A 65nm CMOS temperature-compensated mobility-based frequency reference for wireless sensor networks

L. Sebastiano, L.J. Breems, K.A.A. Makinwa, S. Drago, D.M.W. Leenaerts, B. Nauta

Research output: Contribution to journalArticleAcademicpeer-review

29 Citations (Scopus)

Abstract

For the first time, a temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55°C to 125 °C, its frequency spread is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm2 and draws 42.6 µA from a 1.2-V supply at room temperature.
Original languageEnglish
Pages (from-to)1544-1552
JournalIEEE Journal of Solid-State Circuits
Volume46
Issue number7
DOIs
Publication statusPublished - 2011

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