A 16-43 GHz low-noise amplifier with 2.5-4.0 dB noise figure

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Abstract

This paper presents an ultra-broadband low-noise amplifier (LNA) operating from 16 to 43 GHz in a 0.25 pm SiGe:C BiCMOS technology. Across this band, the LNA achieves simultaneous low-noise performance (2.5–4.0 dB) and power matching (S11 < −10 dB) using dual-LC tank matching. The measured minimal noise figure is 2.5 dB at 26 GHz with an average value of 3.25 (±0.75) dB from 16 to 44 GHz. The best gain is 10.5 dB at 26 GHz with a 3-dB gain bandwidth from 16 to 43 GHz (90% fractional bandwidth). The measured input 1-dB compression point and input IP3 are better than −8.5 dBm and 1.8 dBm over the 16–43 GHz band, respectively, for a total power consumption of 24 mW.
Original languageEnglish
Title of host publication2016 IEEE Asian Solid-State Circuits Conference (A-SSCC), November 7-9, 2016, Toyama, Japan
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages349-352
Number of pages4
ISBN (Electronic)978-1-5090-3700-1
ISBN (Print)978-1-5090-3699-8
DOIs
Publication statusPublished - 9 Nov 2016
Event12th IEEE Asian Solid-State Circuits Conference (A-SSCC 2016) - Toyama, Japan
Duration: 7 Nov 20169 Nov 2016
Conference number: 12
http://www.asscc.org/2016/

Conference

Conference12th IEEE Asian Solid-State Circuits Conference (A-SSCC 2016)
Abbreviated titleA-SSCC 2016
CountryJapan
CityToyama
Period7/11/169/11/16
Internet address

Keywords

  • LNA
  • ultra-broadband
  • dual-LC tank
  • SiGe

Cite this

Chen, Z., Gao, H., Leenaerts, D. M. W., Milosevic, D., & Baltus, P. G. M. (2016). A 16-43 GHz low-noise amplifier with 2.5-4.0 dB noise figure. In 2016 IEEE Asian Solid-State Circuits Conference (A-SSCC), November 7-9, 2016, Toyama, Japan (pp. 349-352). Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ASSCC.2016.7844207
Chen, Z. ; Gao, H. ; Leenaerts, D.M.W. ; Milosevic, D. ; Baltus, P.G.M. / A 16-43 GHz low-noise amplifier with 2.5-4.0 dB noise figure. 2016 IEEE Asian Solid-State Circuits Conference (A-SSCC), November 7-9, 2016, Toyama, Japan. Piscataway : Institute of Electrical and Electronics Engineers, 2016. pp. 349-352
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title = "A 16-43 GHz low-noise amplifier with 2.5-4.0 dB noise figure",
abstract = "This paper presents an ultra-broadband low-noise amplifier (LNA) operating from 16 to 43 GHz in a 0.25 pm SiGe:C BiCMOS technology. Across this band, the LNA achieves simultaneous low-noise performance (2.5–4.0 dB) and power matching (S11 < −10 dB) using dual-LC tank matching. The measured minimal noise figure is 2.5 dB at 26 GHz with an average value of 3.25 (±0.75) dB from 16 to 44 GHz. The best gain is 10.5 dB at 26 GHz with a 3-dB gain bandwidth from 16 to 43 GHz (90{\%} fractional bandwidth). The measured input 1-dB compression point and input IP3 are better than −8.5 dBm and 1.8 dBm over the 16–43 GHz band, respectively, for a total power consumption of 24 mW.",
keywords = "LNA, ultra-broadband, dual-LC tank, SiGe",
author = "Z. Chen and H. Gao and D.M.W. Leenaerts and D. Milosevic and P.G.M. Baltus",
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Chen, Z, Gao, H, Leenaerts, DMW, Milosevic, D & Baltus, PGM 2016, A 16-43 GHz low-noise amplifier with 2.5-4.0 dB noise figure. in 2016 IEEE Asian Solid-State Circuits Conference (A-SSCC), November 7-9, 2016, Toyama, Japan. Institute of Electrical and Electronics Engineers, Piscataway, pp. 349-352, 12th IEEE Asian Solid-State Circuits Conference (A-SSCC 2016), Toyama, Japan, 7/11/16. https://doi.org/10.1109/ASSCC.2016.7844207

A 16-43 GHz low-noise amplifier with 2.5-4.0 dB noise figure. / Chen, Z.; Gao, H.; Leenaerts, D.M.W.; Milosevic, D.; Baltus, P.G.M.

2016 IEEE Asian Solid-State Circuits Conference (A-SSCC), November 7-9, 2016, Toyama, Japan. Piscataway : Institute of Electrical and Electronics Engineers, 2016. p. 349-352.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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AU - Baltus, P.G.M.

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N2 - This paper presents an ultra-broadband low-noise amplifier (LNA) operating from 16 to 43 GHz in a 0.25 pm SiGe:C BiCMOS technology. Across this band, the LNA achieves simultaneous low-noise performance (2.5–4.0 dB) and power matching (S11 < −10 dB) using dual-LC tank matching. The measured minimal noise figure is 2.5 dB at 26 GHz with an average value of 3.25 (±0.75) dB from 16 to 44 GHz. The best gain is 10.5 dB at 26 GHz with a 3-dB gain bandwidth from 16 to 43 GHz (90% fractional bandwidth). The measured input 1-dB compression point and input IP3 are better than −8.5 dBm and 1.8 dBm over the 16–43 GHz band, respectively, for a total power consumption of 24 mW.

AB - This paper presents an ultra-broadband low-noise amplifier (LNA) operating from 16 to 43 GHz in a 0.25 pm SiGe:C BiCMOS technology. Across this band, the LNA achieves simultaneous low-noise performance (2.5–4.0 dB) and power matching (S11 < −10 dB) using dual-LC tank matching. The measured minimal noise figure is 2.5 dB at 26 GHz with an average value of 3.25 (±0.75) dB from 16 to 44 GHz. The best gain is 10.5 dB at 26 GHz with a 3-dB gain bandwidth from 16 to 43 GHz (90% fractional bandwidth). The measured input 1-dB compression point and input IP3 are better than −8.5 dBm and 1.8 dBm over the 16–43 GHz band, respectively, for a total power consumption of 24 mW.

KW - LNA

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KW - dual-LC tank

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M3 - Conference contribution

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Chen Z, Gao H, Leenaerts DMW, Milosevic D, Baltus PGM. A 16-43 GHz low-noise amplifier with 2.5-4.0 dB noise figure. In 2016 IEEE Asian Solid-State Circuits Conference (A-SSCC), November 7-9, 2016, Toyama, Japan. Piscataway: Institute of Electrical and Electronics Engineers. 2016. p. 349-352 https://doi.org/10.1109/ASSCC.2016.7844207