A 6b 10MS/s current steering DAC manufactured with amorphous gallium-indium-zinc-oxide TFTs achieving SFDR > 30dB up to 300kHz

D. Raiteri, F. Torricelli, K. Myny, M. Nag, B. Van der Putten, E.C.P. Smits, S Steudel, K. Tempelaars, A.K. Tripathi, G.H. Gelinck, A.H.M. Roermund, van, E. Cantatore

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

33 Citations (Scopus)
1 Downloads (Pure)

Abstract

Amorphous Gallium-lndium-Zinc-Oxide (GIZO or IGZO) has been recently pro- posed [1] as an interesting semiconductor for manufacturing TFTs because of its mobility (µ~20cm7Vs), superior to other common materials for large-area elec- tronics like organic semiconductors and a-Si (µ~1cm7Vs). The amorphous nature of GIZO grants also a good uniformity, contrary to Low Temperature Polycrystalline Silicon (LTPS), which still offers the best mobility among large- area TFT technologies (µ~100cm2¿/s). The optical transparency and the relative- ly low fabrication temperature (
Original languageEnglish
Title of host publicationProceedings of the IEEE International Solid-State Circuits Conference 2012 (ISSCC 2012), 19-23 February 2012, San Francisco, California
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages314-316
DOIs
Publication statusPublished - 2012
Event59th International Solid-State Circuits Conference, ISSCC 2012 - San Francisco, CA, United States
Duration: 19 Feb 201223 Feb 2012
Conference number: 59

Conference

Conference59th International Solid-State Circuits Conference, ISSCC 2012
Abbreviated titleISSCC 2012
CountryUnited States
CitySan Francisco, CA
Period19/02/1223/02/12
Other“Silicon Systems for Sustainability”

Fingerprint Dive into the research topics of 'A 6b 10MS/s current steering DAC manufactured with amorphous gallium-indium-zinc-oxide TFTs achieving SFDR > 30dB up to 300kHz'. Together they form a unique fingerprint.

  • Cite this

    Raiteri, D., Torricelli, F., Myny, K., Nag, M., Van der Putten, B., Smits, E. C. P., Steudel, S., Tempelaars, K., Tripathi, A. K., Gelinck, G. H., Roermund, van, A. H. M., & Cantatore, E. (2012). A 6b 10MS/s current steering DAC manufactured with amorphous gallium-indium-zinc-oxide TFTs achieving SFDR > 30dB up to 300kHz. In Proceedings of the IEEE International Solid-State Circuits Conference 2012 (ISSCC 2012), 19-23 February 2012, San Francisco, California (pp. 314-316). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ISSCC.2012.6177028