A 6b 10MS/s current steering DAC manufactured with amorphous gallium-indium-zinc-oxide TFTs achieving SFDR > 30dB up to 300kHz

D. Raiteri; F. Torricelli; K. Myny; M. Nag; B. Van der Putten; E.C.P. Smits; S Steudel; K. Tempelaars; A.K. Tripathi; G.H. Gelinck; A.H.M. Roermund, van; E. Cantatore

doi:10.1109/ISSCC.2012.6177028

A 6b 10MS/s current steering DAC manufactured with amorphous gallium-indium-zinc-oxide TFTs achieving SFDR > 30dB up to 300kHz

D. Raiteri, F. Torricelli, K. Myny, M. Nag, B. Van der Putten, E.C.P. Smits, S Steudel, K. Tempelaars, A.K. Tripathi, G.H. Gelinck, A.H.M. Roermund, van, E. Cantatore

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Amorphous Gallium-lndium-Zinc-Oxide (GIZO or IGZO) has been recently pro- posed [1] as an interesting semiconductor for manufacturing TFTs because of its mobility (µ~20cm7Vs), superior to other common materials for large-area elec- tronics like organic semiconductors and a-Si (µ~1cm7Vs). The amorphous nature of GIZO grants also a good uniformity, contrary to Low Temperature Polycrystalline Silicon (LTPS), which still offers the best mobility among large- area TFT technologies (µ~100cm2¿/s). The optical transparency and the relative- ly low fabrication temperature (

Original language	English
Title of host publication	Proceedings of the IEEE International Solid-State Circuits Conference 2012 (ISSCC 2012), 19-23 February 2012, San Francisco, California
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	314-316
DOIs	https://doi.org/10.1109/ISSCC.2012.6177028
Publication status	Published - 2012
Event	59th IEEE International Solid-State Circuits Conference, ISSCC 2012 - San Francisco, United States Duration: 19 Feb 2012 → 23 Feb 2012 Conference number: 59

Conference

Conference	59th IEEE International Solid-State Circuits Conference, ISSCC 2012
Abbreviated title	ISSCC 2012
Country/Territory	United States
City	San Francisco
Period	19/02/12 → 23/02/12
Other	“Silicon Systems for Sustainability”

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Raiteri, D., Torricelli, F., Myny, K., Nag, M., Van der Putten, B., Smits, E. C. P., Steudel, S., Tempelaars, K., Tripathi, A. K., Gelinck, G. H., Roermund, van, A. H. M., & Cantatore, E. (2012). A 6b 10MS/s current steering DAC manufactured with amorphous gallium-indium-zinc-oxide TFTs achieving SFDR > 30dB up to 300kHz. In Proceedings of the IEEE International Solid-State Circuits Conference 2012 (ISSCC 2012), 19-23 February 2012, San Francisco, California (pp. 314-316). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ISSCC.2012.6177028

Raiteri, D. ; Torricelli, F. ; Myny, K. et al. / A 6b 10MS/s current steering DAC manufactured with amorphous gallium-indium-zinc-oxide TFTs achieving SFDR > 30dB up to 300kHz. Proceedings of the IEEE International Solid-State Circuits Conference 2012 (ISSCC 2012), 19-23 February 2012, San Francisco, California. Piscataway : Institute of Electrical and Electronics Engineers, 2012. pp. 314-316

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title = "A 6b 10MS/s current steering DAC manufactured with amorphous gallium-indium-zinc-oxide TFTs achieving SFDR > 30dB up to 300kHz",

abstract = "Amorphous Gallium-lndium-Zinc-Oxide (GIZO or IGZO) has been recently pro- posed [1] as an interesting semiconductor for manufacturing TFTs because of its mobility (µ\textasciitilde{}20cm7Vs), superior to other common materials for large-area elec- tronics like organic semiconductors and a-Si (µ\textasciitilde{}1cm7Vs). The amorphous nature of GIZO grants also a good uniformity, contrary to Low Temperature Polycrystalline Silicon (LTPS), which still offers the best mobility among large- area TFT technologies (µ\textasciitilde{}100cm2¿/s). The optical transparency and the relative- ly low fabrication temperature (",

author = "D. Raiteri and F. Torricelli and K. Myny and M. Nag and \{Van der Putten\}, B. and E.C.P. Smits and S Steudel and K. Tempelaars and A.K. Tripathi and G.H. Gelinck and \{Roermund, van\}, A.H.M. and E. Cantatore",

year = "2012",

doi = "10.1109/ISSCC.2012.6177028",

language = "English",

pages = "314--316",

booktitle = "Proceedings of the IEEE International Solid-State Circuits Conference 2012 (ISSCC 2012), 19-23 February 2012, San Francisco, California",

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Raiteri, D, Torricelli, F, Myny, K, Nag, M, Van der Putten, B, Smits, ECP, Steudel, S, Tempelaars, K, Tripathi, AK, Gelinck, GH, Roermund, van, AHM & Cantatore, E 2012, A 6b 10MS/s current steering DAC manufactured with amorphous gallium-indium-zinc-oxide TFTs achieving SFDR > 30dB up to 300kHz. in Proceedings of the IEEE International Solid-State Circuits Conference 2012 (ISSCC 2012), 19-23 February 2012, San Francisco, California. Institute of Electrical and Electronics Engineers, Piscataway, pp. 314-316, 59th IEEE International Solid-State Circuits Conference, ISSCC 2012, San Francisco, California, United States, 19/02/12. https://doi.org/10.1109/ISSCC.2012.6177028

A 6b 10MS/s current steering DAC manufactured with amorphous gallium-indium-zinc-oxide TFTs achieving SFDR > 30dB up to 300kHz. / Raiteri, D.; Torricelli, F.; Myny, K. et al.
Proceedings of the IEEE International Solid-State Circuits Conference 2012 (ISSCC 2012), 19-23 February 2012, San Francisco, California. Piscataway: Institute of Electrical and Electronics Engineers, 2012. p. 314-316.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Raiteri D, Torricelli F, Myny K, Nag M, Van der Putten B, Smits ECP et al. A 6b 10MS/s current steering DAC manufactured with amorphous gallium-indium-zinc-oxide TFTs achieving SFDR > 30dB up to 300kHz. In Proceedings of the IEEE International Solid-State Circuits Conference 2012 (ISSCC 2012), 19-23 February 2012, San Francisco, California. Piscataway: Institute of Electrical and Electronics Engineers. 2012. p. 314-316 doi: 10.1109/ISSCC.2012.6177028

A 6b 10MS/s current steering DAC manufactured with amorphous gallium-indium-zinc-oxide TFTs achieving SFDR > 30dB up to 300kHz

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