A 73 to 83 GHz, 9-mW injection-locked oscilator in 65-nm CMOS technology

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Abstract

A 73 to 83 GHz injection-locked oscillator (IJLO) is realized in TSMC 65-nm CMOS technology. By using the frequency-sweeping method, a 10 GHz total locking range is achieved with -35 dBm injection power. The power consumption is 9 mW from a 1-V supply. Additional 4 mW and 6 mW are consumed for the input and output buffers respectively for the measurement purpose. The measured sensitivity of the IJLO is -60 dBm. The output power measured at the 50-Ohm load is higher than -10 dBm, and the simulated total settling time of the IJLO is less than 10 µs. The effective core area of the chip is 0.055 mm2.
Original languageEnglish
Title of host publicationIEEE proceeding of the 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 17-19 January 2011, Phoenix, Arizona USA
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages5-8
ISBN (Print)978-1-4244-8060-9
DOIs
Publication statusPublished - 2011
Event11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2011) - "Glendale Hotel & Spa", Phoenix, United States
Duration: 17 Jan 201119 Jan 2011
Conference number: 11

Conference

Conference11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2011)
Abbreviated titleSiRF 2011
CountryUnited States
CityPhoenix
Period17/01/1119/01/11

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Li, X., Baltus, P. G. M., van Zeijl, P., Milosevic, D., & Roermund, van, A. H. M. (2011). A 73 to 83 GHz, 9-mW injection-locked oscilator in 65-nm CMOS technology. In IEEE proceeding of the 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 17-19 January 2011, Phoenix, Arizona USA (pp. 5-8). Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/SIRF.2011.5719305
Li, X. ; Baltus, P.G.M. ; van Zeijl, Paul ; Milosevic, D. ; Roermund, van, A.H.M. / A 73 to 83 GHz, 9-mW injection-locked oscilator in 65-nm CMOS technology. IEEE proceeding of the 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 17-19 January 2011, Phoenix, Arizona USA. Piscataway : Institute of Electrical and Electronics Engineers, 2011. pp. 5-8
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title = "A 73 to 83 GHz, 9-mW injection-locked oscilator in 65-nm CMOS technology",
abstract = "A 73 to 83 GHz injection-locked oscillator (IJLO) is realized in TSMC 65-nm CMOS technology. By using the frequency-sweeping method, a 10 GHz total locking range is achieved with -35 dBm injection power. The power consumption is 9 mW from a 1-V supply. Additional 4 mW and 6 mW are consumed for the input and output buffers respectively for the measurement purpose. The measured sensitivity of the IJLO is -60 dBm. The output power measured at the 50-Ohm load is higher than -10 dBm, and the simulated total settling time of the IJLO is less than 10 µs. The effective core area of the chip is 0.055 mm2.",
author = "X. Li and P.G.M. Baltus and {van Zeijl}, Paul and D. Milosevic and {Roermund, van}, A.H.M.",
year = "2011",
doi = "10.1109/SIRF.2011.5719305",
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isbn = "978-1-4244-8060-9",
pages = "5--8",
booktitle = "IEEE proceeding of the 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 17-19 January 2011, Phoenix, Arizona USA",
publisher = "Institute of Electrical and Electronics Engineers",
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Li, X, Baltus, PGM, van Zeijl, P, Milosevic, D & Roermund, van, AHM 2011, A 73 to 83 GHz, 9-mW injection-locked oscilator in 65-nm CMOS technology. in IEEE proceeding of the 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 17-19 January 2011, Phoenix, Arizona USA. Institute of Electrical and Electronics Engineers, Piscataway, pp. 5-8, 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2011), Phoenix, United States, 17/01/11. https://doi.org/10.1109/SIRF.2011.5719305

A 73 to 83 GHz, 9-mW injection-locked oscilator in 65-nm CMOS technology. / Li, X.; Baltus, P.G.M.; van Zeijl, Paul; Milosevic, D.; Roermund, van, A.H.M.

IEEE proceeding of the 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 17-19 January 2011, Phoenix, Arizona USA. Piscataway : Institute of Electrical and Electronics Engineers, 2011. p. 5-8.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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T1 - A 73 to 83 GHz, 9-mW injection-locked oscilator in 65-nm CMOS technology

AU - Li, X.

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AU - Milosevic, D.

AU - Roermund, van, A.H.M.

PY - 2011

Y1 - 2011

N2 - A 73 to 83 GHz injection-locked oscillator (IJLO) is realized in TSMC 65-nm CMOS technology. By using the frequency-sweeping method, a 10 GHz total locking range is achieved with -35 dBm injection power. The power consumption is 9 mW from a 1-V supply. Additional 4 mW and 6 mW are consumed for the input and output buffers respectively for the measurement purpose. The measured sensitivity of the IJLO is -60 dBm. The output power measured at the 50-Ohm load is higher than -10 dBm, and the simulated total settling time of the IJLO is less than 10 µs. The effective core area of the chip is 0.055 mm2.

AB - A 73 to 83 GHz injection-locked oscillator (IJLO) is realized in TSMC 65-nm CMOS technology. By using the frequency-sweeping method, a 10 GHz total locking range is achieved with -35 dBm injection power. The power consumption is 9 mW from a 1-V supply. Additional 4 mW and 6 mW are consumed for the input and output buffers respectively for the measurement purpose. The measured sensitivity of the IJLO is -60 dBm. The output power measured at the 50-Ohm load is higher than -10 dBm, and the simulated total settling time of the IJLO is less than 10 µs. The effective core area of the chip is 0.055 mm2.

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DO - 10.1109/SIRF.2011.5719305

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SN - 978-1-4244-8060-9

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BT - IEEE proceeding of the 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 17-19 January 2011, Phoenix, Arizona USA

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Li X, Baltus PGM, van Zeijl P, Milosevic D, Roermund, van AHM. A 73 to 83 GHz, 9-mW injection-locked oscilator in 65-nm CMOS technology. In IEEE proceeding of the 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 17-19 January 2011, Phoenix, Arizona USA. Piscataway: Institute of Electrical and Electronics Engineers. 2011. p. 5-8 https://doi.org/10.1109/SIRF.2011.5719305