A 96 % efficient high-frequency DC-DC converter using E-mode GaN DHFETs on Si

J. Das; J. Everts; J. Van den Keybus; M. Van Hove; D. Visalli; P. Srivastava; D. Marcon; K. Cheng; M. Leys; S. Decoutere; Johan Driesen; G. Borghs

doi:10.1109/LED.2011.2162393

A 96 % efficient high-frequency DC-DC converter using E-mode GaN DHFETs on Si

J. Das, J. Everts, J. Van den Keybus, M. Van Hove, D. Visalli, P. Srivastava, D. Marcon, K. Cheng, M. Leys, S. Decoutere, Johan Driesen, G. Borghs

Research output: Contribution to journal › Article › Academic › peer-review

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Original language	English
Pages (from-to)	1370-1372
Number of pages	2
Journal	IEEE Electron Device Letters
Volume	32
Issue number	10
DOIs	https://doi.org/10.1109/LED.2011.2162393
Publication status	Published - 2011

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10.1109/LED.2011.2162393

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Cite this

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title = "A 96 % efficient high-frequency DC-DC converter using E-mode GaN DHFETs on Si",

author = "J. Das and J. Everts and {Van den Keybus}, J. and {Van Hove}, M. and D. Visalli and P. Srivastava and D. Marcon and K. Cheng and M. Leys and S. Decoutere and Johan Driesen and G. Borghs",

year = "2011",

doi = "10.1109/LED.2011.2162393",

language = "English",

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T1 - A 96 % efficient high-frequency DC-DC converter using E-mode GaN DHFETs on Si

AU - Das, J.

AU - Everts, J.

AU - Van den Keybus, J.

AU - Van Hove, M.

AU - Visalli, D.

AU - Srivastava, P.

AU - Marcon, D.

AU - Cheng, K.

AU - Leys, M.

AU - Decoutere, S.

AU - Driesen, Johan

AU - Borghs, G.

PY - 2011

Y1 - 2011

U2 - 10.1109/LED.2011.2162393

DO - 10.1109/LED.2011.2162393

M3 - Article

SN - 0741-3106

VL - 32

SP - 1370

EP - 1372

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

ER -