A Comparison of Tunnel Diode and Schottky Diode in Rectifier at 2.4 GHz for Low Input Power Region

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Abstract

This paper presents a comparison of tunnel diode to Schottky diode in rectifier at 2.4 GHz under -10dBm input power region. The tunnel diode based rectifier has an advantage of quantum tunneling effect. Therefore it can achieve higher rectification efficiencies. In this work, GI401A tunnel diode and HSMS-285B Schottky diode are used. The input power range of measurements are from -10dBm to - 40dBm. In the same topology, same material, and the same input power situation, the tunnel diode based rectifier achieves 12.6% efficiency, while the Schottky diode based rectifier achieves 6.53% efficiency.

Original languageEnglish
Title of host publication2019 IEEE Wireless Power Transfer Conference, WPTC 2019
PublisherInstitute of Electrical and Electronics Engineers
Pages274-277
Number of pages4
ISBN (Electronic)9781728107059
DOIs
Publication statusPublished - Jun 2019
Event2019 IEEE Wireless Power Transfer Conference, WPTC 2019 - London, United Kingdom
Duration: 18 Jun 201921 Jun 2019

Conference

Conference2019 IEEE Wireless Power Transfer Conference, WPTC 2019
CountryUnited Kingdom
CityLondon
Period18/06/1921/06/19

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    Manev, V., Visser, H., Baltus, P., & Gao, H. (2019). A Comparison of Tunnel Diode and Schottky Diode in Rectifier at 2.4 GHz for Low Input Power Region. In 2019 IEEE Wireless Power Transfer Conference, WPTC 2019 (pp. 274-277). [9055615] Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/WPTC45513.2019.9055615