A 65nm CMOS pulse-width-controlled driver with 8V pp output voltage for switch-mode RF PAs up to 3.6GHz

D.A. Calvillo-Cortes; M. Acar; M.P. Heijden, van der; M. Apostolidou; L.C.N. Vreede, de; D.M.W. Leenaerts

doi:10.1109/ISSCC.2011.5746218

A 65nm CMOS pulse-width-controlled driver with 8V pp output voltage for switch-mode RF PAs up to 3.6GHz

D.A. Calvillo-Cortes, M. Acar, M.P. Heijden, van der, M. Apostolidou, L.C.N. Vreede, de, D.M.W. Leenaerts

Integrated Circuits

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

23 Citations (Scopus)

Abstract

This work presented the first broadband PWM-controlled RF SMPA driver reaching 8.04Vpp up to 3.6GHz using a 1.2V baseline 65nm CMOS technology. The CMOS driver can serve as a key building block for next-generation reconfigurable multiband multimode transmitters for wireless infrastructure systems, interfacing digital CMOS circuitry with high-power transistors.

Original language	English
Title of host publication	Proceedings of the 2011 IEEE International Solid State Circuits Conference (ISSCC), 20-24 february 2011, San Francisco, California
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	58-60
ISBN (Print)	978-1-61284-303-2
DOIs	https://doi.org/10.1109/ISSCC.2011.5746218
Publication status	Published - 2011
Event	58th IEEE International Solid-State Circuits Conference (ISSCC 2011) - San Francisco, CA, United States Duration: 20 Feb 2011 → 24 Feb 2011 Conference number: 58

Conference

Conference	58th IEEE International Solid-State Circuits Conference (ISSCC 2011)
Abbreviated title	ISSCC 2011
Country/Territory	United States
City	San Francisco, CA
Period	20/02/11 → 24/02/11
Other	“Electronics for Healthy Living”

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10.1109/ISSCC.2011.5746218

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Calvillo-Cortes, D. A., Acar, M., Heijden, van der, M. P., Apostolidou, M., Vreede, de, L. C. N., & Leenaerts, D. M. W. (2011). A 65nm CMOS pulse-width-controlled driver with 8V pp output voltage for switch-mode RF PAs up to 3.6GHz. In Proceedings of the 2011 IEEE International Solid State Circuits Conference (ISSCC), 20-24 february 2011, San Francisco, California (pp. 58-60). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ISSCC.2011.5746218

Calvillo-Cortes, D.A. ; Acar, M. ; Heijden, van der, M.P. ; Apostolidou, M. ; Vreede, de, L.C.N. ; Leenaerts, D.M.W. / A 65nm CMOS pulse-width-controlled driver with 8V pp output voltage for switch-mode RF PAs up to 3.6GHz. Proceedings of the 2011 IEEE International Solid State Circuits Conference (ISSCC), 20-24 february 2011, San Francisco, California. Piscataway : Institute of Electrical and Electronics Engineers, 2011. pp. 58-60

@inproceedings{d9d610db4b8d4cb7b55c3ad1ef0dfa90,

title = "A 65nm CMOS pulse-width-controlled driver with 8V pp output voltage for switch-mode RF PAs up to 3.6GHz",

abstract = "This work presented the first broadband PWM-controlled RF SMPA driver reaching 8.04Vpp up to 3.6GHz using a 1.2V baseline 65nm CMOS technology. The CMOS driver can serve as a key building block for next-generation reconfigurable multiband multimode transmitters for wireless infrastructure systems, interfacing digital CMOS circuitry with high-power transistors.",

author = "D.A. Calvillo-Cortes and M. Acar and {Heijden, van der}, M.P. and M. Apostolidou and {Vreede, de}, L.C.N. and D.M.W. Leenaerts",

year = "2011",

doi = "10.1109/ISSCC.2011.5746218",

language = "English",

isbn = "978-1-61284-303-2",

pages = "58--60",

booktitle = "Proceedings of the 2011 IEEE International Solid State Circuits Conference (ISSCC), 20-24 february 2011, San Francisco, California",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "58th IEEE International Solid-State Circuits Conference (ISSCC 2011), ISSCC 2011 ; Conference date: 20-02-2011 Through 24-02-2011",

}

Calvillo-Cortes, DA, Acar, M, Heijden, van der, MP, Apostolidou, M, Vreede, de, LCN & Leenaerts, DMW 2011, A 65nm CMOS pulse-width-controlled driver with 8V pp output voltage for switch-mode RF PAs up to 3.6GHz. in Proceedings of the 2011 IEEE International Solid State Circuits Conference (ISSCC), 20-24 february 2011, San Francisco, California. Institute of Electrical and Electronics Engineers, Piscataway, pp. 58-60, 58th IEEE International Solid-State Circuits Conference (ISSCC 2011), San Francisco, CA, California, United States, 20/02/11. https://doi.org/10.1109/ISSCC.2011.5746218

A 65nm CMOS pulse-width-controlled driver with 8V pp output voltage for switch-mode RF PAs up to 3.6GHz. / Calvillo-Cortes, D.A.; Acar, M.; Heijden, van der, M.P.; Apostolidou, M.; Vreede, de, L.C.N.; Leenaerts, D.M.W.

Proceedings of the 2011 IEEE International Solid State Circuits Conference (ISSCC), 20-24 february 2011, San Francisco, California. Piscataway : Institute of Electrical and Electronics Engineers, 2011. p. 58-60.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Calvillo-Cortes, D.A.

AU - Acar, M.

AU - Heijden, van der, M.P.

AU - Apostolidou, M.

AU - Vreede, de, L.C.N.

AU - Leenaerts, D.M.W.

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N2 - This work presented the first broadband PWM-controlled RF SMPA driver reaching 8.04Vpp up to 3.6GHz using a 1.2V baseline 65nm CMOS technology. The CMOS driver can serve as a key building block for next-generation reconfigurable multiband multimode transmitters for wireless infrastructure systems, interfacing digital CMOS circuitry with high-power transistors.

AB - This work presented the first broadband PWM-controlled RF SMPA driver reaching 8.04Vpp up to 3.6GHz using a 1.2V baseline 65nm CMOS technology. The CMOS driver can serve as a key building block for next-generation reconfigurable multiband multimode transmitters for wireless infrastructure systems, interfacing digital CMOS circuitry with high-power transistors.

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DO - 10.1109/ISSCC.2011.5746218

M3 - Conference contribution

SN - 978-1-61284-303-2

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EP - 60

BT - Proceedings of the 2011 IEEE International Solid State Circuits Conference (ISSCC), 20-24 february 2011, San Francisco, California

PB - Institute of Electrical and Electronics Engineers

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Calvillo-Cortes DA, Acar M, Heijden, van der MP, Apostolidou M, Vreede, de LCN, Leenaerts DMW. A 65nm CMOS pulse-width-controlled driver with 8V pp output voltage for switch-mode RF PAs up to 3.6GHz. In Proceedings of the 2011 IEEE International Solid State Circuits Conference (ISSCC), 20-24 february 2011, San Francisco, California. Piscataway: Institute of Electrical and Electronics Engineers. 2011. p. 58-60 https://doi.org/10.1109/ISSCC.2011.5746218

A 65nm CMOS pulse-width-controlled driver with 8V pp output voltage for switch-mode RF PAs up to 3.6GHz

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