A 20 GHz 1.9 dB NF LNA with distributed notch filtering for VSAT applications

C. Lu; M. Matters - Kammerer; R. Mahmoudi; P.G.M. Baltus

doi:10.1109/MWSYM.2014.6848484

A 20 GHz 1.9 dB NF LNA with distributed notch filtering for VSAT applications

C. Lu, M. Matters - Kammerer, R. Mahmoudi, P.G.M. Baltus

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

20 Citations (Scopus)

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Abstract

This paper presents a 20 GHz low noise amplifier (LNA) with notch filtering from 27.5 GHz to 31 GHz in a 0.25 µm SiGe:C BiCMOS technology. Notch filters are proposed to be implemented at different stages to have minor impact on the noise figure (NF), while achieving high attenuation around 30 GHz. In comparison with a reference LNA without filtering, it achieves overall filtering of more than -30 dB from 27.5 GHz to 31 GHz, with a NF of 1.9 dB degraded by only 0.1 dB to 0.4 dB. More than 17 dB improvement is achieved on the gain compression and triple beat IIP3 in presence of high power blocker. Besides, both LNA's achieve best NF to-date with high overall performance at K-band in silicon technologies.

Original language	English
Title of host publication	Proceedings of the International Microwave Symposium Digest 2014 (IEEE MTT-S 2014), 1-6 June 2014, Tampa Bay, Florida
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	1-4
DOIs	https://doi.org/10.1109/MWSYM.2014.6848484
Publication status	Published - 2014

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Lu, C., Matters - Kammerer, M., Mahmoudi, R., & Baltus, P. G. M. (2014). A 20 GHz 1.9 dB NF LNA with distributed notch filtering for VSAT applications. In Proceedings of the International Microwave Symposium Digest 2014 (IEEE MTT-S 2014), 1-6 June 2014, Tampa Bay, Florida (pp. 1-4). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/MWSYM.2014.6848484

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title = "A 20 GHz 1.9 dB NF LNA with distributed notch filtering for VSAT applications",

abstract = "This paper presents a 20 GHz low noise amplifier (LNA) with notch filtering from 27.5 GHz to 31 GHz in a 0.25 µm SiGe:C BiCMOS technology. Notch filters are proposed to be implemented at different stages to have minor impact on the noise figure (NF), while achieving high attenuation around 30 GHz. In comparison with a reference LNA without filtering, it achieves overall filtering of more than -30 dB from 27.5 GHz to 31 GHz, with a NF of 1.9 dB degraded by only 0.1 dB to 0.4 dB. More than 17 dB improvement is achieved on the gain compression and triple beat IIP3 in presence of high power blocker. Besides, both LNA's achieve best NF to-date with high overall performance at K-band in silicon technologies.",

author = "C. Lu and {Matters - Kammerer}, M. and R. Mahmoudi and P.G.M. Baltus",

year = "2014",

doi = "10.1109/MWSYM.2014.6848484",

language = "English",

pages = "1--4",

booktitle = "Proceedings of the International Microwave Symposium Digest 2014 (IEEE MTT-S 2014), 1-6 June 2014, Tampa Bay, Florida",

publisher = "Institute of Electrical and Electronics Engineers",

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Lu, C, Matters - Kammerer, M, Mahmoudi, R & Baltus, PGM 2014, A 20 GHz 1.9 dB NF LNA with distributed notch filtering for VSAT applications. in Proceedings of the International Microwave Symposium Digest 2014 (IEEE MTT-S 2014), 1-6 June 2014, Tampa Bay, Florida. Institute of Electrical and Electronics Engineers, Piscataway, pp. 1-4. https://doi.org/10.1109/MWSYM.2014.6848484

A 20 GHz 1.9 dB NF LNA with distributed notch filtering for VSAT applications. / Lu, C.; Matters - Kammerer, M.; Mahmoudi, R. et al.
Proceedings of the International Microwave Symposium Digest 2014 (IEEE MTT-S 2014), 1-6 June 2014, Tampa Bay, Florida. Piscataway: Institute of Electrical and Electronics Engineers, 2014. p. 1-4.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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N2 - This paper presents a 20 GHz low noise amplifier (LNA) with notch filtering from 27.5 GHz to 31 GHz in a 0.25 µm SiGe:C BiCMOS technology. Notch filters are proposed to be implemented at different stages to have minor impact on the noise figure (NF), while achieving high attenuation around 30 GHz. In comparison with a reference LNA without filtering, it achieves overall filtering of more than -30 dB from 27.5 GHz to 31 GHz, with a NF of 1.9 dB degraded by only 0.1 dB to 0.4 dB. More than 17 dB improvement is achieved on the gain compression and triple beat IIP3 in presence of high power blocker. Besides, both LNA's achieve best NF to-date with high overall performance at K-band in silicon technologies.

AB - This paper presents a 20 GHz low noise amplifier (LNA) with notch filtering from 27.5 GHz to 31 GHz in a 0.25 µm SiGe:C BiCMOS technology. Notch filters are proposed to be implemented at different stages to have minor impact on the noise figure (NF), while achieving high attenuation around 30 GHz. In comparison with a reference LNA without filtering, it achieves overall filtering of more than -30 dB from 27.5 GHz to 31 GHz, with a NF of 1.9 dB degraded by only 0.1 dB to 0.4 dB. More than 17 dB improvement is achieved on the gain compression and triple beat IIP3 in presence of high power blocker. Besides, both LNA's achieve best NF to-date with high overall performance at K-band in silicon technologies.

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M3 - Conference contribution

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BT - Proceedings of the International Microwave Symposium Digest 2014 (IEEE MTT-S 2014), 1-6 June 2014, Tampa Bay, Florida

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

ER -

A 20 GHz 1.9 dB NF LNA with distributed notch filtering for VSAT applications

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