A 3.5-mW, 2.5-GHz diversity receiver and a 1.2-mW, 3.6-GHz VCO in silicon on anything

P.G.M. Baltus, A.G. Wagemans, R. Dekker, A. Hoogstraate, H. Maas, A. Tombeur, J. Sinderen, van

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Abstract

In this paper, first results of radio-frequency (RF) circuits processed in a novel silicon bipolar technology called silicon on anything (SOA) are presented. This technology was developed with the application of low-power, high-frequency circuits in mind. Three test ICs are discussed: a fully integrated 3.6-GHz voltage-controlled oscillator, a fully integrated 2.5-GHz diversity receiver front end, and an intermediate-frequency IC containing channel selectivity and demodulation circuits. Measurement results show that using this technology, significant power savings are possible for RF circuits
Original languageEnglish
Pages (from-to)2074-2079
Number of pages6
JournalIEEE Journal of Solid-State Circuits
Volume33
Issue number12
DOIs
Publication statusPublished - 1998

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Variable frequency oscillators
Silicon
Networks (circuits)
Demodulation

Cite this

Baltus, P. G. M., Wagemans, A. G., Dekker, R., Hoogstraate, A., Maas, H., Tombeur, A., & Sinderen, van, J. (1998). A 3.5-mW, 2.5-GHz diversity receiver and a 1.2-mW, 3.6-GHz VCO in silicon on anything. IEEE Journal of Solid-State Circuits, 33(12), 2074-2079. https://doi.org/10.1109/4.735549
Baltus, P.G.M. ; Wagemans, A.G. ; Dekker, R. ; Hoogstraate, A. ; Maas, H. ; Tombeur, A. ; Sinderen, van, J. / A 3.5-mW, 2.5-GHz diversity receiver and a 1.2-mW, 3.6-GHz VCO in silicon on anything. In: IEEE Journal of Solid-State Circuits. 1998 ; Vol. 33, No. 12. pp. 2074-2079.
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abstract = "In this paper, first results of radio-frequency (RF) circuits processed in a novel silicon bipolar technology called silicon on anything (SOA) are presented. This technology was developed with the application of low-power, high-frequency circuits in mind. Three test ICs are discussed: a fully integrated 3.6-GHz voltage-controlled oscillator, a fully integrated 2.5-GHz diversity receiver front end, and an intermediate-frequency IC containing channel selectivity and demodulation circuits. Measurement results show that using this technology, significant power savings are possible for RF circuits",
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Baltus, PGM, Wagemans, AG, Dekker, R, Hoogstraate, A, Maas, H, Tombeur, A & Sinderen, van, J 1998, 'A 3.5-mW, 2.5-GHz diversity receiver and a 1.2-mW, 3.6-GHz VCO in silicon on anything', IEEE Journal of Solid-State Circuits, vol. 33, no. 12, pp. 2074-2079. https://doi.org/10.1109/4.735549

A 3.5-mW, 2.5-GHz diversity receiver and a 1.2-mW, 3.6-GHz VCO in silicon on anything. / Baltus, P.G.M.; Wagemans, A.G.; Dekker, R.; Hoogstraate, A.; Maas, H.; Tombeur, A.; Sinderen, van, J.

In: IEEE Journal of Solid-State Circuits, Vol. 33, No. 12, 1998, p. 2074-2079.

Research output: Contribution to journalArticleAcademicpeer-review

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T1 - A 3.5-mW, 2.5-GHz diversity receiver and a 1.2-mW, 3.6-GHz VCO in silicon on anything

AU - Baltus, P.G.M.

AU - Wagemans, A.G.

AU - Dekker, R.

AU - Hoogstraate, A.

AU - Maas, H.

AU - Tombeur, A.

AU - Sinderen, van, J.

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Y1 - 1998

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AB - In this paper, first results of radio-frequency (RF) circuits processed in a novel silicon bipolar technology called silicon on anything (SOA) are presented. This technology was developed with the application of low-power, high-frequency circuits in mind. Three test ICs are discussed: a fully integrated 3.6-GHz voltage-controlled oscillator, a fully integrated 2.5-GHz diversity receiver front end, and an intermediate-frequency IC containing channel selectivity and demodulation circuits. Measurement results show that using this technology, significant power savings are possible for RF circuits

U2 - 10.1109/4.735549

DO - 10.1109/4.735549

M3 - Article

VL - 33

SP - 2074

EP - 2079

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

SN - 0018-9200

IS - 12

ER -