A 3.5-mW, 2.5-GHz diversity receiver and a 1.2-mW, 3.6-GHz VCO in silicon on anything

P.G.M. Baltus; A.G. Wagemans; R. Dekker; A. Hoogstraate; H. Maas; A. Tombeur; J. Sinderen, van

doi:10.1109/4.735549

A 3.5-mW, 2.5-GHz diversity receiver and a 1.2-mW, 3.6-GHz VCO in silicon on anything

P.G.M. Baltus, A.G. Wagemans, R. Dekker, A. Hoogstraate, H. Maas, A. Tombeur, J. Sinderen, van

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

In this paper, first results of radio-frequency (RF) circuits processed in a novel silicon bipolar technology called silicon on anything (SOA) are presented. This technology was developed with the application of low-power, high-frequency circuits in mind. Three test ICs are discussed: a fully integrated 3.6-GHz voltage-controlled oscillator, a fully integrated 2.5-GHz diversity receiver front end, and an intermediate-frequency IC containing channel selectivity and demodulation circuits. Measurement results show that using this technology, significant power savings are possible for RF circuits

Original language	English
Pages (from-to)	2074-2079
Number of pages	6
Journal	IEEE Journal of Solid-State Circuits
Volume	33
Issue number	12
DOIs	https://doi.org/10.1109/4.735549
Publication status	Published - 1998

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abstract = "In this paper, first results of radio-frequency (RF) circuits processed in a novel silicon bipolar technology called silicon on anything (SOA) are presented. This technology was developed with the application of low-power, high-frequency circuits in mind. Three test ICs are discussed: a fully integrated 3.6-GHz voltage-controlled oscillator, a fully integrated 2.5-GHz diversity receiver front end, and an intermediate-frequency IC containing channel selectivity and demodulation circuits. Measurement results show that using this technology, significant power savings are possible for RF circuits",

author = "P.G.M. Baltus and A.G. Wagemans and R. Dekker and A. Hoogstraate and H. Maas and A. Tombeur and {Sinderen, van}, J.",

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AU - Baltus, P.G.M.

AU - Wagemans, A.G.

AU - Dekker, R.

AU - Hoogstraate, A.

AU - Maas, H.

AU - Tombeur, A.

AU - Sinderen, van, J.

PY - 1998

Y1 - 1998

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AB - In this paper, first results of radio-frequency (RF) circuits processed in a novel silicon bipolar technology called silicon on anything (SOA) are presented. This technology was developed with the application of low-power, high-frequency circuits in mind. Three test ICs are discussed: a fully integrated 3.6-GHz voltage-controlled oscillator, a fully integrated 2.5-GHz diversity receiver front end, and an intermediate-frequency IC containing channel selectivity and demodulation circuits. Measurement results show that using this technology, significant power savings are possible for RF circuits

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DO - 10.1109/4.735549

M3 - Article

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JF - IEEE Journal of Solid-State Circuits

IS - 12

ER -

A 3.5-mW, 2.5-GHz diversity receiver and a 1.2-mW, 3.6-GHz VCO in silicon on anything

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