A 27GHz, 31dBm power amplifier in a 0.25um SiGe:C BICMOS technology

J.A.J. Essing, D.M.W. Leenaerts, R. Mahmoudi

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

12 Citations (Scopus)
4 Downloads (Pure)

Abstract

This paper describes an 8-way in-phase current combining power amplifier (PA) for Ka-band applications implemented in a 0.25um SiGe:C BiCMOS technology. The PA achieves a saturated output power of 29.7dBm at 27GHz with a maximum PAE of 10.5%. After applying load-pull, this output power increases further to a level of 31dBm with a maximum PAE of 13%. The small-signal gain is 24.5dB and the saturated gain is more than 14.7dB in the band of interest. The consumed area is only 2.83mm2.
Original languageEnglish
Title of host publicationproceeding of Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 28 September - 01 October 2014, Coronado, CA, USA
Pages143-146
DOIs
Publication statusPublished - 2014
Event2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2014), September 28-October 1, 2014, Coronado, CA, USA - Coronado Island Marriott Resort & Spa, Coronado, CA, United States
Duration: 28 Sep 20141 Oct 2014

Conference

Conference2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2014), September 28-October 1, 2014, Coronado, CA, USA
Abbreviated titleBCTM 2014
CountryUnited States
CityCoronado, CA
Period28/09/141/10/14

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  • Cite this

    Essing, J. A. J., Leenaerts, D. M. W., & Mahmoudi, R. (2014). A 27GHz, 31dBm power amplifier in a 0.25um SiGe:C BICMOS technology. In proceeding of Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 28 September - 01 October 2014, Coronado, CA, USA (pp. 143-146) https://doi.org/10.1109/BCTM.2014.6981301