A 2.98pJ/conversion 0.0023mm2 Dynamic Temperature Sensor with Fully On-Chip Corrections

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Abstract

Nowadays, many battery-operated SoCs for loT and environmental monitoring applications are equipped with temperature sensors. In these miniaturized systems, power and area are two critical concerns. One challenge for temperature sensors is that they are sensitive to process corners and random mismatch. Generally, a 2-point trim and systematic non-linear error removal are required, especially for resistor-based sensing front-ends with two types of resistors, whose spread is partially uncorrelated [1], [2]. These corrections are done off-chip and digitally in most publications. In particular for low power sensors, they may consume more power and area than the sensor itself when integrated on-chip [3]. This work presents a resistive temperature sensor that integrates on-chip analog offset, gain and non-linearity correction techniques, while keeping state-of-the-art power and size performance. The prototype consumes 2.98pJ/conversion with an area of 0. 0023textmm 2 including all the correction techniques and achieves +0.7/-0.6 circC inaccuracy.

Original languageEnglish
Title of host publication2023 IEEE International Solid-State Circuits Conference, ISSCC 2023
PublisherInstitute of Electrical and Electronics Engineers
Pages356-358
Number of pages3
ISBN (Electronic)978-1-6654-9016-0
DOIs
Publication statusPublished - 2023
Event70th IEEE International Solid-State Circuits Conference, ISSCC 2023 - Virtual, Online, United States
Duration: 19 Feb 202323 Feb 2023

Conference

Conference70th IEEE International Solid-State Circuits Conference, ISSCC 2023
Country/TerritoryUnited States
CityVirtual, Online
Period19/02/2323/02/23

Bibliographical note

Funding Information:
This work is financed by the Dutch Research Council (NWO) with project number 16594. We kindly acknowledge EUROPRACTICE for its MPW and design tool support.

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