A 27GHz, 31dBm power amplifier in a 0.25um SiGe:C BICMOS technology

J.A.J. Essing; D.M.W. Leenaerts; R. Mahmoudi

doi:10.1109/BCTM.2014.6981301

A 27GHz, 31dBm power amplifier in a 0.25um SiGe:C BICMOS technology

J.A.J. Essing
, D.M.W. Leenaerts
, R. Mahmoudi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

17 Citations (Scopus)

4 Downloads (Pure)

Abstract

This paper describes an 8-way in-phase current combining power amplifier (PA) for Ka-band applications implemented in a 0.25um SiGe:C BiCMOS technology. The PA achieves a saturated output power of 29.7dBm at 27GHz with a maximum PAE of 10.5%. After applying load-pull, this output power increases further to a level of 31dBm with a maximum PAE of 13%. The small-signal gain is 24.5dB and the saturated gain is more than 14.7dB in the band of interest. The consumed area is only 2.83mm2.

Original language	English
Title of host publication	proceeding of Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 28 September - 01 October 2014, Coronado, CA, USA
Pages	143-146
DOIs	https://doi.org/10.1109/BCTM.2014.6981301
Publication status	Published - 2014
Event	2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2014), September 28-October 1, 2014, Coronado, CA, USA - Coronado Island Marriott Resort & Spa, Coronado, CA, United States Duration: 28 Sept 2014 → 1 Oct 2014

Conference

Conference	2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2014), September 28-October 1, 2014, Coronado, CA, USA
Abbreviated title	BCTM 2014
Country/Territory	United States
City	Coronado, CA
Period	28/09/14 → 1/10/14

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10.1109/BCTM.2014.6981301

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@inproceedings{eb4b9091891a477785c3468812cb0067,

title = "A 27GHz, 31dBm power amplifier in a 0.25um SiGe:C BICMOS technology",

abstract = "This paper describes an 8-way in-phase current combining power amplifier (PA) for Ka-band applications implemented in a 0.25um SiGe:C BiCMOS technology. The PA achieves a saturated output power of 29.7dBm at 27GHz with a maximum PAE of 10.5\%. After applying load-pull, this output power increases further to a level of 31dBm with a maximum PAE of 13\%. The small-signal gain is 24.5dB and the saturated gain is more than 14.7dB in the band of interest. The consumed area is only 2.83mm2.",

author = "J.A.J. Essing and D.M.W. Leenaerts and R. Mahmoudi",

year = "2014",

doi = "10.1109/BCTM.2014.6981301",

language = "English",

pages = "143--146",

booktitle = "proceeding of Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 28 September - 01 October 2014, Coronado, CA, USA",

note = "2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2014), September 28-October 1, 2014, Coronado, CA, USA, BCTM 2014 ; Conference date: 28-09-2014 Through 01-10-2014",

}

Essing, JAJ, Leenaerts, DMW & Mahmoudi, R 2014, A 27GHz, 31dBm power amplifier in a 0.25um SiGe:C BICMOS technology. in proceeding of Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 28 September - 01 October 2014, Coronado, CA, USA. pp. 143-146, 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2014), September 28-October 1, 2014, Coronado, CA, USA, Coronado, CA, United States, 28/09/14. https://doi.org/10.1109/BCTM.2014.6981301

A 27GHz, 31dBm power amplifier in a 0.25um SiGe:C BICMOS technology. / Essing, J.A.J.; Leenaerts, D.M.W.; Mahmoudi, R.
proceeding of Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 28 September - 01 October 2014, Coronado, CA, USA. 2014. p. 143-146.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - A 27GHz, 31dBm power amplifier in a 0.25um SiGe:C BICMOS technology

AU - Essing, J.A.J.

AU - Leenaerts, D.M.W.

AU - Mahmoudi, R.

PY - 2014

Y1 - 2014

N2 - This paper describes an 8-way in-phase current combining power amplifier (PA) for Ka-band applications implemented in a 0.25um SiGe:C BiCMOS technology. The PA achieves a saturated output power of 29.7dBm at 27GHz with a maximum PAE of 10.5%. After applying load-pull, this output power increases further to a level of 31dBm with a maximum PAE of 13%. The small-signal gain is 24.5dB and the saturated gain is more than 14.7dB in the band of interest. The consumed area is only 2.83mm2.

AB - This paper describes an 8-way in-phase current combining power amplifier (PA) for Ka-band applications implemented in a 0.25um SiGe:C BiCMOS technology. The PA achieves a saturated output power of 29.7dBm at 27GHz with a maximum PAE of 10.5%. After applying load-pull, this output power increases further to a level of 31dBm with a maximum PAE of 13%. The small-signal gain is 24.5dB and the saturated gain is more than 14.7dB in the band of interest. The consumed area is only 2.83mm2.

U2 - 10.1109/BCTM.2014.6981301

DO - 10.1109/BCTM.2014.6981301

M3 - Conference contribution

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EP - 146

BT - proceeding of Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 28 September - 01 October 2014, Coronado, CA, USA

T2 - 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2014), September 28-October 1, 2014, Coronado, CA, USA

Y2 - 28 September 2014 through 1 October 2014

ER -

A 27GHz, 31dBm power amplifier in a 0.25um SiGe:C BICMOS technology

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