Abstract
For the first time, a temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55°C to 125 °C, its frequency spread is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm2 and draws 42.6 µA from a 1.2-V supply at room temperature.
Original language | English |
---|---|
Pages (from-to) | 1544-1552 |
Journal | IEEE Journal of Solid-State Circuits |
Volume | 46 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2011 |