A DC-51.5 GHz electro-absorption modulator driver with tunable differential DC coupling for 3D wafer scale packaging

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Abstract

This paper presents a DC-51.5 GHz PAM-4 dual-channel electro-absorption modulator (EAM) driver realized in a 0.25-μm SiGe:C BiCMOS technology. The EAM driver is designed for 3D wafer scale packaging which integrates silicon electronics IC and InP photonics IC at wafer scale. A new asymmetric-load differential driver topology is proposed to achieve a tunable DC biasing for the EAM without extra off-chip bias-T, which significantly reduces the packaging complexity and cost. Moreover, the driver uses differential outputs to drive a single-ended EAM, which reduces the voltage swing by a factor two and reduces the power consumption. The driver has 9.4 dB gain with a 3 dB bandwidth of 51.5 GHz and -0.2 ~ -2 V tunable output DC biasing range. It delivers a differential output voltage swing of 2 Vppd at 56 Gb/s PAM-4 and consumes 219 mW per channel, resulting in a figure of merit of 3.9 pJ/bit.

Original languageEnglish
Title of host publication2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Number of pages4
ISBN (Electronic)9781728105864
DOIs
Publication statusPublished - Nov 2019
Event2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019 - Nashville, United States
Duration: 3 Nov 20196 Nov 2019

Conference

Conference2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019
CountryUnited States
CityNashville
Period3/11/196/11/19

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  • Cite this

    Zhang, X., Liu, X., Spiegelberg, M., Van Dommele, A. R., & Matters-Kammerer, M. K. (2019). A DC-51.5 GHz electro-absorption modulator driver with tunable differential DC coupling for 3D wafer scale packaging. In 2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019 [8972717] Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/BCICTS45179.2019.8972717