A design approach for SiGe low-noise amplifiers using wideband input matching

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Abstract

This paper investigates the feasibility of wideband low-noise amplifiers in bipolar silicon-germanium IC technology. Three different design techniques are compared and the most promising one is analyzed in detail and examined on a design example. We propose a design approach based on an LC-ladder structure as the input matching network. Used in combination with the cascode structure amplifier with inductive degeneration, the dual-LC tank employs two resonant tanks so as to achieve wideband input power matching and noise matching simultaneously. Following the design procedure described in the paper, a 20-40 GHz low noise amplifier is designed and the simulation results are provided to verify the proposed approach.
Original languageEnglish
Title of host publication2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)
EditorsJari Nurmi, Peeter Ellervee, Juri Mihhailov, Kalle Tammemae, Maksim Jenihhin
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Number of pages4
ISBN (Electronic)978-1-5386-7656-1
DOIs
Publication statusPublished - 11 Dec 2018

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Keywords

  • bipolar integrated circuits
  • CMOS analogue integrated circuits
  • Ge-Si alloys
  • integrated circuit design
  • ladder networks
  • LC circuits
  • low noise amplifiers
  • microwave amplifiers
  • microwave integrated circuits
  • millimetre wave amplifiers
  • millimetre wave integrated circuits
  • semiconductor materials
  • wideband amplifiers
  • bipolar silicon-germanium IC technology
  • LC-ladder structure
  • input matching network
  • cascode structure amplifier
  • dual-LC tank
  • resonant tanks
  • wideband input power matching
  • noise matching
  • design procedure
  • design techniques
  • wideband low noise amplifier
  • inductive degeneration
  • frequency 20.0 GHz to 40.0 GHz
  • SiGe
  • Wideband
  • Impedance matching
  • Gain
  • Inductors
  • Resonant frequency
  • Transistors
  • low noise amplifier (LNA)
  • wideband Matching
  • LC ladder
  • silicon-germanium (SiGe)
  • Silicon-germanium (SiGe)
  • Wideband Matching

Cite this

Chen, Z., Gao, H., & Baltus, P. G. M. (2018). A design approach for SiGe low-noise amplifiers using wideband input matching. In J. Nurmi, P. Ellervee, J. Mihhailov, K. Tammemae, & M. Jenihhin (Eds.), 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC) [8573488] Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/NORCHIP.2018.8573488