A 65nm CMOS pulse-width-controlled driver with 8V pp output voltage for switch-mode RF PAs up to 3.6GHz

D.A. Calvillo-Cortes, M. Acar, M.P. Heijden, van der, M. Apostolidou, L.C.N. Vreede, de, D.M.W. Leenaerts

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

23 Citations (Scopus)

Abstract

This work presented the first broadband PWM-controlled RF SMPA driver reaching 8.04Vpp up to 3.6GHz using a 1.2V baseline 65nm CMOS technology. The CMOS driver can serve as a key building block for next-generation reconfigurable multiband multimode transmitters for wireless infrastructure systems, interfacing digital CMOS circuitry with high-power transistors.
Original languageEnglish
Title of host publicationProceedings of the 2011 IEEE International Solid State Circuits Conference (ISSCC), 20-24 february 2011, San Francisco, California
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages58-60
ISBN (Print)978-1-61284-303-2
DOIs
Publication statusPublished - 2011
Event58th IEEE International Solid-State Circuits Conference (ISSCC 2011) - San Francisco, CA, United States
Duration: 20 Feb 201124 Feb 2011
Conference number: 58

Conference

Conference58th IEEE International Solid-State Circuits Conference (ISSCC 2011)
Abbreviated titleISSCC 2011
Country/TerritoryUnited States
CitySan Francisco, CA
Period20/02/1124/02/11
Other“Electronics for Healthy Living”

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