A 28.5GHz RF receiver front-end on a 70GHz fT BiCMOS process

F. Fortes, R. Mahmoudi, A.H.M. Roermund, van

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

This paper presents the design and test of an RF receiver front-end aimed at 28.5GHz center frequency for LMDS applications. The challenge was to implement the receiver in a 0.25mum SiGe BiCMOS process in which the active devices have 70GHz fr (close to twice the target frequency). This process was optimized for a decade lower than the current application but the passive components have reasonable quality factors at the target frequency.
Original languageEnglish
Title of host publicationProceedings of the Asia-Pacific Microwave Conference, 2008. APMC 2008. December 16-19, 2008, Macau
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages1-4
ISBN (Print)978-1-4244-2642-3
DOIs
Publication statusPublished - 2008

Cite this

Fortes, F., Mahmoudi, R., & Roermund, van, A. H. M. (2008). A 28.5GHz RF receiver front-end on a 70GHz fT BiCMOS process. In Proceedings of the Asia-Pacific Microwave Conference, 2008. APMC 2008. December 16-19, 2008, Macau (pp. 1-4). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/APMC.2008.4957917