A 60GHz Miller effect based VCO in 65nm CMOS with 10.5% tuning range

M. Lont, R. Mahmoudi, E. Heijden, van der, A.J.M. Graauw, de, P. Sakian Dezfuli, P.G.M. Baltus, A.H.M. Roermund, van

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Abstract

This paper presents a 60 GHz voltage controlled oscillator implemented in conventional 65 nm CMOS technology. This VCO employs an alternative tuning system based on the Miller capacitance instead of conventional varactors. The presented VCO has a tuning range of 10.5 % and operates in the frequency range of 59.5 GHz to 66.1 GHz. It has an output power of -13 dBm and a phase noise of 80 dBc to -85 dBc/Hz @ 1 MHz over its entire range. The figure-of-merit (FOM) of this VCO is -162 dB.
Original languageEnglish
Title of host publicationProceeding of Silicon Monolithic Circuits in RF Systems (SIRF 2009). January 19-21 2009 San Diego, CA, USA
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages1-4
ISBN (Print)978-1-4244-3940-9
DOIs
Publication statusPublished - 2009

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    Lont, M., Mahmoudi, R., Heijden, van der, E., Graauw, de, A. J. M., Sakian Dezfuli, P., Baltus, P. G. M., & Roermund, van, A. H. M. (2009). A 60GHz Miller effect based VCO in 65nm CMOS with 10.5% tuning range. In Proceeding of Silicon Monolithic Circuits in RF Systems (SIRF 2009). January 19-21 2009 San Diego, CA, USA (pp. 1-4). Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/SMIC.2009.4770487