A 3.5-mW, 2.5-GHz diversity receiver and a 1.2-mW, 3.6-GHz VCO in silicon on anything

P.G.M. Baltus, A.G. Wagemans, R. Dekker, A. Hoogstraate, H. Maas, A. Tombeur, J. Sinderen, van

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26 Citations (Scopus)
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Abstract

In this paper, first results of radio-frequency (RF) circuits processed in a novel silicon bipolar technology called silicon on anything (SOA) are presented. This technology was developed with the application of low-power, high-frequency circuits in mind. Three test ICs are discussed: a fully integrated 3.6-GHz voltage-controlled oscillator, a fully integrated 2.5-GHz diversity receiver front end, and an intermediate-frequency IC containing channel selectivity and demodulation circuits. Measurement results show that using this technology, significant power savings are possible for RF circuits
Original languageEnglish
Pages (from-to)2074-2079
Number of pages6
JournalIEEE Journal of Solid-State Circuits
Volume33
Issue number12
DOIs
Publication statusPublished - 1998

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