A 16-43 GHz low-noise amplifier with 2.5-4.0 dB noise figure

Z. Chen, H. Gao, D.M.W. Leenaerts, D. Milosevic, P.G.M. Baltus

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

21 Citations (Scopus)
918 Downloads (Pure)

Abstract

This paper presents an ultra-broadband low-noise amplifier (LNA) operating from 16 to 43 GHz in a 0.25 pm SiGe:C BiCMOS technology. Across this band, the LNA achieves simultaneous low-noise performance (2.5–4.0 dB) and power matching (S11 < −10 dB) using dual-LC tank matching. The measured minimal noise figure is 2.5 dB at 26 GHz with an average value of 3.25 (±0.75) dB from 16 to 44 GHz. The best gain is 10.5 dB at 26 GHz with a 3-dB gain bandwidth from 16 to 43 GHz (90% fractional bandwidth). The measured input 1-dB compression point and input IP3 are better than −8.5 dBm and 1.8 dBm over the 16–43 GHz band, respectively, for a total power consumption of 24 mW.
Original languageEnglish
Title of host publication2016 IEEE Asian Solid-State Circuits Conference (A-SSCC), November 7-9, 2016, Toyama, Japan
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages349-352
Number of pages4
ISBN (Electronic)978-1-5090-3700-1
ISBN (Print)978-1-5090-3699-8
DOIs
Publication statusPublished - 9 Nov 2016
Event12th IEEE Asian Solid-State Circuits Conference, A-SSCC 2016 - Toyama, Japan
Duration: 7 Nov 20169 Nov 2016
Conference number: 12
http://www.asscc.org/2016/

Conference

Conference12th IEEE Asian Solid-State Circuits Conference, A-SSCC 2016
Abbreviated titleA-SSCC 2016
Country/TerritoryJapan
CityToyama
Period7/11/169/11/16
Internet address

Keywords

  • LNA
  • ultra-broadband
  • dual-LC tank
  • SiGe

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