An 8 b SAR ADC is presented. The 90 nm CMOS prototype achieves an ENOB of 7.8 b at a sampling frequency of 10.24 MS/S. The use of asynchronous dynamic CMOS logic, custom-designed capacitors, an internal common-mode shift and low-leakage design techniques results in a power consumption of 69 Â¿W from a 1 V supply. The corresponding FoM equals 30 fJ/Conversion-step and is maintained down to 10 kS/s.
|Title of host publication||Proceedings of the IEEE International Solid-State Circuits Conference 2010 (ISSCC 2010), 7-11 February 2010, Pennsylvania|
|Place of Publication||Piscataway|
|Publisher||Institute of Electrical and Electronics Engineers|
|Publication status||Published - 2010|
Harpe, P. J. A., Zhou, C., Wang, X., Dolmans, G., & Groot, de, H. W. H. (2010). A 30fJ/conversion-step 8b 0-to-10MS/s asynchronous SAR ADC in 90nm CMOS. In Proceedings of the IEEE International Solid-State Circuits Conference 2010 (ISSCC 2010), 7-11 February 2010, Pennsylvania (pp. 388-389). Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ISSCC.2010.5433967