degeneration, the dual-LC tank employs two resonant tanks so as to achieve wideband input power matching and noise matching simultaneously. Following the design procedure described in the paper, a 20-40 GHz low noise amplifier is designed and the simulation results are provided to verify the proposed approach.",

keywords = "bipolar integrated circuits, CMOS analogue integrated circuits, Ge-Si alloys, integrated circuit design, ladder networks, LC circuits, low noise amplifiers, microwave amplifiers, microwave integrated circuits, millimetre wave amplifiers, millimetre wave integrated circuits, semiconductor materials, wideband amplifiers, bipolar silicon-germanium IC technology, LC-ladder structure, input matching network, cascode structure amplifier, dual-LC tank, resonant tanks, wideband input power matching, noise matching, design procedure, design techniques, wideband low noise amplifier, inductive degeneration, frequency 20.0 GHz to 40.0 GHz, SiGe, Wideband, Impedance matching, Gain, Inductors, Resonant frequency, Transistors, low noise amplifier (LNA), wideband Matching, LC ladder, silicon-germanium (SiGe), Silicon-germanium (SiGe), Wideband Matching",

author = "Z. Chen and H. Gao and P.G.M. Baltus",

year = "2018",

month = dec,

day = "11",

doi = "10.1109/NORCHIP.2018.8573488",

language = "English",

editor = "Jari Nurmi and Peeter Ellervee and Juri Mihhailov and Kalle Tammemae and Maksim Jenihhin",

booktitle = "2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

}

Chen, Z, Gao, H & Baltus, PGM 2018, A design approach for SiGe low-noise amplifiers using wideband input matching. in J Nurmi, P Ellervee, J Mihhailov, K Tammemae & M Jenihhin (eds), 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)., 8573488, Institute of Electrical and Electronics Engineers, Piscataway. https://doi.org/10.1109/NORCHIP.2018.8573488

A design approach for SiGe low-noise amplifiers using wideband input matching. / Chen, Z.; Gao, H.; Baltus, P.G.M.
2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC). ed. / Jari Nurmi; Peeter Ellervee; Juri Mihhailov; Kalle Tammemae; Maksim Jenihhin. Piscataway: Institute of Electrical and Electronics Engineers, 2018. 8573488.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - A design approach for SiGe low-noise amplifiers using wideband input matching

AU - Chen, Z.

AU - Gao, H.

AU - Baltus, P.G.M.

PY - 2018/12/11

Y1 - 2018/12/11

N2 - This paper investigates the feasibility of wideband low-noise amplifiers in bipolar silicon-germanium IC technology. Three different design techniques are compared and the most promising one is analyzed in detail and examined on a design example. We propose a design approach based on an LC-ladder structure as the input matching network. Used in combination with the cascode structure amplifier with inductive degeneration, the dual-LC tank employs two resonant tanks so as to achieve wideband input power matching and noise matching simultaneously. Following the design procedure described in the paper, a 20-40 GHz low noise amplifier is designed and the simulation results are provided to verify the proposed approach.

AB - This paper investigates the feasibility of wideband low-noise amplifiers in bipolar silicon-germanium IC technology. Three different design techniques are compared and the most promising one is analyzed in detail and examined on a design example. We propose a design approach based on an LC-ladder structure as the input matching network. Used in combination with the cascode structure amplifier with inductive degeneration, the dual-LC tank employs two resonant tanks so as to achieve wideband input power matching and noise matching simultaneously. Following the design procedure described in the paper, a 20-40 GHz low noise amplifier is designed and the simulation results are provided to verify the proposed approach.

KW - bipolar integrated circuits

KW - CMOS analogue integrated circuits

KW - Ge-Si alloys

KW - integrated circuit design

KW - ladder networks

KW - LC circuits

KW - low noise amplifiers

KW - microwave amplifiers

KW - microwave integrated circuits

KW - millimetre wave amplifiers

KW - millimetre wave integrated circuits

KW - semiconductor materials

KW - wideband amplifiers

KW - bipolar silicon-germanium IC technology

KW - LC-ladder structure

KW - input matching network

KW - cascode structure amplifier

KW - dual-LC tank

KW - resonant tanks

KW - wideband input power matching

KW - noise matching

KW - design procedure

KW - design techniques

KW - wideband low noise amplifier

KW - inductive degeneration

KW - frequency 20.0 GHz to 40.0 GHz

KW - SiGe

KW - Wideband

KW - Impedance matching

KW - Gain

KW - Inductors

KW - Resonant frequency

KW - Transistors

KW - low noise amplifier (LNA)

KW - wideband Matching

KW - LC ladder

KW - silicon-germanium (SiGe)

KW - Silicon-germanium (SiGe)

KW - Wideband Matching

UR - http://www.scopus.com/inward/record.url?scp=85060575488&partnerID=8YFLogxK

U2 - 10.1109/NORCHIP.2018.8573488

DO - 10.1109/NORCHIP.2018.8573488

M3 - Conference contribution

BT - 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)

A2 - Nurmi, Jari

A2 - Ellervee, Peeter

A2 - Mihhailov, Juri

A2 - Tammemae, Kalle

A2 - Jenihhin, Maksim

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

ER -

Chen Z, Gao H , Baltus PGM. A design approach for SiGe low-noise amplifiers using wideband input matching. In Nurmi J, Ellervee P, Mihhailov J, Tammemae K, Jenihhin M, editors, 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC). Piscataway: Institute of Electrical and Electronics Engineers. 2018. 8573488 doi: 10.1109/NORCHIP.2018.8573488

A design approach for SiGe low-noise amplifiers using wideband input matching

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