A DC-51.5 GHz electro-absorption modulator driver with tunable differential DC coupling for 3D wafer scale packaging

Xi Zhang; Xiao Liu; Marc Spiegelberg; A. Rainier Van Dommele; Marion K. Matters-Kammerer

doi:10.1109/BCICTS45179.2019.8972717

A DC-51.5 GHz electro-absorption modulator driver with tunable differential DC coupling for 3D wafer scale packaging

Xi Zhang, Xiao Liu, Marc Spiegelberg, A. Rainier Van Dommele, Marion K. Matters-Kammerer

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

6 Citations (SciVal)

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Abstract

This paper presents a DC-51.5 GHz PAM-4 dual-channel electro-absorption modulator (EAM) driver realized in a 0.25-μm SiGe:C BiCMOS technology. The EAM driver is designed for 3D wafer scale packaging which integrates silicon electronics IC and InP photonics IC at wafer scale. A new asymmetric-load differential driver topology is proposed to achieve a tunable DC biasing for the EAM without extra off-chip bias-T, which significantly reduces the packaging complexity and cost. Moreover, the driver uses differential outputs to drive a single-ended EAM, which reduces the voltage swing by a factor two and reduces the power consumption. The driver has 9.4 dB gain with a 3 dB bandwidth of 51.5 GHz and -0.2 ~ -2 V tunable output DC biasing range. It delivers a differential output voltage swing of 2 V_ppd at 56 Gb/s PAM-4 and consumes 219 mW per channel, resulting in a figure of merit of 3.9 pJ/bit.

Original language	English
Title of host publication	2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	4
ISBN (Electronic)	9781728105864
DOIs	https://doi.org/10.1109/BCICTS45179.2019.8972717
Publication status	Published - Nov 2019
Event	2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019 - Nashville, United States Duration: 3 Nov 2019 → 6 Nov 2019

Conference

Conference	2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019
Country/Territory	United States
City	Nashville
Period	3/11/19 → 6/11/19

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10.1109/BCICTS45179.2019.8972717

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Zhang, X., Liu, X., Spiegelberg, M., Van Dommele, A. R., & Matters-Kammerer, M. K. (2019). A DC-51.5 GHz electro-absorption modulator driver with tunable differential DC coupling for 3D wafer scale packaging. In 2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019 [8972717] Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/BCICTS45179.2019.8972717

@inproceedings{addb1db16e404c71aa26d47be0c12c86,

title = "A DC-51.5 GHz electro-absorption modulator driver with tunable differential DC coupling for 3D wafer scale packaging",

abstract = "This paper presents a DC-51.5 GHz PAM-4 dual-channel electro-absorption modulator (EAM) driver realized in a 0.25-μm SiGe:C BiCMOS technology. The EAM driver is designed for 3D wafer scale packaging which integrates silicon electronics IC and InP photonics IC at wafer scale. A new asymmetric-load differential driver topology is proposed to achieve a tunable DC biasing for the EAM without extra off-chip bias-T, which significantly reduces the packaging complexity and cost. Moreover, the driver uses differential outputs to drive a single-ended EAM, which reduces the voltage swing by a factor two and reduces the power consumption. The driver has 9.4 dB gain with a 3 dB bandwidth of 51.5 GHz and -0.2 ~ -2 V tunable output DC biasing range. It delivers a differential output voltage swing of 2 Vppd at 56 Gb/s PAM-4 and consumes 219 mW per channel, resulting in a figure of merit of 3.9 pJ/bit.",

author = "Xi Zhang and Xiao Liu and Marc Spiegelberg and {Van Dommele}, {A. Rainier} and Matters-Kammerer, {Marion K.}",

year = "2019",

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doi = "10.1109/BCICTS45179.2019.8972717",

language = "English",

booktitle = "2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019",

publisher = "Institute of Electrical and Electronics Engineers",

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note = "2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019 ; Conference date: 03-11-2019 Through 06-11-2019",

}

Zhang, X, Liu, X, Spiegelberg, M , Van Dommele, AR & Matters-Kammerer, MK 2019, A DC-51.5 GHz electro-absorption modulator driver with tunable differential DC coupling for 3D wafer scale packaging. in 2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019., 8972717, Institute of Electrical and Electronics Engineers, Piscataway, 2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019, Nashville, United States, 3/11/19. https://doi.org/10.1109/BCICTS45179.2019.8972717

A DC-51.5 GHz electro-absorption modulator driver with tunable differential DC coupling for 3D wafer scale packaging. / Zhang, Xi; Liu, Xiao; Spiegelberg, Marc et al.

2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019. Piscataway : Institute of Electrical and Electronics Engineers, 2019. 8972717.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - A DC-51.5 GHz electro-absorption modulator driver with tunable differential DC coupling for 3D wafer scale packaging

AU - Zhang, Xi

AU - Liu, Xiao

AU - Spiegelberg, Marc

AU - Van Dommele, A. Rainier

AU - Matters-Kammerer, Marion K.

PY - 2019/11

Y1 - 2019/11

N2 - This paper presents a DC-51.5 GHz PAM-4 dual-channel electro-absorption modulator (EAM) driver realized in a 0.25-μm SiGe:C BiCMOS technology. The EAM driver is designed for 3D wafer scale packaging which integrates silicon electronics IC and InP photonics IC at wafer scale. A new asymmetric-load differential driver topology is proposed to achieve a tunable DC biasing for the EAM without extra off-chip bias-T, which significantly reduces the packaging complexity and cost. Moreover, the driver uses differential outputs to drive a single-ended EAM, which reduces the voltage swing by a factor two and reduces the power consumption. The driver has 9.4 dB gain with a 3 dB bandwidth of 51.5 GHz and -0.2 ~ -2 V tunable output DC biasing range. It delivers a differential output voltage swing of 2 Vppd at 56 Gb/s PAM-4 and consumes 219 mW per channel, resulting in a figure of merit of 3.9 pJ/bit.

AB - This paper presents a DC-51.5 GHz PAM-4 dual-channel electro-absorption modulator (EAM) driver realized in a 0.25-μm SiGe:C BiCMOS technology. The EAM driver is designed for 3D wafer scale packaging which integrates silicon electronics IC and InP photonics IC at wafer scale. A new asymmetric-load differential driver topology is proposed to achieve a tunable DC biasing for the EAM without extra off-chip bias-T, which significantly reduces the packaging complexity and cost. Moreover, the driver uses differential outputs to drive a single-ended EAM, which reduces the voltage swing by a factor two and reduces the power consumption. The driver has 9.4 dB gain with a 3 dB bandwidth of 51.5 GHz and -0.2 ~ -2 V tunable output DC biasing range. It delivers a differential output voltage swing of 2 Vppd at 56 Gb/s PAM-4 and consumes 219 mW per channel, resulting in a figure of merit of 3.9 pJ/bit.

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DO - 10.1109/BCICTS45179.2019.8972717

M3 - Conference contribution

BT - 2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019

Y2 - 3 November 2019 through 6 November 2019

ER -

Zhang X, Liu X, Spiegelberg M , Van Dommele AR , Matters-Kammerer MK. A DC-51.5 GHz electro-absorption modulator driver with tunable differential DC coupling for 3D wafer scale packaging. In 2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019. Piscataway: Institute of Electrical and Electronics Engineers. 2019. 8972717 doi: 10.1109/BCICTS45179.2019.8972717

A DC-51.5 GHz electro-absorption modulator driver with tunable differential DC coupling for 3D wafer scale packaging

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