A 72% PAE, 10-watt, CMOS-LDMOS switch-mode power amplifiers for sub-1GHz application

R. Zhang; M. Acar; S.J.C.H. Theeuwen; M.P. Heijden, van der; D.M.W. Leenaerts

doi:10.1109/MWSYM.2014.6848376

A 72% PAE, 10-watt, CMOS-LDMOS switch-mode power amplifiers for sub-1GHz application

R. Zhang
, M. Acar
, S.J.C.H. Theeuwen
, M.P. Heijden, van der
, D.M.W. Leenaerts

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

3 Downloads (Pure)

Abstract

A low-cost silicon-based high efficiency CMOS-LDMOS switch-mode power amplifier (SMPA) line-up operating for sub-1GHz application is presented. The switch-mode operated LDMOS device is driven by high-speed, high voltage driver, implemented in a standard 0.14µm CMOS process technology. The CMOS driver uses high voltage extended-drain devices and delivers a 5.0VPP output voltage swing up to 1GHz. The power stage is formed by the latest LDMOS transistor designed for base station applications. The load-pull measurement results show that the proposed SMPA line-up achieves a drain efficiency (¿) >80.5% and a power-added efficiency >72.6% from 450MHz to 1000MHz with an output power Pout >10W and a power gain > 26.5dB.

Original language	English
Title of host publication	Proceedings of the International Microwave Symposium (IMS 2014) : Tampa Bay, USA, 1-6 June 2014
Pages	1307-1310
DOIs	https://doi.org/10.1109/MWSYM.2014.6848376
Publication status	Published - 2014

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@inproceedings{f5c809009e6c499bbf22ec92ea4368dd,

title = "A 72\% PAE, 10-watt, CMOS-LDMOS switch-mode power amplifiers for sub-1GHz application",

abstract = "A low-cost silicon-based high efficiency CMOS-LDMOS switch-mode power amplifier (SMPA) line-up operating for sub-1GHz application is presented. The switch-mode operated LDMOS device is driven by high-speed, high voltage driver, implemented in a standard 0.14µm CMOS process technology. The CMOS driver uses high voltage extended-drain devices and delivers a 5.0VPP output voltage swing up to 1GHz. The power stage is formed by the latest LDMOS transistor designed for base station applications. The load-pull measurement results show that the proposed SMPA line-up achieves a drain efficiency (¿) >80.5\% and a power-added efficiency >72.6\% from 450MHz to 1000MHz with an output power Pout >10W and a power gain > 26.5dB.",

author = "R. Zhang and M. Acar and S.J.C.H. Theeuwen and \{Heijden, van der\}, M.P. and D.M.W. Leenaerts",

year = "2014",

doi = "10.1109/MWSYM.2014.6848376",

language = "English",

pages = "1307--1310",

booktitle = "Proceedings of the International Microwave Symposium (IMS 2014) : Tampa Bay, USA, 1-6 June 2014",

}

TY - GEN

T1 - A 72% PAE, 10-watt, CMOS-LDMOS switch-mode power amplifiers for sub-1GHz application

AU - Zhang, R.

AU - Acar, M.

AU - Theeuwen, S.J.C.H.

AU - Heijden, van der, M.P.

AU - Leenaerts, D.M.W.

PY - 2014

Y1 - 2014

N2 - A low-cost silicon-based high efficiency CMOS-LDMOS switch-mode power amplifier (SMPA) line-up operating for sub-1GHz application is presented. The switch-mode operated LDMOS device is driven by high-speed, high voltage driver, implemented in a standard 0.14µm CMOS process technology. The CMOS driver uses high voltage extended-drain devices and delivers a 5.0VPP output voltage swing up to 1GHz. The power stage is formed by the latest LDMOS transistor designed for base station applications. The load-pull measurement results show that the proposed SMPA line-up achieves a drain efficiency (¿) >80.5% and a power-added efficiency >72.6% from 450MHz to 1000MHz with an output power Pout >10W and a power gain > 26.5dB.

AB - A low-cost silicon-based high efficiency CMOS-LDMOS switch-mode power amplifier (SMPA) line-up operating for sub-1GHz application is presented. The switch-mode operated LDMOS device is driven by high-speed, high voltage driver, implemented in a standard 0.14µm CMOS process technology. The CMOS driver uses high voltage extended-drain devices and delivers a 5.0VPP output voltage swing up to 1GHz. The power stage is formed by the latest LDMOS transistor designed for base station applications. The load-pull measurement results show that the proposed SMPA line-up achieves a drain efficiency (¿) >80.5% and a power-added efficiency >72.6% from 450MHz to 1000MHz with an output power Pout >10W and a power gain > 26.5dB.

U2 - 10.1109/MWSYM.2014.6848376

DO - 10.1109/MWSYM.2014.6848376

M3 - Conference contribution

SP - 1307

EP - 1310

BT - Proceedings of the International Microwave Symposium (IMS 2014) : Tampa Bay, USA, 1-6 June 2014

ER -

A 72% PAE, 10-watt, CMOS-LDMOS switch-mode power amplifiers for sub-1GHz application

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