A 29-37 GHz BiCMOS low-noise amplifier with 28.5 dB peak gain and 3.1-4.1 dB NF

Zhe Chen; Hao Gao; Domine Leenaerts; Dusan Milosevic; Peter Baltus

doi:10.1109/RFIC.2018.8429020

A 29-37 GHz BiCMOS low-noise amplifier with 28.5 dB peak gain and 3.1-4.1 dB NF

Zhe Chen, Hao Gao, Domine Leenaerts, Dusan Milosevic, Peter Baltus

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

47 Citations (Scopus)

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Abstract

This paper presents a 28.5 dB high-gain Ka-band low-noise amplifier (LNA) in a 0.25 μm SiGe:C BiCMOS technology. To achieve wide band (fractional bandwidth > 25^%) simultaneous noise and power matching with compact size, a 3-winding transformer based dualtank matching technique is proposed and implemented for the input matching. The LNA provides 28.5 dB peak gain at 32 GHz with a 3-dB gain bandwidth from 29 to 37 GHz. Within this bandwidth, it also achieves simultaneously low-noise (3.1-4.1 dB) and power matching (S₁₁ < -10 dB). The measured input IP3 and P_1dB at 32 GHz are -12.5 dBm and - 22.0 dBm, respectively, and the total DC power consumption is 80 mW.

Original language	English
Title of host publication	Proceedings of the 2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	288-291
Number of pages	4
ISBN (Electronic)	978-1-5386-4545-1
ISBN (Print)	978-1-5386-4546-8
DOIs	https://doi.org/10.1109/RFIC.2018.8429020
Publication status	Published - 7 Aug 2018
Event	2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018 - Philadelphia, United States Duration: 10 Jun 2018 → 12 Jun 2018

Conference

Conference	2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018
Country/Territory	United States
City	Philadelphia
Period	10/06/18 → 12/06/18

Keywords

C BiCMOS
high-gain
low-noise amplifier (LNA)
SiGe
transformer
wideband

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10.1109/RFIC.2018.8429020

Cite this

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title = "A 29-37 GHz BiCMOS low-noise amplifier with 28.5 dB peak gain and 3.1-4.1 dB NF",

abstract = "This paper presents a 28.5 dB high-gain Ka-band low-noise amplifier (LNA) in a 0.25 μm SiGe:C BiCMOS technology. To achieve wide band (fractional bandwidth > 25%) simultaneous noise and power matching with compact size, a 3-winding transformer based dualtank matching technique is proposed and implemented for the input matching. The LNA provides 28.5 dB peak gain at 32 GHz with a 3-dB gain bandwidth from 29 to 37 GHz. Within this bandwidth, it also achieves simultaneously low-noise (3.1-4.1 dB) and power matching (S11 < -10 dB). The measured input IP3 and P1dB at 32 GHz are -12.5 dBm and - 22.0 dBm, respectively, and the total DC power consumption is 80 mW.",

keywords = "C BiCMOS, high-gain, low-noise amplifier (LNA), SiGe, transformer, wideband",

author = "Zhe Chen and Hao Gao and Domine Leenaerts and Dusan Milosevic and Peter Baltus",

year = "2018",

month = aug,

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pages = "288--291",

booktitle = "Proceedings of the 2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018 ; Conference date: 10-06-2018 Through 12-06-2018",

}

Chen, Z, Gao, H , Leenaerts, D , Milosevic, D & Baltus, P 2018, A 29-37 GHz BiCMOS low-noise amplifier with 28.5 dB peak gain and 3.1-4.1 dB NF. in Proceedings of the 2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018., 8429020, Institute of Electrical and Electronics Engineers, Piscataway, pp. 288-291, 2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018, Philadelphia, United States, 10/06/18. https://doi.org/10.1109/RFIC.2018.8429020

A 29-37 GHz BiCMOS low-noise amplifier with 28.5 dB peak gain and 3.1-4.1 dB NF. / Chen, Zhe; Gao, Hao ; Leenaerts, Domine et al.
Proceedings of the 2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018. Piscataway: Institute of Electrical and Electronics Engineers, 2018. p. 288-291 8429020.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Baltus, Peter

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AB - This paper presents a 28.5 dB high-gain Ka-band low-noise amplifier (LNA) in a 0.25 μm SiGe:C BiCMOS technology. To achieve wide band (fractional bandwidth > 25%) simultaneous noise and power matching with compact size, a 3-winding transformer based dualtank matching technique is proposed and implemented for the input matching. The LNA provides 28.5 dB peak gain at 32 GHz with a 3-dB gain bandwidth from 29 to 37 GHz. Within this bandwidth, it also achieves simultaneously low-noise (3.1-4.1 dB) and power matching (S11 < -10 dB). The measured input IP3 and P1dB at 32 GHz are -12.5 dBm and - 22.0 dBm, respectively, and the total DC power consumption is 80 mW.

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A 29-37 GHz BiCMOS low-noise amplifier with 28.5 dB peak gain and 3.1-4.1 dB NF

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