A 30GHz 2dB NF low noise amplifier for Ka-band applications

Q. Ma, R. Mahmoudi, D.M.W. Leenaerts

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

18 Citations (Scopus)

Abstract

A 30GHz Ka-band low noise amplifier (LNA) has been realized in a 0.25µm SiGe:C BiCMOS technology. A noise figure (NF) of 1.8-2.2 dB has been measured at 26-32 GHz. The achieved 3dB-power bandwidth is larger than 7GHz, with a peak gain of 12.4dB at 29.2GHz. The input 1 dB compression point (ICP1dB) is -11dBm and input IP3 is -1.3dBm at 30GHz for a total power consumption of 98mW. The chip area including bond pads is 1mm×0.7mm.
Original languageEnglish
Title of host publicationProceedings of the 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 17-19 June 2012, Montreal, Quebec
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages25-28
ISBN (Print)978-1-4673-0415-3
DOIs
Publication statusPublished - 2012
Event2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2012) - Montréal, Canada
Duration: 17 Jun 201219 Jun 2012

Conference

Conference2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC 2012)
Abbreviated titleRFIC 2012
CountryCanada
CityMontréal
Period17/06/1219/06/12

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    Ma, Q., Mahmoudi, R., & Leenaerts, D. M. W. (2012). A 30GHz 2dB NF low noise amplifier for Ka-band applications. In Proceedings of the 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 17-19 June 2012, Montreal, Quebec (pp. 25-28). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/RFIC.2012.6242224