TY - GEN
T1 - A 72% PAE, 10-watt, CMOS-LDMOS switch-mode power amplifiers for sub-1GHz application
AU - Zhang, R.
AU - Acar, M.
AU - Theeuwen, S.J.C.H.
AU - Heijden, van der, M.P.
AU - Leenaerts, D.M.W.
PY - 2014
Y1 - 2014
N2 - A low-cost silicon-based high efficiency CMOS-LDMOS switch-mode power amplifier (SMPA) line-up operating for sub-1GHz application is presented. The switch-mode operated LDMOS device is driven by high-speed, high voltage driver, implemented in a standard 0.14µm CMOS process technology. The CMOS driver uses high voltage extended-drain devices and delivers a 5.0VPP output voltage swing up to 1GHz. The power stage is formed by the latest LDMOS transistor designed for base station applications. The load-pull measurement results show that the proposed SMPA line-up achieves a drain efficiency (¿) >80.5% and a power-added efficiency >72.6% from 450MHz to 1000MHz with an output power Pout >10W and a power gain > 26.5dB.
AB - A low-cost silicon-based high efficiency CMOS-LDMOS switch-mode power amplifier (SMPA) line-up operating for sub-1GHz application is presented. The switch-mode operated LDMOS device is driven by high-speed, high voltage driver, implemented in a standard 0.14µm CMOS process technology. The CMOS driver uses high voltage extended-drain devices and delivers a 5.0VPP output voltage swing up to 1GHz. The power stage is formed by the latest LDMOS transistor designed for base station applications. The load-pull measurement results show that the proposed SMPA line-up achieves a drain efficiency (¿) >80.5% and a power-added efficiency >72.6% from 450MHz to 1000MHz with an output power Pout >10W and a power gain > 26.5dB.
U2 - 10.1109/MWSYM.2014.6848376
DO - 10.1109/MWSYM.2014.6848376
M3 - Conference contribution
SP - 1307
EP - 1310
BT - Proceedings of the International Microwave Symposium (IMS 2014) : Tampa Bay, USA, 1-6 June 2014
ER -