A 30/35 GHz dual-band transmitter for phased arrays in communication/radar applications

Y. Pei; Y. Chen; D.M.W. Leenaerts; A.H.M. van Roermund

doi:10.1109/JSSC.2015.2412689

A 30/35 GHz dual-band transmitter for phased arrays in communication/radar applications

Y. Pei
, Y. Chen
, D.M.W. Leenaerts
, A.H.M. van Roermund

Research output: Contribution to journal › Article › Academic › peer-review

20 Citations (Scopus)

2 Downloads (Pure)

Abstract

A fully integrated single-channel transmitter is proposed for 30/35 GHz dual-band operation for communication/radar phased array systems. Implemented in a 0.25 μm BiCMOS technology, the transmitter achieves 10° phase shift resolution and 5 bit amplitude resolution suitable for advanced beamforming algorithms for suppression and nulling of side lobes. The integration covers from the baseband I/Q modulation to the RF output, including a low phase noise on-chip VCO and dual-band LO generation circuitry. An RF output power of > +14.5 dBm is achieved in both frequency bands by a linear power amplifier. The core circuit occupies a die area of 1.1 mm 2 and consumes 222-241 mA current from a 3.3 V supply.

Original language	English
Pages (from-to)	1629-1644
Number of pages	15
Journal	IEEE Journal of Solid-State Circuits
Volume	50
Issue number	7
DOIs	https://doi.org/10.1109/JSSC.2015.2412689
Publication status	Published - 2015

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title = "A 30/35 GHz dual-band transmitter for phased arrays in communication/radar applications",

abstract = "A fully integrated single-channel transmitter is proposed for 30/35 GHz dual-band operation for communication/radar phased array systems. Implemented in a 0.25 μm BiCMOS technology, the transmitter achieves 10° phase shift resolution and 5 bit amplitude resolution suitable for advanced beamforming algorithms for suppression and nulling of side lobes. The integration covers from the baseband I/Q modulation to the RF output, including a low phase noise on-chip VCO and dual-band LO generation circuitry. An RF output power of > +14.5 dBm is achieved in both frequency bands by a linear power amplifier. The core circuit occupies a die area of 1.1 mm 2 and consumes 222-241 mA current from a 3.3 V supply.",

author = "Y. Pei and Y. Chen and D.M.W. Leenaerts and \{van Roermund\}, A.H.M.",

year = "2015",

doi = "10.1109/JSSC.2015.2412689",

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AU - Leenaerts, D.M.W.

AU - van Roermund, A.H.M.

PY - 2015

Y1 - 2015

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AB - A fully integrated single-channel transmitter is proposed for 30/35 GHz dual-band operation for communication/radar phased array systems. Implemented in a 0.25 μm BiCMOS technology, the transmitter achieves 10° phase shift resolution and 5 bit amplitude resolution suitable for advanced beamforming algorithms for suppression and nulling of side lobes. The integration covers from the baseband I/Q modulation to the RF output, including a low phase noise on-chip VCO and dual-band LO generation circuitry. An RF output power of > +14.5 dBm is achieved in both frequency bands by a linear power amplifier. The core circuit occupies a die area of 1.1 mm 2 and consumes 222-241 mA current from a 3.3 V supply.

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DO - 10.1109/JSSC.2015.2412689

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JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

IS - 7

ER -

A 30/35 GHz dual-band transmitter for phased arrays in communication/radar applications

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