A 58-64 GHz transformer-based differential rectifier in 40 nm CMOS with -12 dBm sensitivity for 1 V at 64 GHz

Research output: Chapter in Book/Report/Conference proceedingChapterAcademicpeer-review

Abstract

This paper presents a 60 GHz band transformer-based inductor peaked differential rectifier in a 40 nm CMOS technology. The rectifier is used as a wireless power receiver in a monolithic wireless powered IoT transponder. A new transformer-based inductor peaked differential topology is proposed and implemented to improve the sensitivity. In this method, the input transformer performs voltage boosting function, inductor peaking function, and impedance transfer function simultaneously within a compact die size. The proposed rectifier topology achieves an excellent peak sensitivity of -12 dBm at 64 GHz for 1 V output voltage. The overall sensitivity over the entire operational range of 58-64 GHz is below - 5 dBm.
LanguageEnglish
Title of host publication2019 IEEE MTT-S International Microwave Symposium (IMS)
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages1306-1308
Number of pages3
StatePublished - 2019
Event2019 IEEE MTT-S International Microwave Symposium - Boston, United States
Duration: 2 Jun 20197 Jun 2019

Conference

Conference2019 IEEE MTT-S International Microwave Symposium
Abbreviated titleIMS2019
CountryUnited States
CityBoston
Period2/06/197/06/19

Fingerprint

Topology
Transponders
Electric potential
Transfer functions
Internet of things

Cite this

Gao, H., Leenaerts, D., & Baltus, P. (2019). A 58-64 GHz transformer-based differential rectifier in 40 nm CMOS with -12 dBm sensitivity for 1 V at 64 GHz. In 2019 IEEE MTT-S International Microwave Symposium (IMS) (pp. 1306-1308). Piscataway: Institute of Electrical and Electronics Engineers.
Gao, Hao ; Leenaerts, Domine ; Baltus, Peter. / A 58-64 GHz transformer-based differential rectifier in 40 nm CMOS with -12 dBm sensitivity for 1 V at 64 GHz. 2019 IEEE MTT-S International Microwave Symposium (IMS). Piscataway : Institute of Electrical and Electronics Engineers, 2019. pp. 1306-1308
@inbook{af0d00d413294d558e53423ba50b43af,
title = "A 58-64 GHz transformer-based differential rectifier in 40 nm CMOS with -12 dBm sensitivity for 1 V at 64 GHz",
abstract = "This paper presents a 60 GHz band transformer-based inductor peaked differential rectifier in a 40 nm CMOS technology. The rectifier is used as a wireless power receiver in a monolithic wireless powered IoT transponder. A new transformer-based inductor peaked differential topology is proposed and implemented to improve the sensitivity. In this method, the input transformer performs voltage boosting function, inductor peaking function, and impedance transfer function simultaneously within a compact die size. The proposed rectifier topology achieves an excellent peak sensitivity of -12 dBm at 64 GHz for 1 V output voltage. The overall sensitivity over the entire operational range of 58-64 GHz is below - 5 dBm.",
author = "Hao Gao and Domine Leenaerts and Peter Baltus",
year = "2019",
language = "English",
pages = "1306--1308",
booktitle = "2019 IEEE MTT-S International Microwave Symposium (IMS)",
publisher = "Institute of Electrical and Electronics Engineers",
address = "United States",

}

Gao, H, Leenaerts, D & Baltus, P 2019, A 58-64 GHz transformer-based differential rectifier in 40 nm CMOS with -12 dBm sensitivity for 1 V at 64 GHz. in 2019 IEEE MTT-S International Microwave Symposium (IMS). Institute of Electrical and Electronics Engineers, Piscataway, pp. 1306-1308, 2019 IEEE MTT-S International Microwave Symposium , Boston, United States, 2/06/19.

A 58-64 GHz transformer-based differential rectifier in 40 nm CMOS with -12 dBm sensitivity for 1 V at 64 GHz. / Gao, Hao; Leenaerts, Domine; Baltus, Peter.

2019 IEEE MTT-S International Microwave Symposium (IMS). Piscataway : Institute of Electrical and Electronics Engineers, 2019. p. 1306-1308.

Research output: Chapter in Book/Report/Conference proceedingChapterAcademicpeer-review

TY - CHAP

T1 - A 58-64 GHz transformer-based differential rectifier in 40 nm CMOS with -12 dBm sensitivity for 1 V at 64 GHz

AU - Gao,Hao

AU - Leenaerts,Domine

AU - Baltus,Peter

PY - 2019

Y1 - 2019

N2 - This paper presents a 60 GHz band transformer-based inductor peaked differential rectifier in a 40 nm CMOS technology. The rectifier is used as a wireless power receiver in a monolithic wireless powered IoT transponder. A new transformer-based inductor peaked differential topology is proposed and implemented to improve the sensitivity. In this method, the input transformer performs voltage boosting function, inductor peaking function, and impedance transfer function simultaneously within a compact die size. The proposed rectifier topology achieves an excellent peak sensitivity of -12 dBm at 64 GHz for 1 V output voltage. The overall sensitivity over the entire operational range of 58-64 GHz is below - 5 dBm.

AB - This paper presents a 60 GHz band transformer-based inductor peaked differential rectifier in a 40 nm CMOS technology. The rectifier is used as a wireless power receiver in a monolithic wireless powered IoT transponder. A new transformer-based inductor peaked differential topology is proposed and implemented to improve the sensitivity. In this method, the input transformer performs voltage boosting function, inductor peaking function, and impedance transfer function simultaneously within a compact die size. The proposed rectifier topology achieves an excellent peak sensitivity of -12 dBm at 64 GHz for 1 V output voltage. The overall sensitivity over the entire operational range of 58-64 GHz is below - 5 dBm.

M3 - Chapter

SP - 1306

EP - 1308

BT - 2019 IEEE MTT-S International Microwave Symposium (IMS)

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

ER -

Gao H, Leenaerts D, Baltus P. A 58-64 GHz transformer-based differential rectifier in 40 nm CMOS with -12 dBm sensitivity for 1 V at 64 GHz. In 2019 IEEE MTT-S International Microwave Symposium (IMS). Piscataway: Institute of Electrical and Electronics Engineers. 2019. p. 1306-1308.