A 2 GHz 0.98 mW 4-bit SAR-based quantizer with ELD compensation in an UWB CT ΣΔ modulator

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Abstract

This paper presents a 2 GHz 4-bit asynchronous successive approximation register (SAR) quantizer to enable an ultra-wideband continuous-time (CT) sigma-delta modulator (SDM). Low latency is required for the stability of the SDM. The excess-loop-delay compensation (ELDC) is embedded in the SAR quantizer by adding an extra switched-capacitor DAC segment with two separate reference voltages. To achieve high speed, a gm-boosted StrongARM latch and the monotonic switching scheme are used. This paper presents the transistor-level circuit implementation and the complete verification of the CT SDM. Simulation results show the power consumption of this SAR-based quantizer including ELDC is 0.98 mW, leading to a very competitive Figure-of-Merit of 30.6 fJ/conv.-step.

Original languageEnglish
Title of host publication2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Proceedings
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Number of pages5
ISBN (Electronic)978-1-5386-4881-0
ISBN (Print)978-1-5386-4882-7
DOIs
Publication statusPublished - 26 Apr 2018
Event2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Florence Conference Center, Florence, Italy
Duration: 27 May 201830 May 2018
https://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=8334884

Conference

Conference2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018
Abbreviated titleISCAS 2018
CountryItaly
CityFlorence
Period27/05/1830/05/18
Internet address

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Keywords

  • Clocks
  • Switches
  • Generators
  • Registers
  • Latches
  • Transistors
  • Power demand

Cite this

Zhou, M., Neofytou, M., Bolatkale, M., Liu, Q., Zhang, C., Cenci, P., ... Breems, L. (2018). A 2 GHz 0.98 mW 4-bit SAR-based quantizer with ELD compensation in an UWB CT ΣΔ modulator. In 2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Proceedings [8350889] Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ISCAS.2018.8350889