A 28.5GHz RF receiver front-end on a 70GHz fT BiCMOS process

F. Fortes; R. Mahmoudi; A.H.M. Roermund, van

doi:10.1109/APMC.2008.4957917

A 28.5GHz RF receiver front-end on a 70GHz fT BiCMOS process

F. Fortes, R. Mahmoudi, A.H.M. Roermund, van

Integrated Circuits

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

This paper presents the design and test of an RF receiver front-end aimed at 28.5GHz center frequency for LMDS applications. The challenge was to implement the receiver in a 0.25mum SiGe BiCMOS process in which the active devices have 70GHz fr (close to twice the target frequency). This process was optimized for a decade lower than the current application but the passive components have reasonable quality factors at the target frequency.

Original language	English
Title of host publication	Proceedings of the Asia-Pacific Microwave Conference, 2008. APMC 2008. December 16-19, 2008, Macau
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	1-4
ISBN (Print)	978-1-4244-2642-3
DOIs	https://doi.org/10.1109/APMC.2008.4957917
Publication status	Published - 2008

Access to Document

10.1109/APMC.2008.4957917

Cite this

Fortes, F., Mahmoudi, R., & Roermund, van, A. H. M. (2008). A 28.5GHz RF receiver front-end on a 70GHz fT BiCMOS process. In Proceedings of the Asia-Pacific Microwave Conference, 2008. APMC 2008. December 16-19, 2008, Macau (pp. 1-4). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/APMC.2008.4957917

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abstract = "This paper presents the design and test of an RF receiver front-end aimed at 28.5GHz center frequency for LMDS applications. The challenge was to implement the receiver in a 0.25mum SiGe BiCMOS process in which the active devices have 70GHz fr (close to twice the target frequency). This process was optimized for a decade lower than the current application but the passive components have reasonable quality factors at the target frequency.",

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A 28.5GHz RF receiver front-end on a 70GHz fT BiCMOS process. / Fortes, F.; Mahmoudi, R.; Roermund, van, A.H.M.

Proceedings of the Asia-Pacific Microwave Conference, 2008. APMC 2008. December 16-19, 2008, Macau. Piscataway : Institute of Electrical and Electronics Engineers, 2008. p. 1-4.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AB - This paper presents the design and test of an RF receiver front-end aimed at 28.5GHz center frequency for LMDS applications. The challenge was to implement the receiver in a 0.25mum SiGe BiCMOS process in which the active devices have 70GHz fr (close to twice the target frequency). This process was optimized for a decade lower than the current application but the passive components have reasonable quality factors at the target frequency.

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M3 - Conference contribution

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BT - Proceedings of the Asia-Pacific Microwave Conference, 2008. APMC 2008. December 16-19, 2008, Macau

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