A 72% PAE, 10-watt, CMOS-LDMOS switch-mode power amplifiers for sub-1GHz application

R. Zhang, M. Acar, S.J.C.H. Theeuwen, M.P. Heijden, van der, D.M.W. Leenaerts

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)
3 Downloads (Pure)

Abstract

A low-cost silicon-based high efficiency CMOS-LDMOS switch-mode power amplifier (SMPA) line-up operating for sub-1GHz application is presented. The switch-mode operated LDMOS device is driven by high-speed, high voltage driver, implemented in a standard 0.14µm CMOS process technology. The CMOS driver uses high voltage extended-drain devices and delivers a 5.0VPP output voltage swing up to 1GHz. The power stage is formed by the latest LDMOS transistor designed for base station applications. The load-pull measurement results show that the proposed SMPA line-up achieves a drain efficiency (¿) >80.5% and a power-added efficiency >72.6% from 450MHz to 1000MHz with an output power Pout >10W and a power gain > 26.5dB.
Original languageEnglish
Title of host publicationProceedings of the International Microwave Symposium (IMS 2014) : Tampa Bay, USA, 1-6 June 2014
Pages1307-1310
DOIs
Publication statusPublished - 2014

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