A 1.2V receiver front-end for multi-standard wireless applications in 65 nm CMOS LP

M. Vidojkovic; M.A.T. Sanduleanu; V. Vidojkovic; J. van der Tang; P. Baltus; A.H.M. Van Roermund

doi:10.1109/ESSCIRC.2008.4681880

A 1.2V receiver front-end for multi-standard wireless applications in 65 nm CMOS LP

M. Vidojkovic, M.A.T. Sanduleanu, V. Vidojkovic, J. van der Tang, P. Baltus, A.H.M. Van Roermund

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

Abstract

A low-power low-voltage wide-band inductor-less multi-standard receiver RF front-end in a digital CMOS 65nm Low Power (LP) process is described. S11 less than -10 dB is measured in the frequency range from 10MHz up to 5GHz. The front-end featuring two gain modes, achieves a voltage gain of 29dB in the high voltage gain mode, and a voltage gain of 23dB in the low voltage gain mode. The 3dB bandwidth of the RF front-end is 2.5GHz. The measured NF at 1GHz is 5.5dB in the high gain mode and 7.7dB in the low gain mode. The front-end achieves an IIP3 of -13.5dBm and -7.5dBm in the high and the low gain mode, respectively. It consumes 13 mA from a 1.2V supply in both gain modes. The implemented front-end occupies a chip area of 670um x 860)um.

Original language	English
Title of host publication	ESSCIRC 2008 - Proceedings of the 34th European Solid-State Circuits Conference
Publisher	Institute of Electrical and Electronics Engineers
Pages	414-417
Number of pages	4
ISBN (Electronic)	978-1-4244-2362-0
ISBN (Print)	978-1-4244-2361-3
DOIs	https://doi.org/10.1109/ESSCIRC.2008.4681880
Publication status	Published - 2008
Event	34th European Solid-State Circuits Conference, ESSCIRC 2008 - Edinburgh, Scotland, United Kingdom Duration: 15 Sept 2008 → 19 Sept 2008 Conference number: 34

Conference

Conference	34th European Solid-State Circuits Conference, ESSCIRC 2008
Abbreviated title	ESSCIRC 2008
Country/Territory	United Kingdom
City	Edinburgh, Scotland
Period	15/09/08 → 19/09/08

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10.1109/ESSCIRC.2008.4681880

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Vidojkovic, M., Sanduleanu, M. A. T., Vidojkovic, V., van der Tang, J., Baltus, P., & Van Roermund, A. H. M. (2008). A 1.2V receiver front-end for multi-standard wireless applications in 65 nm CMOS LP. In ESSCIRC 2008 - Proceedings of the 34th European Solid-State Circuits Conference (pp. 414-417). [4681880] Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ESSCIRC.2008.4681880

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title = "A 1.2V receiver front-end for multi-standard wireless applications in 65 nm CMOS LP",

abstract = "A low-power low-voltage wide-band inductor-less multi-standard receiver RF front-end in a digital CMOS 65nm Low Power (LP) process is described. S11 less than -10 dB is measured in the frequency range from 10MHz up to 5GHz. The front-end featuring two gain modes, achieves a voltage gain of 29dB in the high voltage gain mode, and a voltage gain of 23dB in the low voltage gain mode. The 3dB bandwidth of the RF front-end is 2.5GHz. The measured NF at 1GHz is 5.5dB in the high gain mode and 7.7dB in the low gain mode. The front-end achieves an IIP3 of -13.5dBm and -7.5dBm in the high and the low gain mode, respectively. It consumes 13 mA from a 1.2V supply in both gain modes. The implemented front-end occupies a chip area of 670um x 860)um.",

author = "M. Vidojkovic and M.A.T. Sanduleanu and V. Vidojkovic and {van der Tang}, J. and P. Baltus and {Van Roermund}, A.H.M.",

year = "2008",

doi = "10.1109/ESSCIRC.2008.4681880",

language = "English",

isbn = "978-1-4244-2361-3",

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booktitle = "ESSCIRC 2008 - Proceedings of the 34th European Solid-State Circuits Conference",

publisher = "Institute of Electrical and Electronics Engineers",

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note = "34th European Solid-State Circuits Conference, ESSCIRC 2008, ESSCIRC 2008 ; Conference date: 15-09-2008 Through 19-09-2008",

}

Vidojkovic, M, Sanduleanu, MAT, Vidojkovic, V, van der Tang, J, Baltus, P & Van Roermund, AHM 2008, A 1.2V receiver front-end for multi-standard wireless applications in 65 nm CMOS LP. in ESSCIRC 2008 - Proceedings of the 34th European Solid-State Circuits Conference., 4681880, Institute of Electrical and Electronics Engineers, pp. 414-417, 34th European Solid-State Circuits Conference, ESSCIRC 2008, Edinburgh, Scotland, United Kingdom, 15/09/08. https://doi.org/10.1109/ESSCIRC.2008.4681880

A 1.2V receiver front-end for multi-standard wireless applications in 65 nm CMOS LP. / Vidojkovic, M.; Sanduleanu, M.A.T.; Vidojkovic, V. et al.

ESSCIRC 2008 - Proceedings of the 34th European Solid-State Circuits Conference. Institute of Electrical and Electronics Engineers, 2008. p. 414-417 4681880.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Vidojkovic, M.

AU - Sanduleanu, M.A.T.

AU - Vidojkovic, V.

AU - van der Tang, J.

AU - Baltus, P.

AU - Van Roermund, A.H.M.

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PY - 2008

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N2 - A low-power low-voltage wide-band inductor-less multi-standard receiver RF front-end in a digital CMOS 65nm Low Power (LP) process is described. S11 less than -10 dB is measured in the frequency range from 10MHz up to 5GHz. The front-end featuring two gain modes, achieves a voltage gain of 29dB in the high voltage gain mode, and a voltage gain of 23dB in the low voltage gain mode. The 3dB bandwidth of the RF front-end is 2.5GHz. The measured NF at 1GHz is 5.5dB in the high gain mode and 7.7dB in the low gain mode. The front-end achieves an IIP3 of -13.5dBm and -7.5dBm in the high and the low gain mode, respectively. It consumes 13 mA from a 1.2V supply in both gain modes. The implemented front-end occupies a chip area of 670um x 860)um.

AB - A low-power low-voltage wide-band inductor-less multi-standard receiver RF front-end in a digital CMOS 65nm Low Power (LP) process is described. S11 less than -10 dB is measured in the frequency range from 10MHz up to 5GHz. The front-end featuring two gain modes, achieves a voltage gain of 29dB in the high voltage gain mode, and a voltage gain of 23dB in the low voltage gain mode. The 3dB bandwidth of the RF front-end is 2.5GHz. The measured NF at 1GHz is 5.5dB in the high gain mode and 7.7dB in the low gain mode. The front-end achieves an IIP3 of -13.5dBm and -7.5dBm in the high and the low gain mode, respectively. It consumes 13 mA from a 1.2V supply in both gain modes. The implemented front-end occupies a chip area of 670um x 860)um.

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M3 - Conference contribution

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BT - ESSCIRC 2008 - Proceedings of the 34th European Solid-State Circuits Conference

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Y2 - 15 September 2008 through 19 September 2008

ER -

A 1.2V receiver front-end for multi-standard wireless applications in 65 nm CMOS LP

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