This paper presents the design and test of an RF receiver front-end aimed at 28.5GHz center frequency for LMDS applications. The challenge was to implement the receiver in a 0.25mum SiGe BiCMOS process in which the active devices have 70GHz fr (close to twice the target frequency). This process was optimized for a decade lower than the current application but the passive components have reasonable quality factors at the target frequency.
|Title of host publication||Proceedings of the Asia-Pacific Microwave Conference, 2008. APMC 2008. December 16-19, 2008, Macau|
|Place of Publication||Piscataway|
|Publisher||Institute of Electrical and Electronics Engineers|
|Publication status||Published - 2008|
Fortes, F., Mahmoudi, R., & Roermund, van, A. H. M. (2008). A 28.5GHz RF receiver front-end on a 70GHz fT BiCMOS process. In Proceedings of the Asia-Pacific Microwave Conference, 2008. APMC 2008. December 16-19, 2008, Macau (pp. 1-4). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/APMC.2008.4957917