A 14b 2GS/s DAC with >87 dB SFDR in 0.18 μm BiCMOS Technology

Hongfei Hu, Qian Qi, Jian Xiao, Yufeng Guo, Hao Gao, Yi Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

This paper presents a 14b 2GS/s DAC in 0.18 μm BiCMOS. In order to improve the linearity and dynamic performance of the DAC, SiGe HBTs are adopted in this scheme as the DAC current sources, while the digital circuit is fabricated in CMOS technology for the purpose of reducing power consumption and saving chip area. A R-2R resistor ladder, a two-stage segmented decoding circuit and a special current cell is designed in this paper to overcome shortcomings of SiGe HBT in the DAC. The post simulation results show that the DAC achieves a SFDR of 87dB at Nyquist-rate.
Original languageEnglish
Title of host publication2021 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2021 - Proceedings
Subtitle of host publicationProceedings
PublisherInstitute of Electrical and Electronics Engineers
Number of pages3
ISBN (Electronic)978-1-6654-3437-9
DOIs
Publication statusPublished - 1 Dec 2021
EventInternational Conference on Microwave and Millimeter Wave Technology (ICMMT2021) - Nanjing, China
Duration: 23 May 202126 May 2021
http://www.em-conf.com/icmmt2021/

Conference

ConferenceInternational Conference on Microwave and Millimeter Wave Technology (ICMMT2021)
Country/TerritoryChina
CityNanjing
Period23/05/2126/05/21
Internet address

Bibliographical note

POSTER Session: MP4P

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