A 1.2V receiver front-end for multi-standard wireless applications in 65 nm CMOS LP

M. Vidojkovic, M.A.T. Sanduleanu, V. Vidojkovic, J. van der Tang, P. Baltus, A.H.M. Van Roermund

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)


A low-power low-voltage wide-band inductor-less multi-standard receiver RF front-end in a digital CMOS 65nm Low Power (LP) process is described. S11 less than -10 dB is measured in the frequency range from 10MHz up to 5GHz. The front-end featuring two gain modes, achieves a voltage gain of 29dB in the high voltage gain mode, and a voltage gain of 23dB in the low voltage gain mode. The 3dB bandwidth of the RF front-end is 2.5GHz. The measured NF at 1GHz is 5.5dB in the high gain mode and 7.7dB in the low gain mode. The front-end achieves an IIP3 of -13.5dBm and -7.5dBm in the high and the low gain mode, respectively. It consumes 13 mA from a 1.2V supply in both gain modes. The implemented front-end occupies a chip area of 670um x 860)um.

Original languageEnglish
Title of host publicationESSCIRC 2008 - Proceedings of the 34th European Solid-State Circuits Conference
PublisherInstitute of Electrical and Electronics Engineers
Number of pages4
ISBN (Electronic)978-1-4244-2362-0
ISBN (Print)978-1-4244-2361-3
Publication statusPublished - 2008
Event34th European Solid-State Circuits Conference (ESSCIRC 2008) - Edinburgh, Scotland, United Kingdom
Duration: 15 Sep 200819 Sep 2008
Conference number: 34


Conference34th European Solid-State Circuits Conference (ESSCIRC 2008)
Abbreviated titleESSCIRC 2008
Country/TerritoryUnited Kingdom
CityEdinburgh, Scotland


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