A 4.4pJ/access 80MHz, 2K word x 64b memory with write masking feature and variability resilient multi-sized sense amplifier redundancy for wireless sensor nodes applications

Vibhu Sharma; Stefan Cosemans; Maryam Ashouei; Jos Huisken; Francky Catthoor; Wim Dehaene

doi:10.1109/ESSCIRC.2010.5619717

A 4.4pJ/access 80MHz, 2K word x 64b memory with write masking feature and variability resilient multi-sized sense amplifier redundancy for wireless sensor nodes applications

Vibhu Sharma
, Stefan Cosemans
, Maryam Ashouei
, Jos Huisken
, Francky Catthoor
, Wim Dehaene

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

11 Citations (Scopus)

Abstract

A Variability resilient 128kbit 6T SRAM with energy consumption of 4.4pJ/access, operating at 80MHz for wireless sensor applications is developed in 90nm LP CMOS. The techniques developed include novelty in the local architecture with local read/write assist circuitry. VDD/2 pre-charged short local bit-lines with local sense amplifier enables charge re-cycling and gated read buffers eliminates bit-line leakage The multisized sense amplifier redundancy used for global sense amplifiers ensures variability resilient low energy consumption read operation.

Original language	English
Title of host publication	ESSCIRC 2010 - 36th European Solid State Circuits Conference
Pages	358-361
Number of pages	4
DOIs	https://doi.org/10.1109/ESSCIRC.2010.5619717
Publication status	Published - 27 Dec 2010
Externally published	Yes
Event	36th European Solid State Circuits Conference (ESSCIRC 2010) - Sevilla, Spain Duration: 14 Sept 2010 → 16 Sept 2010 Conference number: 36

Conference

Conference	36th European Solid State Circuits Conference (ESSCIRC 2010)
Abbreviated title	ESSIRC 2010
Country/Territory	Spain
City	Sevilla
Period	14/09/10 → 16/09/10

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/ESSCIRC.2010.5619717

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Sharma, V., Cosemans, S., Ashouei, M., Huisken, J., Catthoor, F., & Dehaene, W. (2010). A 4.4pJ/access 80MHz, 2K word x 64b memory with write masking feature and variability resilient multi-sized sense amplifier redundancy for wireless sensor nodes applications. In ESSCIRC 2010 - 36th European Solid State Circuits Conference (pp. 358-361). Article 5619717 https://doi.org/10.1109/ESSCIRC.2010.5619717

@inproceedings{ae04e3356c5b41b99e63eadb1610bde2,

title = "A 4.4pJ/access 80MHz, 2K word x 64b memory with write masking feature and variability resilient multi-sized sense amplifier redundancy for wireless sensor nodes applications",

abstract = "A Variability resilient 128kbit 6T SRAM with energy consumption of 4.4pJ/access, operating at 80MHz for wireless sensor applications is developed in 90nm LP CMOS. The techniques developed include novelty in the local architecture with local read/write assist circuitry. VDD/2 pre-charged short local bit-lines with local sense amplifier enables charge re-cycling and gated read buffers eliminates bit-line leakage The multisized sense amplifier redundancy used for global sense amplifiers ensures variability resilient low energy consumption read operation.",

author = "Vibhu Sharma and Stefan Cosemans and Maryam Ashouei and Jos Huisken and Francky Catthoor and Wim Dehaene",

year = "2010",

month = dec,

day = "27",

doi = "10.1109/ESSCIRC.2010.5619717",

language = "English",

isbn = "9781424466641",

pages = "358--361",

booktitle = "ESSCIRC 2010 - 36th European Solid State Circuits Conference",

note = "36th European Solid State Circuits Conference (ESSCIRC 2010), ESSIRC 2010 ; Conference date: 14-09-2010 Through 16-09-2010",

}

Sharma, V, Cosemans, S, Ashouei, M, Huisken, J, Catthoor, F & Dehaene, W 2010, A 4.4pJ/access 80MHz, 2K word x 64b memory with write masking feature and variability resilient multi-sized sense amplifier redundancy for wireless sensor nodes applications. in ESSCIRC 2010 - 36th European Solid State Circuits Conference., 5619717, pp. 358-361, 36th European Solid State Circuits Conference (ESSCIRC 2010), Sevilla, Spain, 14/09/10. https://doi.org/10.1109/ESSCIRC.2010.5619717

A 4.4pJ/access 80MHz, 2K word x 64b memory with write masking feature and variability resilient multi-sized sense amplifier redundancy for wireless sensor nodes applications. / Sharma, Vibhu; Cosemans, Stefan; Ashouei, Maryam et al.
ESSCIRC 2010 - 36th European Solid State Circuits Conference. 2010. p. 358-361 5619717.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

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AU - Sharma, Vibhu

AU - Cosemans, Stefan

AU - Ashouei, Maryam

AU - Huisken, Jos

AU - Catthoor, Francky

AU - Dehaene, Wim

N1 - Conference code: 36

PY - 2010/12/27

Y1 - 2010/12/27

N2 - A Variability resilient 128kbit 6T SRAM with energy consumption of 4.4pJ/access, operating at 80MHz for wireless sensor applications is developed in 90nm LP CMOS. The techniques developed include novelty in the local architecture with local read/write assist circuitry. VDD/2 pre-charged short local bit-lines with local sense amplifier enables charge re-cycling and gated read buffers eliminates bit-line leakage The multisized sense amplifier redundancy used for global sense amplifiers ensures variability resilient low energy consumption read operation.

AB - A Variability resilient 128kbit 6T SRAM with energy consumption of 4.4pJ/access, operating at 80MHz for wireless sensor applications is developed in 90nm LP CMOS. The techniques developed include novelty in the local architecture with local read/write assist circuitry. VDD/2 pre-charged short local bit-lines with local sense amplifier enables charge re-cycling and gated read buffers eliminates bit-line leakage The multisized sense amplifier redundancy used for global sense amplifiers ensures variability resilient low energy consumption read operation.

UR - https://www.scopus.com/pages/publications/78650314880

U2 - 10.1109/ESSCIRC.2010.5619717

DO - 10.1109/ESSCIRC.2010.5619717

M3 - Conference contribution

AN - SCOPUS:78650314880

SN - 9781424466641

SP - 358

EP - 361

BT - ESSCIRC 2010 - 36th European Solid State Circuits Conference

T2 - 36th European Solid State Circuits Conference (ESSCIRC 2010)

Y2 - 14 September 2010 through 16 September 2010

ER -

A 4.4pJ/access 80MHz, 2K word x 64b memory with write masking feature and variability resilient multi-sized sense amplifier redundancy for wireless sensor nodes applications

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UN SDGs

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