Abstract
This paper presents an ultra-broadband low-noise amplifier (LNA) operating from 16 to 43 GHz in a 0.25 pm SiGe:C BiCMOS technology. Across this band, the LNA achieves simultaneous low-noise performance (2.5–4.0 dB) and power matching (S11 < −10 dB) using dual-LC tank matching. The measured minimal noise figure is 2.5 dB at 26 GHz with an average value of 3.25 (±0.75) dB from 16 to 44 GHz. The best gain is 10.5 dB at 26 GHz with a 3-dB gain bandwidth from 16 to 43 GHz (90% fractional bandwidth). The measured input 1-dB compression point and input IP3 are better than −8.5 dBm and 1.8 dBm over the 16–43 GHz band, respectively, for a total power consumption of 24 mW.
Original language | English |
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Title of host publication | 2016 IEEE Asian Solid-State Circuits Conference (A-SSCC), November 7-9, 2016, Toyama, Japan |
Place of Publication | Piscataway |
Publisher | Institute of Electrical and Electronics Engineers |
Pages | 349-352 |
Number of pages | 4 |
ISBN (Electronic) | 978-1-5090-3700-1 |
ISBN (Print) | 978-1-5090-3699-8 |
DOIs | |
Publication status | Published - 9 Nov 2016 |
Event | 12th IEEE Asian Solid-State Circuits Conference, A-SSCC 2016 - Toyama, Japan Duration: 7 Nov 2016 → 9 Nov 2016 Conference number: 12 http://www.asscc.org/2016/ |
Conference
Conference | 12th IEEE Asian Solid-State Circuits Conference, A-SSCC 2016 |
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Abbreviated title | A-SSCC 2016 |
Country/Territory | Japan |
City | Toyama |
Period | 7/11/16 → 9/11/16 |
Internet address |
Keywords
- LNA
- ultra-broadband
- dual-LC tank
- SiGe