A 1.95GHz sub-1dB NF, +40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS

J. Bergervoet; D. Leenaerts; G. de Jong; E. van der Heijden; J.W. Lobeek; A. Simin

doi:10.1109/ESSCIRC.2011.6044948

A 1.95GHz sub-1dB NF, +40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS

J. Bergervoet, D. Leenaerts, G. de Jong, E. van der Heijden, J.W. Lobeek, A. Simin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

Abstract

A silicon integrated LNA for WCDMA cellular infrastructure applications, e.g. base stations will be demonstrated. The LNA is designed for the 1.92-1.98GHz band and reaches a 0.7dB NF at 27°C and 1.1 at 65°C. The output IP3 is +40dBm at 27°C and +37dBm at 65°C while having input and output return loss better than 20dB. A bypass mode and variable attenuation is also provided to cope with large input signals. The two-die MMIC is packaged on a single laminate. The total solution consumes a maximum of 197mA from a 5V supply.

Original language	English
Title of host publication	ESSCIRC 2011 - Proceedings of the 37th European Solid-State Circuits Conference
Pages	227-230
Number of pages	4
ISBN (Electronic)	978-1-4577-0704-9
DOIs	https://doi.org/10.1109/ESSCIRC.2011.6044948
Publication status	Published - 2011
Externally published	Yes
Event	37th European Solid-State Circuits Conference, ESSCIRC 2011 - Helsinki, Finland Duration: 12 Sept 2011 → 16 Sept 2011

Conference

Conference	37th European Solid-State Circuits Conference, ESSCIRC 2011
Country/Territory	Finland
City	Helsinki
Period	12/09/11 → 16/09/11

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10.1109/ESSCIRC.2011.6044948

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title = "A 1.95GHz sub-1dB NF, +40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS",

abstract = "A silicon integrated LNA for WCDMA cellular infrastructure applications, e.g. base stations will be demonstrated. The LNA is designed for the 1.92-1.98GHz band and reaches a 0.7dB NF at 27°C and 1.1 at 65°C. The output IP3 is +40dBm at 27°C and +37dBm at 65°C while having input and output return loss better than 20dB. A bypass mode and variable attenuation is also provided to cope with large input signals. The two-die MMIC is packaged on a single laminate. The total solution consumes a maximum of 197mA from a 5V supply.",

author = "J. Bergervoet and D. Leenaerts and {de Jong}, G. and {van der Heijden}, E. and J.W. Lobeek and A. Simin",

year = "2011",

doi = "10.1109/ESSCIRC.2011.6044948",

language = "English",

isbn = "978-1-4577-0703-2",

pages = "227--230",

booktitle = "ESSCIRC 2011 - Proceedings of the 37th European Solid-State Circuits Conference",

note = "37th European Solid-State Circuits Conference, ESSCIRC 2011 ; Conference date: 12-09-2011 Through 16-09-2011",

}

Bergervoet, J, Leenaerts, D, de Jong, G, van der Heijden, E, Lobeek, JW & Simin, A 2011, A 1.95GHz sub-1dB NF, +40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS. in ESSCIRC 2011 - Proceedings of the 37th European Solid-State Circuits Conference., 6044948, pp. 227-230, 37th European Solid-State Circuits Conference, ESSCIRC 2011, Helsinki, Finland, 12/09/11. https://doi.org/10.1109/ESSCIRC.2011.6044948

TY - GEN

T1 - A 1.95GHz sub-1dB NF, +40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS

AU - Bergervoet, J.

AU - Leenaerts, D.

AU - de Jong, G.

AU - van der Heijden, E.

AU - Lobeek, J.W.

AU - Simin, A.

PY - 2011

Y1 - 2011

N2 - A silicon integrated LNA for WCDMA cellular infrastructure applications, e.g. base stations will be demonstrated. The LNA is designed for the 1.92-1.98GHz band and reaches a 0.7dB NF at 27°C and 1.1 at 65°C. The output IP3 is +40dBm at 27°C and +37dBm at 65°C while having input and output return loss better than 20dB. A bypass mode and variable attenuation is also provided to cope with large input signals. The two-die MMIC is packaged on a single laminate. The total solution consumes a maximum of 197mA from a 5V supply.

AB - A silicon integrated LNA for WCDMA cellular infrastructure applications, e.g. base stations will be demonstrated. The LNA is designed for the 1.92-1.98GHz band and reaches a 0.7dB NF at 27°C and 1.1 at 65°C. The output IP3 is +40dBm at 27°C and +37dBm at 65°C while having input and output return loss better than 20dB. A bypass mode and variable attenuation is also provided to cope with large input signals. The two-die MMIC is packaged on a single laminate. The total solution consumes a maximum of 197mA from a 5V supply.

UR - http://www.scopus.com/inward/record.url?scp=82955187826&partnerID=8YFLogxK

U2 - 10.1109/ESSCIRC.2011.6044948

DO - 10.1109/ESSCIRC.2011.6044948

M3 - Conference contribution

AN - SCOPUS:82955187826

SN - 978-1-4577-0703-2

SP - 227

EP - 230

BT - ESSCIRC 2011 - Proceedings of the 37th European Solid-State Circuits Conference

T2 - 37th European Solid-State Circuits Conference, ESSCIRC 2011

Y2 - 12 September 2011 through 16 September 2011

ER -

A 1.95GHz sub-1dB NF, +40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS

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