A 29-37 GHz BiCMOS low-noise amplifier with 28.5 dB peak gain and 3.1-4.1 dB NF

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

5 Citations (Scopus)

Abstract

This paper presents a 28.5 dB high-gain Ka-band low-noise amplifier (LNA) in a 0.25 μm SiGe:C BiCMOS technology. To achieve wide band (fractional bandwidth > 25%) simultaneous noise and power matching with compact size, a 3-winding transformer based dualtank matching technique is proposed and implemented for the input matching. The LNA provides 28.5 dB peak gain at 32 GHz with a 3-dB gain bandwidth from 29 to 37 GHz. Within this bandwidth, it also achieves simultaneously low-noise (3.1-4.1 dB) and power matching (S11 < -10 dB). The measured input IP3 and P1dB at 32 GHz are -12.5 dBm and - 22.0 dBm, respectively, and the total DC power consumption is 80 mW.

LanguageEnglish
Title of host publicationProceedings of the 2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages288-291
Number of pages4
ISBN (Electronic)978-1-5386-4545-1
ISBN (Print)978-1-5386-4546-8
DOIs
StatePublished - 7 Aug 2018
Event2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018 - Philadelphia, United States
Duration: 10 Jun 201812 Jun 2018

Conference

Conference2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018
CountryUnited States
CityPhiladelphia
Period10/06/1812/06/18

Fingerprint

Low noise amplifiers
Bandwidth
Transformer windings
BiCMOS technology
Electric power utilization

Keywords

  • C BiCMOS
  • high-gain
  • low-noise amplifier (LNA)
  • SiGe
  • transformer
  • wideband

Cite this

Chen, Z., Gao, H., Leenaerts, D., Milosevic, D., & Baltus, P. (2018). A 29-37 GHz BiCMOS low-noise amplifier with 28.5 dB peak gain and 3.1-4.1 dB NF. In Proceedings of the 2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018 (pp. 288-291). [8429020] Piscataway: Institute of Electrical and Electronics Engineers. DOI: 10.1109/RFIC.2018.8429020
Chen, Zhe ; Gao, Hao ; Leenaerts, Domine ; Milosevic, Dusan ; Baltus, Peter. / A 29-37 GHz BiCMOS low-noise amplifier with 28.5 dB peak gain and 3.1-4.1 dB NF. Proceedings of the 2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018. Piscataway : Institute of Electrical and Electronics Engineers, 2018. pp. 288-291
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abstract = "This paper presents a 28.5 dB high-gain Ka-band low-noise amplifier (LNA) in a 0.25 μm SiGe:C BiCMOS technology. To achieve wide band (fractional bandwidth > 25{\%}) simultaneous noise and power matching with compact size, a 3-winding transformer based dualtank matching technique is proposed and implemented for the input matching. The LNA provides 28.5 dB peak gain at 32 GHz with a 3-dB gain bandwidth from 29 to 37 GHz. Within this bandwidth, it also achieves simultaneously low-noise (3.1-4.1 dB) and power matching (S11 < -10 dB). The measured input IP3 and P1dB at 32 GHz are -12.5 dBm and - 22.0 dBm, respectively, and the total DC power consumption is 80 mW.",
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author = "Zhe Chen and Hao Gao and Domine Leenaerts and Dusan Milosevic and Peter Baltus",
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Chen, Z, Gao, H, Leenaerts, D, Milosevic, D & Baltus, P 2018, A 29-37 GHz BiCMOS low-noise amplifier with 28.5 dB peak gain and 3.1-4.1 dB NF. in Proceedings of the 2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018., 8429020, Institute of Electrical and Electronics Engineers, Piscataway, pp. 288-291, 2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018, Philadelphia, United States, 10/06/18. DOI: 10.1109/RFIC.2018.8429020

A 29-37 GHz BiCMOS low-noise amplifier with 28.5 dB peak gain and 3.1-4.1 dB NF. / Chen, Zhe; Gao, Hao; Leenaerts, Domine; Milosevic, Dusan; Baltus, Peter.

Proceedings of the 2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018. Piscataway : Institute of Electrical and Electronics Engineers, 2018. p. 288-291 8429020.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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AB - This paper presents a 28.5 dB high-gain Ka-band low-noise amplifier (LNA) in a 0.25 μm SiGe:C BiCMOS technology. To achieve wide band (fractional bandwidth > 25%) simultaneous noise and power matching with compact size, a 3-winding transformer based dualtank matching technique is proposed and implemented for the input matching. The LNA provides 28.5 dB peak gain at 32 GHz with a 3-dB gain bandwidth from 29 to 37 GHz. Within this bandwidth, it also achieves simultaneously low-noise (3.1-4.1 dB) and power matching (S11 < -10 dB). The measured input IP3 and P1dB at 32 GHz are -12.5 dBm and - 22.0 dBm, respectively, and the total DC power consumption is 80 mW.

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Chen Z, Gao H, Leenaerts D, Milosevic D, Baltus P. A 29-37 GHz BiCMOS low-noise amplifier with 28.5 dB peak gain and 3.1-4.1 dB NF. In Proceedings of the 2018 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2018. Piscataway: Institute of Electrical and Electronics Engineers. 2018. p. 288-291. 8429020. Available from, DOI: 10.1109/RFIC.2018.8429020