A 65-nm CMOS temperature-compensated mobility-based frequency reference for wireless sensor networks

Fabio Sebastiano; Lucien Breems; Kofi Makinwa; Salvatore Drago; Domine Leenaerts; Bram Nauta

doi:10.1109/ESSCIRC.2010.5619792

A 65-nm CMOS temperature-compensated mobility-based frequency reference for wireless sensor networks

Fabio Sebastiano, Lucien Breems, Kofi Makinwa, Salvatore Drago, Domine Leenaerts, Bram Nauta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

8 Citations (Scopus)

Abstract

For the first time, a temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55 °C to 125 °C, its frequency spread is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm² and draws 42.6 μA from a 1.2-V supply at room temperature.

Original language	English
Title of host publication	ESSCIRC 2010 - 36th European Solid State Circuits Conference
Publisher	Institute of Electrical and Electronics Engineers
Pages	102-105
Number of pages	4
ISBN (Electronic)	978-1-4244-6664-1
ISBN (Print)	978-1-4244-6662-7
DOIs	https://doi.org/10.1109/ESSCIRC.2010.5619792
Publication status	Published - 2010
Externally published	Yes
Event	36th European Solid State Circuits Conference, ESSCIRC 2010 - Sevilla, Spain Duration: 14 Sept 2010 → 16 Sept 2010

Conference

Conference	36th European Solid State Circuits Conference, ESSCIRC 2010
Country/Territory	Spain
City	Sevilla
Period	14/09/10 → 16/09/10

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10.1109/ESSCIRC.2010.5619792

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Sebastiano, F., Breems, L., Makinwa, K., Drago, S., Leenaerts, D., & Nauta, B. (2010). A 65-nm CMOS temperature-compensated mobility-based frequency reference for wireless sensor networks. In ESSCIRC 2010 - 36th European Solid State Circuits Conference (pp. 102-105). Article 5619792 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ESSCIRC.2010.5619792

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title = "A 65-nm CMOS temperature-compensated mobility-based frequency reference for wireless sensor networks",

abstract = "For the first time, a temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55 °C to 125 °C, its frequency spread is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm2 and draws 42.6 μA from a 1.2-V supply at room temperature.",

author = "Fabio Sebastiano and Lucien Breems and Kofi Makinwa and Salvatore Drago and Domine Leenaerts and Bram Nauta",

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doi = "10.1109/ESSCIRC.2010.5619792",

language = "English",

isbn = "978-1-4244-6662-7",

pages = "102--105",

booktitle = "ESSCIRC 2010 - 36th European Solid State Circuits Conference",

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note = "36th European Solid State Circuits Conference, ESSCIRC 2010 ; Conference date: 14-09-2010 Through 16-09-2010",

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Sebastiano, F, Breems, L, Makinwa, K, Drago, S, Leenaerts, D & Nauta, B 2010, A 65-nm CMOS temperature-compensated mobility-based frequency reference for wireless sensor networks. in ESSCIRC 2010 - 36th European Solid State Circuits Conference., 5619792, Institute of Electrical and Electronics Engineers, pp. 102-105, 36th European Solid State Circuits Conference, ESSCIRC 2010, Sevilla, Spain, 14/09/10. https://doi.org/10.1109/ESSCIRC.2010.5619792

A 65-nm CMOS temperature-compensated mobility-based frequency reference for wireless sensor networks. / Sebastiano, Fabio; Breems, Lucien; Makinwa, Kofi et al.
ESSCIRC 2010 - 36th European Solid State Circuits Conference. Institute of Electrical and Electronics Engineers, 2010. p. 102-105 5619792.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - A 65-nm CMOS temperature-compensated mobility-based frequency reference for wireless sensor networks

AU - Sebastiano, Fabio

AU - Breems, Lucien

AU - Makinwa, Kofi

AU - Drago, Salvatore

AU - Leenaerts, Domine

AU - Nauta, Bram

PY - 2010

Y1 - 2010

N2 - For the first time, a temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55 °C to 125 °C, its frequency spread is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm2 and draws 42.6 μA from a 1.2-V supply at room temperature.

AB - For the first time, a temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55 °C to 125 °C, its frequency spread is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm2 and draws 42.6 μA from a 1.2-V supply at room temperature.

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U2 - 10.1109/ESSCIRC.2010.5619792

DO - 10.1109/ESSCIRC.2010.5619792

M3 - Conference contribution

AN - SCOPUS:78650404755

SN - 978-1-4244-6662-7

SP - 102

EP - 105

BT - ESSCIRC 2010 - 36th European Solid State Circuits Conference

PB - Institute of Electrical and Electronics Engineers

T2 - 36th European Solid State Circuits Conference, ESSCIRC 2010

Y2 - 14 September 2010 through 16 September 2010

ER -

A 65-nm CMOS temperature-compensated mobility-based frequency reference for wireless sensor networks

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