A 6b 10MS/s current steering DAC manufactured with amorphous gallium-indium-zinc-oxide TFTs achieving SFDR > 30dB up to 300kHz

D. Raiteri, F. Torricelli, K. Myny, M. Nag, B. Van der Putten, E.C.P. Smits, S Steudel, K. Tempelaars, A.K. Tripathi, G.H. Gelinck, A.H.M. Roermund, van, E. Cantatore

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

35 Citations (Scopus)
1 Downloads (Pure)

Abstract

Amorphous Gallium-lndium-Zinc-Oxide (GIZO or IGZO) has been recently pro- posed [1] as an interesting semiconductor for manufacturing TFTs because of its mobility (µ~20cm7Vs), superior to other common materials for large-area elec- tronics like organic semiconductors and a-Si (µ~1cm7Vs). The amorphous nature of GIZO grants also a good uniformity, contrary to Low Temperature Polycrystalline Silicon (LTPS), which still offers the best mobility among large- area TFT technologies (µ~100cm2¿/s). The optical transparency and the relative- ly low fabrication temperature (
Original languageEnglish
Title of host publicationProceedings of the IEEE International Solid-State Circuits Conference 2012 (ISSCC 2012), 19-23 February 2012, San Francisco, California
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages314-316
DOIs
Publication statusPublished - 2012
Event59th International Solid-State Circuits Conference (ISSCC 2012) - San Francisco, CA, United States
Duration: 19 Feb 201223 Feb 2012
Conference number: 59

Conference

Conference59th International Solid-State Circuits Conference (ISSCC 2012)
Abbreviated titleISSCC 2012
Country/TerritoryUnited States
CitySan Francisco, CA
Period19/02/1223/02/12
Other“Silicon Systems for Sustainability”

Fingerprint

Dive into the research topics of 'A 6b 10MS/s current steering DAC manufactured with amorphous gallium-indium-zinc-oxide TFTs achieving SFDR > 30dB up to 300kHz'. Together they form a unique fingerprint.

Cite this