A 60GHz Miller effect based VCO in 65nm CMOS with 10.5% tuning range

M. Lont; R. Mahmoudi; E. Heijden, van der; A.J.M. Graauw, de; P. Sakian Dezfuli; P.G.M. Baltus; A.H.M. Roermund, van

doi:10.1109/SMIC.2009.4770487

A 60GHz Miller effect based VCO in 65nm CMOS with 10.5% tuning range

M. Lont, R. Mahmoudi, E. Heijden, van der, A.J.M. Graauw, de, P. Sakian Dezfuli, P.G.M. Baltus, A.H.M. Roermund, van

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

7 Citations (Scopus)

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Abstract

This paper presents a 60 GHz voltage controlled oscillator implemented in conventional 65 nm CMOS technology. This VCO employs an alternative tuning system based on the Miller capacitance instead of conventional varactors. The presented VCO has a tuning range of 10.5 % and operates in the frequency range of 59.5 GHz to 66.1 GHz. It has an output power of -13 dBm and a phase noise of 80 dBc to -85 dBc/Hz @ 1 MHz over its entire range. The figure-of-merit (FOM) of this VCO is -162 dB.

Original language	English
Title of host publication	Proceeding of Silicon Monolithic Circuits in RF Systems (SIRF 2009). January 19-21 2009 San Diego, CA, USA
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	1-4
ISBN (Print)	978-1-4244-3940-9
DOIs	https://doi.org/10.1109/SMIC.2009.4770487
Publication status	Published - 2009

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Lont, M., Mahmoudi, R., Heijden, van der, E., Graauw, de, A. J. M., Sakian Dezfuli, P., Baltus, P. G. M., & Roermund, van, A. H. M. (2009). A 60GHz Miller effect based VCO in 65nm CMOS with 10.5% tuning range. In Proceeding of Silicon Monolithic Circuits in RF Systems (SIRF 2009). January 19-21 2009 San Diego, CA, USA (pp. 1-4). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/SMIC.2009.4770487

@inproceedings{da1ae91064fb4bf7934335aef9eca20d,

title = "A 60GHz Miller effect based VCO in 65nm CMOS with 10.5% tuning range",

abstract = "This paper presents a 60 GHz voltage controlled oscillator implemented in conventional 65 nm CMOS technology. This VCO employs an alternative tuning system based on the Miller capacitance instead of conventional varactors. The presented VCO has a tuning range of 10.5 % and operates in the frequency range of 59.5 GHz to 66.1 GHz. It has an output power of -13 dBm and a phase noise of 80 dBc to -85 dBc/Hz @ 1 MHz over its entire range. The figure-of-merit (FOM) of this VCO is -162 dB.",

author = "M. Lont and R. Mahmoudi and {Heijden, van der}, E. and {Graauw, de}, A.J.M. and {Sakian Dezfuli}, P. and P.G.M. Baltus and {Roermund, van}, A.H.M.",

year = "2009",

doi = "10.1109/SMIC.2009.4770487",

language = "English",

isbn = "978-1-4244-3940-9",

pages = "1--4",

booktitle = "Proceeding of Silicon Monolithic Circuits in RF Systems (SIRF 2009). January 19-21 2009 San Diego, CA, USA",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

}

Lont, M, Mahmoudi, R, Heijden, van der, E, Graauw, de, AJM, Sakian Dezfuli, P, Baltus, PGM & Roermund, van, AHM 2009, A 60GHz Miller effect based VCO in 65nm CMOS with 10.5% tuning range. in Proceeding of Silicon Monolithic Circuits in RF Systems (SIRF 2009). January 19-21 2009 San Diego, CA, USA. Institute of Electrical and Electronics Engineers, Piscataway, pp. 1-4. https://doi.org/10.1109/SMIC.2009.4770487

A 60GHz Miller effect based VCO in 65nm CMOS with 10.5% tuning range. / Lont, M.; Mahmoudi, R.; Heijden, van der, E. et al.
Proceeding of Silicon Monolithic Circuits in RF Systems (SIRF 2009). January 19-21 2009 San Diego, CA, USA. Piscataway: Institute of Electrical and Electronics Engineers, 2009. p. 1-4.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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N2 - This paper presents a 60 GHz voltage controlled oscillator implemented in conventional 65 nm CMOS technology. This VCO employs an alternative tuning system based on the Miller capacitance instead of conventional varactors. The presented VCO has a tuning range of 10.5 % and operates in the frequency range of 59.5 GHz to 66.1 GHz. It has an output power of -13 dBm and a phase noise of 80 dBc to -85 dBc/Hz @ 1 MHz over its entire range. The figure-of-merit (FOM) of this VCO is -162 dB.

AB - This paper presents a 60 GHz voltage controlled oscillator implemented in conventional 65 nm CMOS technology. This VCO employs an alternative tuning system based on the Miller capacitance instead of conventional varactors. The presented VCO has a tuning range of 10.5 % and operates in the frequency range of 59.5 GHz to 66.1 GHz. It has an output power of -13 dBm and a phase noise of 80 dBc to -85 dBc/Hz @ 1 MHz over its entire range. The figure-of-merit (FOM) of this VCO is -162 dB.

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M3 - Conference contribution

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BT - Proceeding of Silicon Monolithic Circuits in RF Systems (SIRF 2009). January 19-21 2009 San Diego, CA, USA

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Lont M, Mahmoudi R, Heijden, van der E, Graauw, de AJM, Sakian Dezfuli P, Baltus PGM et al. A 60GHz Miller effect based VCO in 65nm CMOS with 10.5% tuning range. In Proceeding of Silicon Monolithic Circuits in RF Systems (SIRF 2009). January 19-21 2009 San Diego, CA, USA. Piscataway: Institute of Electrical and Electronics Engineers. 2009. p. 1-4 doi: 10.1109/SMIC.2009.4770487

A 60GHz Miller effect based VCO in 65nm CMOS with 10.5% tuning range

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