A 30GHz 2dB NF low noise amplifier for Ka-band applications

Q. Ma; R. Mahmoudi; D.M.W. Leenaerts

doi:10.1109/RFIC.2012.6242224

A 30GHz 2dB NF low noise amplifier for Ka-band applications

Q. Ma, R. Mahmoudi, D.M.W. Leenaerts

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

21 Citations (Scopus)

Abstract

A 30GHz Ka-band low noise amplifier (LNA) has been realized in a 0.25µm SiGe:C BiCMOS technology. A noise figure (NF) of 1.8-2.2 dB has been measured at 26-32 GHz. The achieved 3dB-power bandwidth is larger than 7GHz, with a peak gain of 12.4dB at 29.2GHz. The input 1 dB compression point (ICP1dB) is -11dBm and input IP3 is -1.3dBm at 30GHz for a total power consumption of 98mW. The chip area including bond pads is 1mm×0.7mm.

Original language	English
Title of host publication	Proceedings of the 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 17-19 June 2012, Montreal, Quebec
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	25-28
ISBN (Print)	978-1-4673-0415-3
DOIs	https://doi.org/10.1109/RFIC.2012.6242224
Publication status	Published - 2012
Event	2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2012) - Montréal, Canada Duration: 17 Jun 2012 → 19 Jun 2012

Conference

Conference	2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2012)
Abbreviated title	RFIC 2012
Country/Territory	Canada
City	Montréal
Period	17/06/12 → 19/06/12

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10.1109/RFIC.2012.6242224

Cite this

@inproceedings{6c59e166855e4f4bb90767329b53ffe4,

title = "A 30GHz 2dB NF low noise amplifier for Ka-band applications",

abstract = "A 30GHz Ka-band low noise amplifier (LNA) has been realized in a 0.25µm SiGe:C BiCMOS technology. A noise figure (NF) of 1.8-2.2 dB has been measured at 26-32 GHz. The achieved 3dB-power bandwidth is larger than 7GHz, with a peak gain of 12.4dB at 29.2GHz. The input 1 dB compression point (ICP1dB) is -11dBm and input IP3 is -1.3dBm at 30GHz for a total power consumption of 98mW. The chip area including bond pads is 1mm×0.7mm.",

author = "Q. Ma and R. Mahmoudi and D.M.W. Leenaerts",

year = "2012",

doi = "10.1109/RFIC.2012.6242224",

language = "English",

isbn = "978-1-4673-0415-3",

pages = "25--28",

booktitle = "Proceedings of the 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 17-19 June 2012, Montreal, Quebec",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2012), RFIC 2012 ; Conference date: 17-06-2012 Through 19-06-2012",

}

Ma, Q, Mahmoudi, R & Leenaerts, DMW 2012, A 30GHz 2dB NF low noise amplifier for Ka-band applications. in Proceedings of the 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 17-19 June 2012, Montreal, Quebec. Institute of Electrical and Electronics Engineers, Piscataway, pp. 25-28, 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2012), Montréal, Canada, 17/06/12. https://doi.org/10.1109/RFIC.2012.6242224

A 30GHz 2dB NF low noise amplifier for Ka-band applications. / Ma, Q.; Mahmoudi, R.; Leenaerts, D.M.W.

Proceedings of the 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 17-19 June 2012, Montreal, Quebec. Piscataway : Institute of Electrical and Electronics Engineers, 2012. p. 25-28.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - A 30GHz 2dB NF low noise amplifier for Ka-band applications

AU - Ma, Q.

AU - Mahmoudi, R.

AU - Leenaerts, D.M.W.

PY - 2012

Y1 - 2012

N2 - A 30GHz Ka-band low noise amplifier (LNA) has been realized in a 0.25µm SiGe:C BiCMOS technology. A noise figure (NF) of 1.8-2.2 dB has been measured at 26-32 GHz. The achieved 3dB-power bandwidth is larger than 7GHz, with a peak gain of 12.4dB at 29.2GHz. The input 1 dB compression point (ICP1dB) is -11dBm and input IP3 is -1.3dBm at 30GHz for a total power consumption of 98mW. The chip area including bond pads is 1mm×0.7mm.

AB - A 30GHz Ka-band low noise amplifier (LNA) has been realized in a 0.25µm SiGe:C BiCMOS technology. A noise figure (NF) of 1.8-2.2 dB has been measured at 26-32 GHz. The achieved 3dB-power bandwidth is larger than 7GHz, with a peak gain of 12.4dB at 29.2GHz. The input 1 dB compression point (ICP1dB) is -11dBm and input IP3 is -1.3dBm at 30GHz for a total power consumption of 98mW. The chip area including bond pads is 1mm×0.7mm.

U2 - 10.1109/RFIC.2012.6242224

DO - 10.1109/RFIC.2012.6242224

M3 - Conference contribution

SN - 978-1-4673-0415-3

SP - 25

EP - 28

BT - Proceedings of the 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 17-19 June 2012, Montreal, Quebec

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2012)

Y2 - 17 June 2012 through 19 June 2012

ER -

A 30GHz 2dB NF low noise amplifier for Ka-band applications

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