Abstract
This paper presents a low-power high-efficiency linear driver for optical modulators in a 0.25-m SiGe: C BiCMOS technology. The driver features a small-signal gain of 18 dB and a 3-dB bandwidth of 40 GHz and delivers a maximum output amplitude of 4 Vpp to a 100 differential load. With the inductor-peaking method, this driver achieves 34 ps ± 3 ps group delay from DC to 50 GHz. For time-domain measurement, this driver achieves a symbol rate of 56 Gb/s NRZ and 28.05 Gbaud PAM4 limited by measurement platform limitations while it has potential to achieve 50 Gbaud PAM4 from design analysis and S-parameter measurement. The bandwidth/fT ratio is 22.2%, the power efficiency is 4%, and the power consumption is 499 mW which is 40% lower than the state-of-the-art.
Original language | English |
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Title of host publication | 2018 Asia-Pacific Microwave Conference, APMC 2018 |
Place of Publication | Piscataway |
Publisher | Institute of Electrical and Electronics Engineers |
Pages | 1519-1521 |
Number of pages | 3 |
ISBN (Electronic) | 978-4-9023-3945-1 |
DOIs | |
Publication status | Published - 16 Jan 2019 |
Event | 2018 Asia-Pacific Microwave Conference, APMC 2018 - Kyoto, Japan Duration: 6 Nov 2018 → 9 Nov 2018 Conference number: 30 |
Conference
Conference | 2018 Asia-Pacific Microwave Conference, APMC 2018 |
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Country/Territory | Japan |
City | Kyoto |
Period | 6/11/18 → 9/11/18 |
Keywords
- BiCMOS
- Distributed amplifiers
- Driver amplifiers
- Inductor peaking
- Optical communication