This paper describes an 8-way in-phase current combining power amplifier (PA) for Ka-band applications implemented in a 0.25um SiGe:C BiCMOS technology. The PA achieves a saturated output power of 29.7dBm at 27GHz with a maximum PAE of 10.5%. After applying load-pull, this output power increases further to a level of 31dBm with a maximum PAE of 13%. The small-signal gain is 24.5dB and the saturated gain is more than 14.7dB in the band of interest. The consumed area is only 2.83mm2.
|Title of host publication||proceeding of Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 28 September - 01 October 2014, Coronado, CA, USA|
|Publication status||Published - 2014|
|Event||2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2014), September 28-October 1, 2014, Coronado, CA, USA - Coronado Island Marriott Resort & Spa, Coronado, CA, United States|
Duration: 28 Sep 2014 → 1 Oct 2014
|Conference||2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2014), September 28-October 1, 2014, Coronado, CA, USA|
|Abbreviated title||BCTM 2014|
|Period||28/09/14 → 1/10/14|