A 28 nm 2 GS/s 5-b Single-channel SAR ADC with gm-boosted StrongARM Comparator

Pierluigi Cenci, Muhammed Bolatkale, Robert Rutten, Gerard Lassche, Kofi Makinwa, Lucien Breems

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

Abstract

This paper presents a 2 GS/s 5-b single-channel SAR ADC in 28 nm CMOS. The ADC uses a gm-boosted StrongARM comparator to achieve the highest reported sampling frequency for a non-time-interleaved SAR ADC. Its high sampling frequency, large input signal capability and one clock cycle latency make the ADC suitable for time-interleaved, multi-stage and feedback ADC architectures. The ADC occupies 900 μm2 and consumes 1.25 mW from a 0.9 V supply. Without calibration, and when operated at 1.5 GS/s it achieves 30.3 dB SNDR (FOMW=31.2 fJ/conv.-step). This drops slightly, to 27.4dB, at the maximum sampling rate of 2 GS/s.

Original languageEnglish
Title of host publicationESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages171-174
Number of pages4
ISBN (Electronic)9781509050253
DOIs
Publication statusPublished - 2 Nov 2017
Event43rd IEEE European Solid State Circuits Conference (ESSCIRC 2017) - Leuven, Belgium
Duration: 11 Sep 201714 Sep 2017
Conference number: 43

Conference

Conference43rd IEEE European Solid State Circuits Conference (ESSCIRC 2017)
Abbreviated titleESSCIRC 2017
CountryBelgium
CityLeuven
Period11/09/1714/09/17

Keywords

  • 28 nm CMOS
  • Asynchronous logic
  • Bottom plate sampling
  • Gm-boosted StrongARM comparator
  • Rail-to-rail input signal
  • SAR converter
  • Single-channel

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  • Cite this

    Cenci, P., Bolatkale, M., Rutten, R., Lassche, G., Makinwa, K., & Breems, L. (2017). A 28 nm 2 GS/s 5-b Single-channel SAR ADC with gm-boosted StrongARM Comparator. In ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference (pp. 171-174). [8094553] Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ESSCIRC.2017.8094553