A common gate thin film transistor on poly(ethylene naphthalate) foil using step-and-flash imprint lithography

P.F. Moonen, B. Vratzov, W.T.T. Smaal, G.H. Gelinck, M. Péter, E.R. Meinders, J. Huskens

Research output: Contribution to journalArticleAcademicpeer-review

12 Citations (Scopus)

Abstract

In this paper the fabrication of flexible thin film transistors (TFTs) on poly(ethylene naphthalate) foil is reported, with the source-drain layer patterned by step-and-flash imprint lithography (SFIL) as a first step towards fully UV-imprinted TFTs. The semiconductor was deposited by inkjet printing of a blend of TIPS-pentacene/polystyrene. The bottom contact, bottom gate TFTs were fabricated with the foil reversibly glued to a carrier, enhancing the dimensional stability and flatness of the foil to result in a thinner and more homogeneously distributed residual layer thickness. The obtained performance of the TFT devices, showing a mobility of μ = 0.56 cm2 V-1 s-1 with an on/off ratio of >107 and near-zero threshold voltage, was found to be in good agreement with similar, photolithographically patterned state-of-the-art devices recently reported in literature. The results presented here show the feasibility of SFIL as a roll-to-roll compatible and down scalable patterning technique on flexible PEN foil for the fabrication of bottom-gate, bottom-contact flexible high-quality TFTs.

Original languageEnglish
Pages (from-to)2207-2214
Number of pages8
JournalOrganic Electronics
Volume12
Issue number12
DOIs
Publication statusPublished - 1 Dec 2011

Keywords

  • Flexible thin film transistor
  • Foil-on-carrier
  • Step-and-flash imprint lithography

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